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IXTQ26P20P PDF预览

IXTQ26P20P

更新时间: 2024-11-06 14:56:43
品牌 Logo 应用领域
力特 - LITTELFUSE 开关栅极
页数 文件大小 规格书
7页 184K
描述
Polar? P通道MOSFET采用我们的Polar技术平台制造,相比传统产品将通态电阻(RDSon)显著降低30%,并将栅极电荷(Qg)降低40%,从而降低了传导损失,并能提供出色的开关性能。

IXTQ26P20P 技术参数

生命周期:Active包装说明:,
Reach Compliance Code:unknown风险等级:5.74
Is Samacsys:NBase Number Matches:1

IXTQ26P20P 数据手册

 浏览型号IXTQ26P20P的Datasheet PDF文件第2页浏览型号IXTQ26P20P的Datasheet PDF文件第3页浏览型号IXTQ26P20P的Datasheet PDF文件第4页浏览型号IXTQ26P20P的Datasheet PDF文件第5页浏览型号IXTQ26P20P的Datasheet PDF文件第6页浏览型号IXTQ26P20P的Datasheet PDF文件第7页 
PolarPTM  
Power MOSFETs  
IXTA26P20P  
IXTP26P20P  
IXTQ26P20P  
IXTH26P20P  
VDSS = - 200V  
ID25 = - 26A  
RDS(on)  
170mΩ  
P-Channel Enhancement Mode  
Avalanche Rated  
TO-263 AA (IXTA)  
TO-220AB (IXTP)  
TO-3P (IXTQ)  
G
S
G
D
S
G
D
D (Tab)  
S
D (Tab)  
D (Tab)  
Symbol  
VDSS  
Test Conditions  
Maximum Ratings  
TO-247 (IXTH)  
TJ = 25°C to 150°C  
TJ = 25°C to 150°C, RGS = 1MΩ  
- 200  
- 200  
V
V
VDGR  
VGSS  
VGSM  
Continuous  
Transient  
±20  
±30  
V
V
G
D
S
D (Tab)  
D = Drain  
ID25  
IDM  
TC = 25°C  
TC = 25°C, Pulse Width Limited by TJM  
- 26  
- 70  
A
A
G = Gate  
IA  
TC = 25°C  
TC = 25°C  
- 26  
1.5  
A
J
S = Source  
Tab = Drain  
EAS  
dv/dt  
PD  
IS IDM, VDD VDSS, TJ 150°C  
TC = 25°C  
10  
V/ns  
W
Features  
300  
z International Standard Packages  
z Avalanche Rated  
z Rugged PolarPTM Process  
z Low Package Inductance  
z Fast Intrinsic Diode  
TJ  
TJM  
Tstg  
- 55 ... +150  
150  
- 55 ... +150  
°C  
°C  
°C  
TL  
TSOLD  
1.6mm (0.062 in.) from Case for 10s  
Plastic Body for 10s  
300  
260  
°C  
°C  
Md  
Mounting Torque (TO-3P,TO-220 &TO-247)  
1.13/10  
Nm/lb.in.  
Advantages  
Weight  
TO-263  
TO-220  
TO-3P  
2.5  
3.0  
5.5  
6.0  
g
g
g
g
z
Easy to Mount  
Space Savings  
z
TO-247  
z
High Power Density  
Applications  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25°C, Unless Otherwise Specified)  
Min.  
- 200  
- 2.0  
Typ.  
Max.  
z
High-Side Switches  
Push Pull Amplifiers  
DC Choppers  
Automatic Test Equipment  
BVDSS  
VGS(th)  
IGSS  
VGS = 0V, ID = - 250μA  
VDS = VGS, ID = - 250μA  
VGS = ±20V, VDS = 0V  
VDS = VDSS, VGS= 0V  
V
V
z
z
- 4.0  
z
±100 nA  
z
Current Regulators  
IDSS  
- 10 μA  
-150 μA  
TJ = 125°C  
RDS(on)  
VGS = -10V, ID = 0.5 • ID25, Note 1  
170 mΩ  
DS99913D(01/13)  
© 2013 IXYS CORPORATION, All Rights Reserved  

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