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IXTA220N04T2-7 PDF预览

IXTA220N04T2-7

更新时间: 2024-01-07 22:24:17
品牌 Logo 应用领域
IXYS 局域网开关脉冲晶体管
页数 文件大小 规格书
6页 170K
描述
Power Field-Effect Transistor, 220A I(D), 40V, 0.0035ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263, PLASTIC PACKAGE-7

IXTA220N04T2-7 技术参数

生命周期:Active包装说明:,
Reach Compliance Code:unknown风险等级:5.39
JESD-609代码:e3湿度敏感等级:2
端子面层:Matte Tin (Sn)Base Number Matches:1

IXTA220N04T2-7 数据手册

 浏览型号IXTA220N04T2-7的Datasheet PDF文件第1页浏览型号IXTA220N04T2-7的Datasheet PDF文件第2页浏览型号IXTA220N04T2-7的Datasheet PDF文件第4页浏览型号IXTA220N04T2-7的Datasheet PDF文件第5页浏览型号IXTA220N04T2-7的Datasheet PDF文件第6页 
IXTA220N04T2-7  
Fig. 1. Output Characteristics  
@ 25ºC  
Fig. 2. Extended Output Characteristics  
@ 25ºC  
350  
300  
250  
200  
150  
100  
50  
220  
200  
180  
160  
140  
120  
100  
80  
VGS = 15V  
VGS = 15V  
10V  
9V  
10V  
9V  
8V  
8V  
7V  
7V  
6V  
6V  
5V  
60  
40  
5V  
20  
0
0
0
0.1  
0.2  
0.3  
0.4  
0.5  
0.6  
0.7  
0.0  
0.5  
1.0  
1.5  
2.0  
2.5  
3.0  
3.5  
VDS - Volts  
VDS - Volts  
Fig. 4. RDS(on) Normalized to ID = 110A Value  
vs. Junction Temperature  
Fig. 3. Output Characteristics  
@ 150ºC  
220  
200  
180  
160  
140  
120  
100  
80  
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
VGS = 15V  
VGS = 10V  
10V  
9V  
8V  
I D = 220A  
I D = 110A  
7V  
6V  
60  
40  
5V  
20  
0
-50  
-25  
0
25  
50  
75  
100  
125  
150  
175  
0.0  
0.2  
0.4  
0.6  
0.8  
1.0  
1.2  
1.4  
TJ - Degrees Centigrade  
VDS - Volts  
Fig. 5. RDS(on) Normalized to ID = 110A Value  
vs. Drain Current  
Fig. 6. Drain Current vs. Case Temperature  
2.2  
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
180  
External Lead Current Limit  
VGS = 10V  
160  
140  
120  
100  
80  
15V  
- - - -  
TJ = 175ºC  
60  
TJ = 25ºC  
40  
20  
0
0
40  
80  
120  
160  
200  
240  
280  
320  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
175  
ID - Amperes  
TC - Degrees Centigrade  
© 2008 IXYS CORPORATION, All rights reserved  

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