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IXTQ36P15P PDF预览

IXTQ36P15P

更新时间: 2024-01-25 20:20:12
品牌 Logo 应用领域
力特 - LITTELFUSE /
页数 文件大小 规格书
7页 176K
描述
Power Field-Effect Transistor,

IXTQ36P15P 技术参数

生命周期:Active包装说明:,
Reach Compliance Code:unknown风险等级:5.75
Is Samacsys:NBase Number Matches:1

IXTQ36P15P 数据手册

 浏览型号IXTQ36P15P的Datasheet PDF文件第2页浏览型号IXTQ36P15P的Datasheet PDF文件第3页浏览型号IXTQ36P15P的Datasheet PDF文件第4页浏览型号IXTQ36P15P的Datasheet PDF文件第5页浏览型号IXTQ36P15P的Datasheet PDF文件第6页浏览型号IXTQ36P15P的Datasheet PDF文件第7页 
PolarPTM  
Power MOSFETs  
IXTA36P15P  
IXTP36P15P  
IXTQ36P15P  
IXTH36P15P  
VDSS = - 150V  
ID25  
= - 36A  
RDS(on)  
110mΩ  
P-Channel Enhancement Mode  
Avalanche Rated  
TO-263 AA (IXTA)  
TO-220AB (IXTP)  
TO-3P (IXTQ)  
G
S
G
D
S
G
D
D (Tab)  
S
D (Tab)  
D (Tab)  
TO-247 (IXTH)  
Symbol  
VDSS  
Test Conditions  
Maximum Ratings  
TJ = 25°C to 150°C  
TJ = 25°C to 150°C, RGS = 1MΩ  
- 150  
- 150  
V
V
VDGR  
VGSS  
VGSM  
Continuous  
Transient  
±20  
±30  
V
V
G
D
S
D (Tab)  
D = Drain  
ID25  
IDM  
TC = 25°C  
TC = 25°C, Pulse Width Limited by TJM  
- 36  
- 90  
A
A
G = Gate  
S = Source  
Tab = Drain  
IA  
TC = 25°C  
TC = 25°C  
- 36  
1.5  
A
J
EAS  
dv/dt  
PD  
IS IDM, VDD VDSS, TJ 150°C  
TC = 25°C  
10  
V/ns  
W
Features  
300  
z International Standard Packages  
z Rugged PolarPTM Process  
z Avalanche Rated  
TJ  
TJM  
Tstg  
-55 ... +150  
150  
-55 ... +150  
°C  
°C  
°C  
z Low Package Inductance  
z Fast Intrinsic Diode  
TL  
TSOLD  
1.6mm (0.062 in.) from Case for 10s  
Plastic Body for 10s  
300  
260  
°C  
°C  
z Dynamic dv/dt Rated  
Md  
Mounting Torque (TO-3P,TO-220 & TO-247)  
1.13/10  
Nm/lb.in.  
N/lb.  
z
Low RDS(ON) and QG  
FC  
Mounting Force (TO-263)  
10..65/2.2..14.6  
z Low Drain-to-Tab Capacitance  
Weight  
TO-263  
TO-220  
TO-3P  
2.5  
3.0  
5.5  
6.0  
g
g
g
g
Advantages  
TO-247  
z
Easy to Mount  
Space Savings  
High Power Density  
z
z
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25°C, Unless Otherwise Specified)  
Min.  
- 150  
- 2.5  
Typ.  
Max.  
Applications  
BVDSS  
VGS(th)  
IGSS  
VGS = 0V, ID = - 250 μA  
VDS = VGS, ID = - 250μA  
VGS = ±20V, VDS = 0V  
VDS = VDSS, VGS = 0V  
V
V
z
High-Side Switching  
Push Pull Amplifiers  
DC Choppers  
Automatic Test Equipment  
- 4.5  
z
±100 nA  
z
z
IDSS  
-10 μA  
- 250 μA  
z
TJ = 125°C  
Current Regulators  
RDS(on)  
VGS = -10V, ID = 0.5 • ID25, Note 1  
110 mΩ  
© 2013 IXYS CORPORATION, All Rights Reserved  
DS99791D(01/13)  

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