5秒后页面跳转
IXTA2N100P PDF预览

IXTA2N100P

更新时间: 2024-10-28 21:17:59
品牌 Logo 应用领域
IXYS 局域网开关脉冲晶体管
页数 文件大小 规格书
5页 259K
描述
Power Field-Effect Transistor, 2A I(D), 1000V, 7.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3 PIN

IXTA2N100P 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Transferred零件包装代码:D2PAK
包装说明:TO-263, 3 PIN针数:4
Reach Compliance Code:not_compliant风险等级:8.49
其他特性:AVALANCHE RATED雪崩能效等级(Eas):150 mJ
外壳连接:DRAIN配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:1000 V最大漏极电流 (Abs) (ID):2 A
最大漏极电流 (ID):2 A最大漏源导通电阻:7.5 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJEDEC-95代码:TO-263AB
JESD-30 代码:R-PSSO-G2JESD-609代码:e3
湿度敏感等级:2元件数量:1
端子数量:2工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):86 W最大脉冲漏极电流 (IDM):5 A
认证状态:Not Qualified子类别:FET General Purpose Power
表面贴装:YES端子面层:Matte Tin (Sn)
端子形式:GULL WING端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

IXTA2N100P 数据手册

 浏览型号IXTA2N100P的Datasheet PDF文件第2页浏览型号IXTA2N100P的Datasheet PDF文件第3页浏览型号IXTA2N100P的Datasheet PDF文件第4页浏览型号IXTA2N100P的Datasheet PDF文件第5页 
PolarTM  
Power MOSFET  
IXTY2N100P  
IXTA2N100P  
IXTP2N100P  
VDSS = 1000V  
ID25 = 2A  
RDS(on) 7.5  
N-Channel Enhancement Mode  
Avalanche Rated  
TO-252 (IXTY)  
G
S
D (Tab)  
TO-263 (IXTA)  
Symbol  
VDSS  
Test Conditions  
Maximum Ratings  
TJ = 25C to 150C  
1000  
1000  
V
V
G
S
VDGR  
TJ = 25C to 150C, RGS = 1M  
VGSS  
VGSM  
Continuous  
Transient  
20  
30  
V
V
D (Tab)  
TO-220 (IXTP)  
ID25  
IDM  
TC = 25C  
2
5
A
A
TC = 25C, Pulse Width Limited by TJM  
IA  
TC = 25C  
TC = 25C  
2
A
G
D
D (Tab)  
EAS  
150  
mJ  
S
dv/dt  
PD  
IS IDM, VDD VDSS, TJ 150°C  
TC = 25C  
10  
86  
V/ns  
W
G = Gate  
S = Source  
D
= Drain  
Tab = Drain  
TJ  
-55 ... +150  
150  
C  
C  
C  
TJM  
Tstg  
-55 ... +150  
Features  
TL  
TSOLD  
Maximum Lead Temperature for Soldering  
1.6 mm (0.062in.) from Case for 10s  
300  
260  
°C  
°C  
International Standard Packages  
Low QG  
Avalanche Rated  
Low Package Inductance  
Fast Intrinsic Rectifier  
FC  
Md  
Mounting Force (TO-263)  
Mounting Torque (TO-220)  
10..65 / 2.2..14.6  
1.13 / 10  
N/lb  
Nm/lb.in  
Weight  
TO-252  
TO-263  
TO-220  
0.35  
2.50  
3.00  
g
g
g
Advantages  
High Power Density  
Easy to Mount  
Space Savings  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25C, Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
Applications  
BVDSS  
VGS(th)  
IGSS  
VGS = 0V, ID = 250μA  
VDS = VGS, ID = 100μA  
VGS = 20V, VDS = 0V  
VDS = VDSS, VGS = 0V  
1000  
V
V
2.5  
4.5  
DC-DC Converters  
Switch-Mode and Resonant-Mode  
50 nA  
A  
Power Supplies  
AC and DC Motor Drives  
IDSS  
5
Lasers Drivers  
TJ = 125C  
250 A  
  
Robotics and Servo Controls  
RDS(on)  
VGS = 10V, ID = 0.5 ID25, Note 1  
6.0  
7.5   
DS99817C(8/17)  
© 2017 IXYS CORPORATION, All Rights Reserved  

IXTA2N100P 替代型号

型号 品牌 替代类型 描述 数据表
IXTY2N100P IXYS

功能相似

Power Field-Effect Transistor, 2A I(D), 1000V, 7.5ohm, 1-Element, N-Channel, Silicon, Meta

与IXTA2N100P相关器件

型号 品牌 获取价格 描述 数据表
IXTA2N100P-TRL LITTELFUSE

获取价格

Power Field-Effect Transistor,
IXTA2N80 IXYS

获取价格

High Voltage MOSFET
IXTA2N80 LITTELFUSE

获取价格

高压系列N通道标准MOSFET适用于多种多样的电源开关系统,包括高压电源、电容放电电路、脉
IXTA2R4N120P IXYS

获取价格

N-Channel Enhancement Mode Avalanche Rated
IXTA2R4N120P LITTELFUSE

获取价格

Polar?标准功率MOSFET经过专门定制,可为设计人员提供在性能和成本之间取得最佳平衡
IXTA300N04T2 LITTELFUSE

获取价格

这些器件具有40V至170V的漏极 - 源极电压额定值,并可提供高达600安培的高电流性能
IXTA300N04T2-7 IXYS

获取价格

Power Field-Effect Transistor, 300A I(D), 40V, 0.0025ohm, 1-Element, N-Channel, Silicon, M
IXTA300N04T2-7 LITTELFUSE

获取价格

这些器件具有40V至170V的漏极 - 源极电压额定值,并可提供高达600安培的高电流性能
IXTA30N25L2 LITTELFUSE

获取价格

Power Field-Effect Transistor,
IXTA32N20T IXYS

获取价格

TrenchTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated