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IXTQ250N075T PDF预览

IXTQ250N075T

更新时间: 2024-11-05 12:35:35
品牌 Logo 应用领域
IXYS 晶体晶体管功率场效应晶体管开关脉冲局域网
页数 文件大小 规格书
5页 209K
描述
TrenchMV Power MOSFET

IXTQ250N075T 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete零件包装代码:TO-3P
包装说明:FLANGE MOUNT, R-PSFM-T3针数:3
Reach Compliance Code:compliantECCN代码:EAR99
风险等级:5.84Is Samacsys:N
其他特性:AVALANCHE RATED雪崩能效等级(Eas):1500 mJ
外壳连接:DRAIN配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:75 V最大漏极电流 (ID):250 A
最大漏源导通电阻:0.004 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JESD-30 代码:R-PSFM-T3JESD-609代码:e3
元件数量:1端子数量:3
工作模式:ENHANCEMENT MODE最高工作温度:175 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL最大脉冲漏极电流 (IDM):560 A
认证状态:Not Qualified表面贴装:NO
端子面层:Matte Tin (Sn)端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

IXTQ250N075T 数据手册

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Preliminary Technical Information  
TrenchMVTM  
Power MOSFET  
IXTH250N075T  
IXTQ250N075T  
VDSS = 75  
ID25 = 250  
RDS(on) 4.0 mΩ  
V
A
N-Channel Enhancement Mode  
Avalanche Rated  
TO-247 (IXTH)  
Symbol  
Test Conditions  
Maximum Ratings  
G
(TAB)  
D
S
VDSS  
VDGR  
TJ = 25° C to 175° C  
TJ = 25° C to 175° C; RGS = 1 MΩ  
75  
75  
V
V
TO-3P (IXTQ)  
VGSM  
Transient  
20  
V
ID25  
ILRMS  
IDM  
TC =25°C  
Lead Current Limit, RMS  
TC = 25° C, pulse width limited by TJM  
250  
75  
560  
A
A
A
IAR  
EAS  
TC =25°C  
TC =25°C  
40  
1.5  
A
J
G
D
S
(TAB)  
dv/dt  
PD  
IS IDM, di/dt 100 A/µs, VDD VDSS  
TJ 175° C, RG = 3.3 Ω  
3
V/ns  
G = Gate  
S = Source  
D = Drain  
TAB = Drain  
TC =25°C  
550  
W
TJ  
TJM  
Tstg  
-55 ... +175  
175  
-55 ... +175  
°C  
°C  
°C  
Features  
Ultra-low On Resistance  
Unclamped Inductive Switching (UIS)  
rated  
TL  
TSOLD  
1.6 mm (0.062 in.) from case for 10 s  
Plastic body for 10 seconds  
300  
260  
°C  
°C  
Low package inductance  
- easy to drive and to protect  
175 ° C Operating Temperature  
Md  
Mounting torque  
1.13 / 10 Nm/lb.in.  
Weight  
TO-3P  
TO-247  
5.5  
6
g
g
Advantages  
Easy to mount  
Space savings  
High power density  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25° C unless otherwise specified)  
Min. Typ.  
Max.  
Applications  
Automotive  
- Motor Drives  
- 42V Power Bus  
BVDSS  
VGS(th)  
IGSS  
VGS = 0 V, ID = 250 µA  
VDS = VGS, ID = 250 µA  
75  
V
V
2.0  
4.0  
- ABS Systems  
VGS  
=
20 V, VDS = 0 V  
200  
nA  
DC/DC Converters and Off-line UPS  
Primary Switch for 24V and 48V  
IDSS  
VDS = VDSS  
VGS = 0 V  
5
250  
µA  
µA  
Systems  
High Current Switching  
TJ = 150° C  
RDS(on)  
VGS = 10 V, ID = 50 A, Notes 1, 2  
3.3  
4.0 m Ω  
Applications  
DS99637(11/06)  
© 2006 IXYS CORPORATION All rights reserved  

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