IXTQ30N50L2

更新时间： 2024-02-23 10:49:56

品牌	Logo	应用领域
IXYS		晶体晶体管功率场效应晶体管开关脉冲局域网
页数	文件大小	规格书
5页	147K
描述
Linear L2TM Power MOSFET with extended FBSOA N-Channel Enhancement Mode

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技术参数
数据手册

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IXTQ30N50L2 技术参数

生命周期：	Active	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.68
Is Samacsys：	N	Base Number Matches：	1

IXTQ30N50L2 数据手册

Linear L2^TMPower

MOSFET with extended

FBSOA

N-Channel Enhancement Mode

IXTH30N50L2

IXTQ30N50L2

V_DSS= 500V

I_D25= 30A

R_DS(on)≤ 200mΩ

IXTT30N50L2

_OD

TO-247 (IXTH)

R_Gi

(TAB)

Symbol

V_DSS

Test Conditions

Maximum Ratings

T_J= 25°C to 150°C

T_J= 25°C to 150°C, R_GS= 1MΩ

500

TO-3P (IXTQ)

V_DGR

V_GSS

V_GSM

Continuous

Transient

±20

±30

I_D25

I_DM

I_AR

T_C= 25°C

T_C= 25°C, pulse width limited by T_JM

T_C= 25°C

(TAB)

E_AR

E_AS

T_C= 25°C

TO-268 (IXTT)

1.5

P_D

T_C= 25°C

400

T_J

-55 to +150

°C

(TAB)

T_JM

T_stg

+150

-55 to +150

T_L

1.6mm (0.063in) from case for 10s

Plastic body for 10s

300

260

°C

G = Gate

S = Source TAB = Drain

= Drain

T_SOLD

M_d

Mounting torque (TO-247, TO-3P)

1.13/10

Nm/lb.in.

Weight

TO-247

TO-3P

TO-268

6.0

5.5

5.0

Features

^zDesigned for linear operation

^zInternational standard packages

^zUnclamped Inductive Switching

(UIS) rated.

Symbol

Test Conditions

Characteristic Values

^zMolding epoxies meet UL 94 V-0

flammability classification

^zIntegrated gate resistor for easy

paralleling

(T_J= 25°C, unless otherwise specified)

Min.

Typ.

Max.

BV_DSS

V_GS(th)

V_GS= 0V, I_D= 250μA

V_DS= V_GS, I_D= 250μA

500

2.5

^zGuaranteed FBSOA at 75°C

4.5

I_GSS

I_DSS

V_GS= ±30V, V_DS= 0V

±100 nA

Applications

V_DS= V_DSS

V_GS= 0V

50 μA

300 μA

^zSolid state circuit breakers

^zSoft start controls

^zLinear amplifiers

^zProgrammable loads

^zCurrent regulators

T_J= 125°C

R_DS(on)

V_GS= 10V, I_D= 0.5 • I_D25, Note 1

200 mΩ

DS99957A (04/08)

12 3 4 5

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