IXTA200N055T2-7
Symbol
Test Conditions
Characteristic Values
Min. Typ. Max.
TO-263 (7-lead) (IXTA..7) Outline
(TJ = 25°C, unless otherwise specified)
gfs
VDS = 10V, ID = 60A, Note 1
VGS = 0V, VDS = 25V, f = 1MHz
50
80
S
Ciss
Coss
Crss
6970
1026
228
pF
pF
pF
td(on)
tr
td(off)
tf
26
22
49
27
ns
ns
ns
ns
Resistive Switching Times
V
GS = 10V, VDS = 30V, ID = 50A
RG = 3.3Ω (External)
Qg(on)
Qgs
109
35
nC
nC
nC
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
Qgd
24
Pins: 1 - Gate
2, 3 - Source
4 - Drain
RthJC
0.42 °C/W
5,6,7 - Source
Tab (8) - Drain
Source-Drain Diode
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
Min. Typ.
Max.
200
600
1.0
IS
VGS = 0V
A
A
V
ISM
VSD
Repetitive, Pulse width limited by TJM
IF = 50A, VGS = 0V, Note 1
IF = 100A, VGS = 0V
trr
49
2.6
64
ns
A
-di/dt = 100A/μs
VR = 27V
IRM
QRM
nC
Notes: 1. Pulse test, t ≤ 300μs; duty cycle, d ≤ 2%.
2. On through-hole packages, RDS(on) Kelvin test contact
location must be 5mm or less from the package body.
PRELIMINARY TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are derived
from data gathered during objective characterizations of preliminary engineering lots; but also may yet
contain some information supplied during a pre-production design evaluation. IXYS reserves the right
to change limits, test conditions, and dimensions without notice.
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered
by one or more of the following U.S. patents: 4,850,072 5,017,508
4,881,106 5,034,796
4,835,592 4,931,844
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1 6,683,344
6,534,343
6,583,505
6,727,585
6,710,405 B2 6,759,692
6,710,463
7,005,734 B2 7,157,338B2
7,063,975 B2
6,771,478 B2 7,071,537