Preliminary Technical Information
X-Class
Power MOSFET
VDSS = 650V
ID25 = 20A
RDS(on) 210m
IXTA20N65X
IXTP20N65X
IXTH20N65X
N-Channel Enhancement Mode
TO-263 (IXTA)
G
S
D (Tab)
Symbol
VDSS
Test Conditions
Maximum Ratings
TO-220 (IXTP)
TJ = 25C to 150C
650
650
V
V
VDGR
TJ = 25C to 150C, RGS = 1M
VGSS
VGSM
Continuous
Transient
30
40
V
V
G
D
D (Tab)
S
ID25
IDM
TC = 25C
TC = 25C, Pulse Width Limited by TJM
20
40
A
A
TO-247 (IXTH)
dv/dt
PD
IS ID25, VDD VDSS, TJ 150°C
TC = 25C
30
V/ns
320
W
G
D
S
TJ
-55 ... +150
150
C
C
C
D (Tab)
TJM
Tstg
-55 ... +150
TL
TSOLD
Maximum Lead Temperature for Soldering
1.6 mm (0.062in.) from Case for 10s
300
260
°C
°C
G = Gate
S = Source
D
= Drain
Tab = Drain
FC
Md
Mounting Force (TO-263)
Mounting Torque (TO-220 & TO-247)
10.65 / 2.2..14.6
1.13 / 10
N/lb
Nm/lb.in
Features
Weight
TO-263
TO-220
TO-247
2.5
3.0
6.0
g
g
g
International Standard Packages
Low RDS(ON) and QG
Low Package Inductance
Advantages
Symbol
Test Conditions
Characteristic Values
High Power Density
Easy to Mount
Space Savings
(TJ = 25C, Unless Otherwise Specified)
Min.
Typ.
Max.
BVDSS
VGS(th)
IGSS
VGS = 0V, ID = 250μA
VDS = VGS, ID = 250μA
VGS = 30V, VDS = 0V
VDS = VDSS, VGS = 0V
650
V
3.0
5.5
V
Applications
100 nA
A
Switch-Mode and Resonant-Mode
Power Supplies
DC-DC Converters
PFC Circuits
AC and DC Motor Drives
Robotics and Servo Controls
IDSS
5
TJ = 125C
50 A
RDS(on)
VGS = 10V, ID = 0.5 • ID25, Note 1
210 m
DS100564E(6/15)
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