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IXTA220N04T2-7 PDF预览

IXTA220N04T2-7

更新时间: 2024-02-03 03:49:00
品牌 Logo 应用领域
IXYS 局域网开关脉冲晶体管
页数 文件大小 规格书
6页 170K
描述
Power Field-Effect Transistor, 220A I(D), 40V, 0.0035ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263, PLASTIC PACKAGE-7

IXTA220N04T2-7 技术参数

生命周期:Active包装说明:,
Reach Compliance Code:unknown风险等级:5.39
JESD-609代码:e3湿度敏感等级:2
端子面层:Matte Tin (Sn)Base Number Matches:1

IXTA220N04T2-7 数据手册

 浏览型号IXTA220N04T2-7的Datasheet PDF文件第1页浏览型号IXTA220N04T2-7的Datasheet PDF文件第2页浏览型号IXTA220N04T2-7的Datasheet PDF文件第3页浏览型号IXTA220N04T2-7的Datasheet PDF文件第5页浏览型号IXTA220N04T2-7的Datasheet PDF文件第6页 
IXTA220N04T2-7  
Fig. 7. Input Admittance  
Fig. 8. Transconductance  
120  
100  
80  
60  
40  
20  
0
160  
140  
120  
100  
80  
TJ = - 40ºC  
25ºC  
150ºC  
TJ =150ºC  
25ºC  
- 40ºC  
60  
40  
20  
0
2.5  
3
3.5  
4
4.5  
5
5.5  
6
6.5  
1.3  
40  
0
20  
40  
60  
80  
100  
120  
140  
160  
120  
100  
VGS - Volts  
ID - Amperes  
Fig. 9. Forward Voltage Drop of  
Intrinsic Diode  
Fig. 10. Gate Charge  
10  
9
8
7
6
5
4
3
2
1
0
300  
270  
240  
210  
180  
150  
120  
90  
VDS = 20V  
I
D = 110A  
I G = 10mA  
TJ = 150ºC  
60  
TJ = 25ºC  
30  
0
0.3  
0.4  
0.5  
0.6  
0.7  
0.8  
0.9  
1.0  
1.1  
1.2  
0
20  
40  
60  
80  
100  
VSD - Volts  
QG - NanoCoulombs  
Fig. 11. Capacitance  
Fig. 12. Forward-Bias Safe Operating Area  
100,000  
10,000  
1,000  
100  
1,000  
f
= 1 MHz  
R
Limit  
DS(on)  
25µs  
C
100µs  
iss  
100  
10  
1
External Lead Limit  
1ms  
C
oss  
10ms  
DC  
T
T
= 175ºC  
= 25ºC  
J
100ms  
C
rss  
C
Single Pulse  
0
5
10  
15  
20  
25  
30  
35  
1
10  
VDS - Volts  
VDS - Volts  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXYS REF: T_220N04T2(V5) 4-24-08-C  

IXTA220N04T2-7 替代型号

型号 品牌 替代类型 描述 数据表
IXTP220N04T2 IXYS

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IXTA220N04T2 IXYS

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