Datasheet > IXTQ23N60Q

IXTQ23N60Q

更新时间： 2024-11-18 03:13:39

品牌	Logo	应用领域
IXYS		/
页数	文件大小	规格书
4页	534K
描述
Power MOSFETs Q-Class

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

IXTQ23N60Q 数据手册

IXTQ 23N60Q

V_DSS

I_D25

= 600 V

23 A

Power MOSFETs

Q-Class

R_DS(on)= 0.32 Ω

N-ChannelEnhancementMode

Avalanche Rated, High dv/dt,

Low Gate Charge and Capacitances

Preliminary Data Sheet

Symbol

TestConditions

Maximum Ratings

TO-3P(IXTQ)

V_DSS

V_DGR

= 25°C to 150°C

600

T^J_J= 25°C to 150°C; R_GS= 1 MΩ

V_GS

V_GSM

Continuous

Transient

I_D25

I_DM

I_AR

T_C= 25°C

T_C= 25°C, pulse width limited by T_JM

T_C= 25°C

(TAB)

E_AR

E_AS

T_C= 25°C

G = Gate

S = Source

D = Drain

TAB = Drain

1.5

dv/dt

I_S≤ I_DM, di/dt ≤ 100 A/µs, V_DD≤ V_DSS

T_J≤ 150°C, R_G= 2 Ω

V/ns

Features

P_D

T_C= 25°C

400

T_J

T_JM

T_stg

-55 ... +150

150

°C

IXYS advanced low gate charge

process

International standard package

Low gate charge and capacitance

- easier to drive

- faster switching

Low R_{DS (on)}

Unclamped Inductive Switching (UIS)

rated

Molding epoxies meet UL 94 V-0

flammability classification

-55 ... +150

T_L

1.6 mm (0.062 in.) from case for 10 s

Mounting torque

300

°C

M_d

1.13/10 Nm/lb.in.

Weight

Symbol

TestConditions

Characteristic Values

(T_J= 25°C, unless otherwise specified)

Min. Typ.

Max.

Advantages

V_DSS

V_GS(th)

I_GSS

V_GS= 0 V, I_D= 250 µA

V_DS= V_GS, I_D= 250 µA

V_GS= 30 V_DC, V_DS= 0

600

2.5

4.5

Easy to mount

Space savings

100 nA

High power density

I_DSS

V_DS= V_DSS

V_GS= 0 V

T_J= 25°C

T_J= 125°C

25 µA

R_DS(on)

V_GS= 10 V, I_D= 0.5 I_D25

0.32

Ω

Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %

DS99080(08/03)

12 3 4

中文翻译

下载PDF

与IXTQ23N60Q相关器件

型号	品牌	获取价格	描述	数据表
IXTQ240N055T	IXYS	获取价格	TrenchMV Power MOSFET
IXTQ24N55Q	IXYS	获取价格	Power Field-Effect Transistor, 24A I(D), 550V, 0.27ohm, 1-Element, N-Channel, Silicon, Met
IXTQ24N55Q	LITTELFUSE	获取价格	Power Field-Effect Transistor, 24A I(D), 550V, 0.27ohm, 1-Element, N-Channel, Silicon, Met
IXTQ250N075T	IXYS	获取价格	TrenchMV Power MOSFET
IXTQ26N50P	IXYS	获取价格	PolarHVTM Power MOSFET
IXTQ26N50P	LITTELFUSE	获取价格	Polar?标准功率MOSFET经过专门定制，可为设计人员提供在性能和成本之间取得最佳平衡
IXTQ26N60P	IXYS	获取价格	Power Field-Effect Transistor, 26A I(D), 600V, 0.27ohm, 1-Element, N-Channel, Silicon, Met
IXTQ26N60P	LITTELFUSE	获取价格	Power Field-Effect Transistor, 26A I(D), 600V, 0.27ohm, 1-Element, N-Channel, Silicon, Met
IXTQ26P20P	IXYS	获取价格	P-Channel Enhancement Mode Avalanche Rated
IXTQ26P20P	LITTELFUSE	获取价格	Polar? P通道MOSFET采用我们的Polar技术平台制造，相比传统产品将通态电阻(