Datasheet > IXTA220N04T2-7

IXTA220N04T2-7

更新时间： 2024-02-05 06:35:35

品牌	Logo	应用领域
IXYS		局域网开关脉冲晶体管
页数	文件大小	规格书
6页	170K
描述
Power Field-Effect Transistor, 220A I(D), 40V, 0.0035ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263, PLASTIC PACKAGE-7

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技术参数
数据手册

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IXTA220N04T2-7 技术参数

生命周期：	Active	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.39
JESD-609代码：	e3	湿度敏感等级：	2
端子面层：	Matte Tin (Sn)	Base Number Matches：	1

IXTA220N04T2-7 数据手册

TrenchT2^TM

Power MOSFET

V_DSS= 40V

I_D25= 220A

R_DS(on)≤ 3.5mΩ

IXTA220N04T2-7

N-Channel Enhancement Mode

Avalanche Rated

TO-263 (7-lead)

Symbol

V_DSS

Test Conditions

Maximum Ratings

T_J= 25°C to 175°C

T_J= 25°C to 175°C, R_GS= 1MΩ

V_DGR

(TAB)

V_GSM

Transient

± 20

I_D25

I_LRMS

I_DM

T_C= 25°C

220

160

660

Pins: 1 - Gate

2, 3 - Source

Lead Current Limit, RMS

T_C= 25°C, pulse width limited by T_JM

5,6,7 - Source

TAB (8) - Drain

I_AR

T_C= 25°C

110

600

E_AS

P_D

T_C= 25°C

360

Features

T_J

-55 ... +175

175

°C

^zInternational standard package

^z175°C Operating Temperature

^zHigh current handling capability

^zAvalanche Rated

T_JM

T_stg

-55 ... +175

T_L

T_SOLD

1.6mm (0.062in.) from case for 10s

Plastic body for 10 seconds

300

260

°C

Low R_DS(on)

Weight

Advantages

Easy to mount

Space savings

High power density

Applications

Symbol

Test Conditions

Characteristic Values

(T_J= 25°C unless otherwise specified)

Min. Typ.

Max.

• Synchronous Buck Converters

• High Current Switching Power

Supplies

BV_DSS

V_GS(th)

I_GSS

V_GS= 0V, I_D= 250μA

V_DS= V_GS, I_D= 250μA

V_GS= ± 20V, V_DS= 0V

2.0

4.0

• Battery Powered Electric Motors

±200 nA

μA

• Resonant-mode power supplies

• Electronics Ballast Application

• Class D Audio Amplifiers

I_DSS

V_DS= V_DSS

V_GS= 0V

T_J= 150°C

50 μA

3.5 mΩ

R_DS(on)

V_GS= 10V, I_D= 50A, Notes 1, 2

2.8

DS99962A(11/08)

12 3 4 5 6

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