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IXTQ24N55Q PDF预览

IXTQ24N55Q

更新时间: 2024-11-05 20:08:03
品牌 Logo 应用领域
IXYS 局域网开关脉冲晶体管
页数 文件大小 规格书
2页 507K
描述
Power Field-Effect Transistor, 24A I(D), 550V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, TO-3P, 3 PIN

IXTQ24N55Q 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Transferred零件包装代码:TO-3P
包装说明:PLASTIC, TO-3P, 3 PIN针数:3
Reach Compliance Code:compliant风险等级:5.76
雪崩能效等级(Eas):1500 mJ外壳连接:DRAIN
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:550 V
最大漏极电流 (ID):24 A最大漏源导通电阻:0.27 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJESD-30 代码:R-PSFM-T3
JESD-609代码:e3元件数量:1
端子数量:3工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
最大脉冲漏极电流 (IDM):96 A认证状态:Not Qualified
表面贴装:NO端子面层:Matte Tin (Sn)
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

IXTQ24N55Q 数据手册

 浏览型号IXTQ24N55Q的Datasheet PDF文件第2页 
Advanced Technical Information  
IXTQ 24N55Q  
VDSS  
ID25  
= 550 V  
= 24 A  
Power MOSFETs  
Q-Class  
RDS(on) = 0.27 Ω  
N-ChannelEnhancementMode  
Avalanche Rated, Low Qg, High dv/dt  
Symbol  
TestConditions  
Maximum Ratings  
TO-3P(IXTQ)  
VDSS  
VDGR  
TJ = 25°C to 150°C  
TJ = 25°C to 150°C; RGS = 1 MΩ  
550  
550  
V
V
VGS  
VGSM  
Continuous  
Transient  
30  
40  
V
V
G
ID25  
IDM  
IAR  
TC = 25°C  
TC = 25°C, pulse width limited by TJM  
TC = 25°C  
24  
96  
24  
A
A
A
D
S
(TAB)  
EAR  
EAS  
TC = 25°C  
30  
mJ  
J
G = Gate  
D
= Drain  
S = Source TAB = Drain  
1.5  
dv/dt  
IS IDM, di/dt 100 A/µs, VDD VDSS  
TJ 150°C, RG = 2 Ω  
,
10  
V/ns  
Features  
PD  
TC = 25°C  
400  
W
z IXYS advanced low Qg process  
z Low gate charge and capacitances  
- easier to drive  
TJ  
TJM  
Tstg  
-55 to +150  
150  
-55 to +150  
°C  
°C  
°C  
- faster switching  
z International standard packages  
z Low RDS (on)  
TL  
1.6 mm (0.063 in) from case for 10 s  
Mounting torque  
300  
°C  
z Rated for unclamped Inductive load  
switching (UIS) rated  
Md  
1.13/10 Nm/lb.in.  
Weight  
6
g
z Molding epoxies meet UL 94 V-0  
flammability classification  
Advantages  
Symbol  
TestConditions  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
z
Easy to mount  
Space savings  
min.  
typ.  
max.  
z
VDSS  
VGS(th)  
VGS = 0 V, ID = 250 µA  
VDS = VGS, ID = 250 µA  
550  
2.5  
V
V
z
High power density  
4.5  
IGSS  
IDSS  
VGS = 30 VDC, VDS = 0  
100  
nA  
VDS = V  
T
= 25°C  
25  
1
µA  
VGS = 0DVSS  
TJJ = 125°C  
mA  
RDS(on)  
V
= 10 V, ID = 0.5 ID25  
0.27  
PGuSlse test, t 300 µs, duty cycle d 2 %  
DS99079(08/03)  
© 2003 IXYS All rights reserved  

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