5秒后页面跳转
IXTQ26P20P PDF预览

IXTQ26P20P

更新时间: 2024-11-19 14:56:43
品牌 Logo 应用领域
力特 - LITTELFUSE 开关栅极
页数 文件大小 规格书
7页 184K
描述
Polar? P通道MOSFET采用我们的Polar技术平台制造,相比传统产品将通态电阻(RDSon)显著降低30%,并将栅极电荷(Qg)降低40%,从而降低了传导损失,并能提供出色的开关性能。

IXTQ26P20P 技术参数

生命周期:Active包装说明:,
Reach Compliance Code:unknown风险等级:5.74
Is Samacsys:NBase Number Matches:1

IXTQ26P20P 数据手册

 浏览型号IXTQ26P20P的Datasheet PDF文件第2页浏览型号IXTQ26P20P的Datasheet PDF文件第3页浏览型号IXTQ26P20P的Datasheet PDF文件第4页浏览型号IXTQ26P20P的Datasheet PDF文件第5页浏览型号IXTQ26P20P的Datasheet PDF文件第6页浏览型号IXTQ26P20P的Datasheet PDF文件第7页 
PolarPTM  
Power MOSFETs  
IXTA26P20P  
IXTP26P20P  
IXTQ26P20P  
IXTH26P20P  
VDSS = - 200V  
ID25 = - 26A  
RDS(on)  
170mΩ  
P-Channel Enhancement Mode  
Avalanche Rated  
TO-263 AA (IXTA)  
TO-220AB (IXTP)  
TO-3P (IXTQ)  
G
S
G
D
S
G
D
D (Tab)  
S
D (Tab)  
D (Tab)  
Symbol  
VDSS  
Test Conditions  
Maximum Ratings  
TO-247 (IXTH)  
TJ = 25°C to 150°C  
TJ = 25°C to 150°C, RGS = 1MΩ  
- 200  
- 200  
V
V
VDGR  
VGSS  
VGSM  
Continuous  
Transient  
±20  
±30  
V
V
G
D
S
D (Tab)  
D = Drain  
ID25  
IDM  
TC = 25°C  
TC = 25°C, Pulse Width Limited by TJM  
- 26  
- 70  
A
A
G = Gate  
IA  
TC = 25°C  
TC = 25°C  
- 26  
1.5  
A
J
S = Source  
Tab = Drain  
EAS  
dv/dt  
PD  
IS IDM, VDD VDSS, TJ 150°C  
TC = 25°C  
10  
V/ns  
W
Features  
300  
z International Standard Packages  
z Avalanche Rated  
z Rugged PolarPTM Process  
z Low Package Inductance  
z Fast Intrinsic Diode  
TJ  
TJM  
Tstg  
- 55 ... +150  
150  
- 55 ... +150  
°C  
°C  
°C  
TL  
TSOLD  
1.6mm (0.062 in.) from Case for 10s  
Plastic Body for 10s  
300  
260  
°C  
°C  
Md  
Mounting Torque (TO-3P,TO-220 &TO-247)  
1.13/10  
Nm/lb.in.  
Advantages  
Weight  
TO-263  
TO-220  
TO-3P  
2.5  
3.0  
5.5  
6.0  
g
g
g
g
z
Easy to Mount  
Space Savings  
z
TO-247  
z
High Power Density  
Applications  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25°C, Unless Otherwise Specified)  
Min.  
- 200  
- 2.0  
Typ.  
Max.  
z
High-Side Switches  
Push Pull Amplifiers  
DC Choppers  
Automatic Test Equipment  
BVDSS  
VGS(th)  
IGSS  
VGS = 0V, ID = - 250μA  
VDS = VGS, ID = - 250μA  
VGS = ±20V, VDS = 0V  
VDS = VDSS, VGS= 0V  
V
V
z
z
- 4.0  
z
±100 nA  
z
Current Regulators  
IDSS  
- 10 μA  
-150 μA  
TJ = 125°C  
RDS(on)  
VGS = -10V, ID = 0.5 • ID25, Note 1  
170 mΩ  
DS99913D(01/13)  
© 2013 IXYS CORPORATION, All Rights Reserved  

与IXTQ26P20P相关器件

型号 品牌 获取价格 描述 数据表
IXTQ30N50L LITTELFUSE

获取价格

当功率MOSFET用于线性模式工作时,相对于传统的开关模式具有相当高的热应力和电应力,这是
IXTQ30N50L2 IXYS

获取价格

Linear L2TM Power MOSFET with extended FBSOA N-Channel Enhancement Mode
IXTQ30N50L2 LITTELFUSE

获取价格

这些独特的器件专为需要功率MOSFET以在电流饱和区工作的应用,具有低热阻、高功率密度和正
IXTQ30N50P LITTELFUSE

获取价格

Polar?标准功率MOSFET经过专门定制,可为设计人员提供在性能和成本之间取得最佳平衡
IXTQ30N60L2 IXYS

获取价格

Linear L2 Power MOSFET with extended FBSOA
IXTQ30N60L2 LITTELFUSE

获取价格

这些独特的器件专为需要功率MOSFET以在电流饱和区工作的应用,具有低热阻、高功率密度和正
IXTQ30N60P IXYS

获取价格

PolarHVTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated
IXTQ30N60P LITTELFUSE

获取价格

Polar?标准功率MOSFET经过专门定制,可为设计人员提供在性能和成本之间取得最佳平衡
IXTQ32N65X IXYS

获取价格

Power Field-Effect Transistor,
IXTQ32N65X LITTELFUSE

获取价格

采用快速体二极管的超级结X-Class功率MOSFET是坚固耐用的器件,具有业内最低的导通