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IXTA20N65X PDF预览

IXTA20N65X

更新时间: 2024-01-21 17:33:13
品牌 Logo 应用领域
IXYS /
页数 文件大小 规格书
6页 241K
描述
Power Field-Effect Transistor,

IXTA20N65X 技术参数

生命周期:TransferredReach Compliance Code:compliant
风险等级:8.32Base Number Matches:1

IXTA20N65X 数据手册

 浏览型号IXTA20N65X的Datasheet PDF文件第1页浏览型号IXTA20N65X的Datasheet PDF文件第3页浏览型号IXTA20N65X的Datasheet PDF文件第4页浏览型号IXTA20N65X的Datasheet PDF文件第5页浏览型号IXTA20N65X的Datasheet PDF文件第6页 
IXTA20N65X IXTP20N65X  
IXTH20N65X  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25C, Unless Otherwise Specified)  
Min.  
Typ.  
Max  
gfs  
VDS = 10V, ID = 0.5 • ID25, Note 1  
Gate Input Resistance  
9
15  
S
RGi  
3.4  
Ciss  
Coss  
Crss  
1390  
1060  
22  
pF  
pF  
pF  
VGS = 0V, VDS = 25V, f = 1MHz  
Effective Output Capacitance  
Co(er)  
Co(tr)  
77  
pF  
pF  
Energy related  
Time related  
VGS = 0V  
VDS = 0.8 • VDSS  
232  
td(on)  
tr  
td(off)  
tf  
18  
30  
46  
22  
ns  
ns  
ns  
ns  
Resistive Switching Times  
GS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25  
V
RG = 5(External)  
Qg(on)  
Qgs  
35  
7
nC  
nC  
nC  
VGS = 10V, VDS = 0.5 VDSS, ID = 0.5 ID25  
Qgd  
18  
RthJC  
RthCS  
0.39 C/W  
TO-220  
TO-247  
0.50  
0.21  
C/W  
C/W  
Source-Drain Diode  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25C, Unless Otherwise Specified)  
Min.  
Typ.  
Max  
IS  
VGS = 0V  
20  
A
A
ISM  
VSD  
Repetitive, pulse Width Limited by TJM  
IF = IS, VGS = 0V, Note 1  
80  
1.4  
V
trr  
QRM  
IRM  
350  
4.45  
25  
ns  
IF = 10A, -di/dt = 100A/μs  
C  
VR = 100V  
A
Note 1. Pulse test, t 300s, duty cycle, d 2%.  
PRELIMANARY TECHNICAL INFORMATION  
The product presented herein is under development. The Technical Specifications offered are  
derived from a subjective evaluation of the design, based upon prior knowledge and experi-  
ence, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right  
to change limits, test conditions, and dimensions without notice.  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXYS MOSFETs and IGBTs are covered  
by one or more of the following U.S. patents: 4,860,072 5,017,508  
4,881,106 5,034,796  
4,835,592 4,931,844  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123B1  
6,306,728B1  
6,404,065B1  
6,534,343  
6,583,505  
6,683,344  
6,710,405B2 6,759,692  
6,710,463  
6,727,585  
7,005,734B2 7,157,338B2  
7,063,975B2  
6,771,478B2 7,071,537  

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