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IXTA220N04T2-7 PDF预览

IXTA220N04T2-7

更新时间: 2024-11-18 21:14:31
品牌 Logo 应用领域
IXYS 局域网开关脉冲晶体管
页数 文件大小 规格书
6页 170K
描述
Power Field-Effect Transistor, 220A I(D), 40V, 0.0035ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263, PLASTIC PACKAGE-7

IXTA220N04T2-7 技术参数

是否无铅: 不含铅生命周期:Transferred
零件包装代码:TO-263包装说明:PLASTIC PACKAGE-7
针数:3Reach Compliance Code:unknown
ECCN代码:EAR99风险等级:5.67
其他特性:AVALANCHE RATED雪崩能效等级(Eas):600 mJ
外壳连接:DRAIN配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:40 V最大漏极电流 (Abs) (ID):220 A
最大漏极电流 (ID):220 A最大漏源导通电阻:0.0035 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJEDEC-95代码:TO-263
JESD-30 代码:R-PSSO-G6JESD-609代码:e3
湿度敏感等级:2元件数量:1
端子数量:6工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):360 W最大脉冲漏极电流 (IDM):660 A
认证状态:Not Qualified子类别:FET General Purpose Power
表面贴装:YES端子面层:Matte Tin (Sn)
端子形式:GULL WING端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

IXTA220N04T2-7 数据手册

 浏览型号IXTA220N04T2-7的Datasheet PDF文件第2页浏览型号IXTA220N04T2-7的Datasheet PDF文件第3页浏览型号IXTA220N04T2-7的Datasheet PDF文件第4页浏览型号IXTA220N04T2-7的Datasheet PDF文件第5页浏览型号IXTA220N04T2-7的Datasheet PDF文件第6页 
TrenchT2TM  
Power MOSFET  
VDSS = 40V  
ID25 = 220A  
RDS(on) 3.5mΩ  
IXTA220N04T2-7  
N-Channel Enhancement Mode  
Avalanche Rated  
TO-263 (7-lead)  
Symbol  
VDSS  
Test Conditions  
Maximum Ratings  
1
TJ = 25°C to 175°C  
TJ = 25°C to 175°C, RGS = 1MΩ  
40  
40  
V
V
VDGR  
7
(TAB)  
VGSM  
Transient  
± 20  
V
ID25  
ILRMS  
IDM  
TC = 25°C  
220  
160  
660  
A
A
A
Pins: 1 - Gate  
2, 3 - Source  
Lead Current Limit, RMS  
TC = 25°C, pulse width limited by TJM  
5,6,7 - Source  
TAB (8) - Drain  
IAR  
TC = 25°C  
TC = 25°C  
110  
600  
A
EAS  
mJ  
PD  
TC = 25°C  
360  
W
Features  
TJ  
-55 ... +175  
175  
°C  
°C  
°C  
z International standard package  
z 175°C Operating Temperature  
z High current handling capability  
z Avalanche Rated  
TJM  
Tstg  
-55 ... +175  
TL  
TSOLD  
1.6mm (0.062in.) from case for 10s  
Plastic body for 10 seconds  
300  
260  
°C  
°C  
z
Low RDS(on)  
Weight  
3
g
Advantages  
z
Easy to mount  
Space savings  
High power density  
z
z
Applications  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25°C unless otherwise specified)  
Min. Typ.  
Max.  
Synchronous Buck Converters  
High Current Switching Power  
Supplies  
BVDSS  
VGS(th)  
IGSS  
VGS = 0V, ID = 250μA  
VDS = VGS, ID = 250μA  
VGS = ± 20V, VDS = 0V  
40  
V
V
2.0  
4.0  
Battery Powered Electric Motors  
±200 nA  
μA  
Resonant-mode power supplies  
Electronics Ballast Application  
Class D Audio Amplifiers  
IDSS  
VDS = VDSS  
VGS = 0V  
5
TJ = 150°C  
50 μA  
3.5 mΩ  
RDS(on)  
VGS = 10V, ID = 50A, Notes 1, 2  
2.8  
DS99962A(11/08)  
© 2008 IXYS CORPORATION, All rights reserved  

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