型号 | 品牌 | 获取价格 | 描述 | 数据表 |
IXTP22N15MB | IXYS |
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Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET, | |
IXTP22N20MA | IXYS |
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Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET, | |
IXTP22N20MB | IXYS |
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Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET, | |
IXTP22N50PM | LITTELFUSE |
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Power Field-Effect Transistor, 8A I(D), 500V, 0.27ohm, 1-Element, N-Channel, Silicon, Meta | |
IXTP230N04T4 | LITTELFUSE |
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Power Field-Effect Transistor, | |
IXTP230N04T4 | IXYS |
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Power Field-Effect Transistor | |
IXTP230N04T4M | IXYS |
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Power Field-Effect Transistor, | |
IXTP230N04T4M | LITTELFUSE |
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Power Field-Effect Transistor, | |
IXTP230N075T2 | IXYS |
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TrenchT2TM Power MOSFET | |
IXTP230N075T2 | LITTELFUSE |
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这些器件具有40V至170V的漏极 - 源极电压额定值,并可提供高达600安培的高电流性能 |