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IXTA2R4N120P PDF预览

IXTA2R4N120P

更新时间: 2024-10-28 12:04:03
品牌 Logo 应用领域
IXYS /
页数 文件大小 规格书
4页 157K
描述
N-Channel Enhancement Mode Avalanche Rated

IXTA2R4N120P 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Transferred零件包装代码:D2PAK
包装说明:TO-263, 3 PIN针数:4
Reach Compliance Code:not_compliant风险等级:5.69
其他特性:AVALANCHE RATED雪崩能效等级(Eas):200 mJ
外壳连接:DRAIN配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:1200 V最大漏极电流 (Abs) (ID):2.4 A
最大漏极电流 (ID):2.4 A最大漏源导通电阻:7.5 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJEDEC-95代码:TO-263AB
JESD-30 代码:R-PSSO-G2JESD-609代码:e3
湿度敏感等级:2元件数量:1
端子数量:2工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):125 W最大脉冲漏极电流 (IDM):6 A
认证状态:Not Qualified子类别:FET General Purpose Power
表面贴装:YES端子面层:Matte Tin (Sn)
端子形式:GULL WING端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

IXTA2R4N120P 数据手册

 浏览型号IXTA2R4N120P的Datasheet PDF文件第2页浏览型号IXTA2R4N120P的Datasheet PDF文件第3页浏览型号IXTA2R4N120P的Datasheet PDF文件第4页 
Polar TM  
Power MOSFET  
IXTA2R4N120P  
IXTH2R4N120P  
IXTP2R4N120P  
VDSS = 1200V  
ID25 = 2.4A  
RDS(on) 7.5Ω  
N-Channel Enhancement Mode  
Avalanche Rated  
TO-263 (IXTA)  
G
S
(TAB)  
TO-220 (IXTP)  
Symbol  
Test Conditions  
Maximum Ratings  
VDSS  
VDGR  
TJ = 25°C to 150°C  
1200  
1200  
V
V
TJ = 25°C to 150°C, RGS = 1MΩ  
VGSS  
VGSM  
Continuous  
Transient  
±20  
±30  
V
V
(TAB)  
G
D
S
ID25  
IDM  
TC = 25°C  
TC = 25°C, pulse width limited by TJM  
2.4  
6
A
A
TO-247 (IXTH)  
IA  
EAS  
TC = 25°C  
TC = 25°C  
2.4  
200  
A
mJ  
dV/dt  
PD  
IS IDM, VDD VDSS, TJ 150°C  
TC = 25°C  
10  
V/ns  
W
G
125  
(TAB)  
D
S
TJ  
TJM  
Tstg  
-55 ... +150  
150  
-55 ... +150  
°C  
°C  
°C  
G = Gate  
S = Source  
D = Drain  
TAB = Drain  
TL  
TSOLD  
1.6mm (0.062) from case for 10s  
Plastic body for 10s  
300  
260  
°C  
°C  
Features  
z International standard packages  
z Unclamped Inductive Switching  
(UIS) rated  
z Low package inductance  
- easy to drive and to protect  
Md  
Mounting torque  
(TO-220, TO-247)  
1.13 / 10  
Nm/lb.in.  
Weight  
TO-263  
TO-220  
TO-247  
2.5  
3.0  
6.0  
g
g
g
Advantages  
z
Symbol  
Test Conditions  
Characteristic Values  
Easy to mount  
Space savings  
High power density  
z
(TJ = 25°C, unless otherwise specified)  
Min. Typ.  
Max.  
z
BVDSS  
VGS(th)  
IGSS  
VGS = 0V, ID = 250μA  
VDS = VGS, ID = 250μA  
VGS = ±20V, VDS = 0V  
1200  
V
V
2.5  
4.5  
Applications:  
±50 nA  
μA  
z High Voltage Switched-mode and  
resonant-mode power supplies  
z High Voltage Pulse Power Applications  
z High Voltage Discharge circuits in  
Lasers Pulsers, Spark Igniters, RF  
Generators  
IDSS  
VDS = VDSS  
VGS = 0V  
5
TJ = 125°C  
300 μA  
RDS(on)  
VGS = 10V, ID = 0.5 ID25, Note 1  
6.5  
7.5 Ω  
z High Voltage DC-DC converters  
z High Voltage DC-AC inverters  
DS99873A (04/08)  
© 2008 IXYS CORPORATION, All rights reserved  

IXTA2R4N120P 替代型号

型号 品牌 替代类型 描述 数据表
IXTH2R4N120P IXYS

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