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IXTA200N055T2-7 PDF预览

IXTA200N055T2-7

更新时间: 2024-10-29 14:56:35
品牌 Logo 应用领域
力特 - LITTELFUSE /
页数 文件大小 规格书
7页 168K
描述
这些器件具有40V至170V的漏极 - 源极电压额定值,并可提供高达600安培的高电流性能(Tc=@25oC)。 通过结合高电流额定值与紧凑的封装选择,这些尺寸更加小巧的器件能够控制更高的功率。

IXTA200N055T2-7 技术参数

生命周期:Active包装说明:,
Reach Compliance Code:unknown风险等级:5.45
JESD-609代码:e3湿度敏感等级:2
端子面层:Matte Tin (Sn)

IXTA200N055T2-7 数据手册

 浏览型号IXTA200N055T2-7的Datasheet PDF文件第1页浏览型号IXTA200N055T2-7的Datasheet PDF文件第3页浏览型号IXTA200N055T2-7的Datasheet PDF文件第4页浏览型号IXTA200N055T2-7的Datasheet PDF文件第5页浏览型号IXTA200N055T2-7的Datasheet PDF文件第6页浏览型号IXTA200N055T2-7的Datasheet PDF文件第7页 
IXTA200N055T2-7  
Symbol  
Test Conditions  
Characteristic Values  
Min. Typ. Max.  
TO-263 (7-lead) (IXTA..7) Outline  
(TJ = 25°C, unless otherwise specified)  
gfs  
VDS = 10V, ID = 60A, Note 1  
VGS = 0V, VDS = 25V, f = 1MHz  
50  
80  
S
Ciss  
Coss  
Crss  
6970  
1026  
228  
pF  
pF  
pF  
td(on)  
tr  
td(off)  
tf  
26  
22  
49  
27  
ns  
ns  
ns  
ns  
Resistive Switching Times  
V
GS = 10V, VDS = 30V, ID = 50A  
RG = 3.3Ω (External)  
Qg(on)  
Qgs  
109  
35  
nC  
nC  
nC  
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25  
Qgd  
24  
Pins: 1 - Gate  
2, 3 - Source  
4 - Drain  
RthJC  
0.42 °C/W  
5,6,7 - Source  
Tab (8) - Drain  
Source-Drain Diode  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
Min. Typ.  
Max.  
200  
600  
1.0  
IS  
VGS = 0V  
A
A
V
ISM  
VSD  
Repetitive, Pulse width limited by TJM  
IF = 50A, VGS = 0V, Note 1  
IF = 100A, VGS = 0V  
trr  
49  
2.6  
64  
ns  
A
-di/dt = 100A/μs  
VR = 27V  
IRM  
QRM  
nC  
Notes: 1. Pulse test, t 300μs; duty cycle, d 2%.  
2. On through-hole packages, RDS(on) Kelvin test contact  
location must be 5mm or less from the package body.  
PRELIMINARY TECHNICAL INFORMATION  
The product presented herein is under development. The Technical Specifications offered are derived  
from data gathered during objective characterizations of preliminary engineering lots; but also may yet  
contain some information supplied during a pre-production design evaluation. IXYS reserves the right  
to change limits, test conditions, and dimensions without notice.  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXYS MOSFETs and IGBTs are covered  
by one or more of the following U.S. patents: 4,850,072 5,017,508  
4,881,106 5,034,796  
4,835,592 4,931,844  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123 B1  
6,306,728 B1  
6,404,065 B1 6,683,344  
6,534,343  
6,583,505  
6,727,585  
6,710,405 B2 6,759,692  
6,710,463  
7,005,734 B2 7,157,338B2  
7,063,975 B2  
6,771,478 B2 7,071,537  

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