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IXTA200N085T7 PDF预览

IXTA200N085T7

更新时间: 2024-02-04 01:26:16
品牌 Logo 应用领域
IXYS 开关脉冲晶体管
页数 文件大小 规格书
5页 162K
描述
Power Field-Effect Transistor, 200A I(D), 85V, 0.005ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263, TO-263, 7 PIN

IXTA200N085T7 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete零件包装代码:D2PAK
包装说明:SMALL OUTLINE, R-PSSO-G6针数:4
Reach Compliance Code:compliantECCN代码:EAR99
风险等级:5.84雪崩能效等级(Eas):1 mJ
外壳连接:DRAIN配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:85 V最大漏极电流 (ID):200 A
最大漏源导通电阻:0.005 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码:TO-263JESD-30 代码:R-PSSO-G6
JESD-609代码:e3元件数量:1
端子数量:6工作模式:ENHANCEMENT MODE
最高工作温度:175 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
最大脉冲漏极电流 (IDM):540 A认证状态:Not Qualified
表面贴装:YES端子面层:Matte Tin (Sn)
端子形式:GULL WING端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

IXTA200N085T7 数据手册

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Preliminary Technical Information  
TrenchMVTM  
Power MOSFET  
VDSS = 85  
ID25 = 200  
RDS(on) 5.0 mΩ  
V
A
IXTA200N085T7  
N-Channel Enhancement Mode  
Avalanche Rated  
Symbol  
Test Conditions  
Maximum Ratings  
TO-263 (7-lead) (IXTA..7)  
VDSS  
VDGR  
TJ = 25°C to 175°C  
TJ = 25°C to 175°C; RGS = 1 MΩ  
85  
85  
V
V
VGSM  
Transient  
± 20  
V
1
ID25  
ILRMS  
IDM  
TC = 25°C  
200  
120  
540  
A
A
A
7
Lead Limited, RMS  
(TAB)  
TC = 25°C, pulse width limited by TJM  
Pin-out:1 - Gate  
2, 3 - Source  
4 - NC (cut)  
5,6,7 - Source  
TAB (8) - Drain  
IAR  
EAS  
TC = 25°C  
TC = 25°C  
25  
1.0  
A
mJ  
dv/dt  
PD  
IS IDM, di/dt 100 A/μs, VDD VDSS  
TJ 175°C, RG = 5 Ω  
3
V/ns  
TC = 25°C  
480  
W
Features  
TJ  
TJM  
Tstg  
-55 ... +175  
175  
-55 ... +175  
°C  
°C  
°C  
Ultra-low On Resistance  
Unclamped Inductive Switching (UIS)  
rated  
TL  
TSOLD  
1.6 mm (0.062 in.) from case for 10 s  
Plastic body for 10 seconds  
300  
260  
°C  
°C  
Low package inductance  
- easy to drive and to protect  
175 °C Operating Temperature  
Weight  
3
g
Advantages  
Easy to mount  
Space savings  
High power density  
Symbol  
Test Conditions  
Characteristic Values  
Applications  
Automotive  
- Motor Drives  
(TJ = 25°C unless otherwise specified)  
Min. Typ.  
Max.  
BVDSS  
VGS(th)  
IGSS  
VGS = 0 V, ID = 250 μA  
VDS = VGS, ID = 250 μA  
VGS = ± 20 V, VDS = 0 V  
85  
V
V
- 42V Power Bus  
2.0  
4.0  
- ABS Systems  
± 200  
nA  
DC/DC Converters and Off-line UPS  
Primary Switch for 24V and 48V  
IDSS  
VDS = VDSS  
VGS = 0 V  
5
μA  
μA  
Systems  
TJ = 150°C  
250  
High Current Switching  
Applications  
RDS(on)  
VGS = 10 V, ID = 25 A, Note 1  
4.0  
5.0 mΩ  
DS99702 (11/06)  
© 2006 IXYS CORPORATION All rights reserved  

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