Datasheet > IXTA220N075T7

IXTA220N075T7

更新时间： 2024-11-18 22:57:35

品牌	Logo	应用领域
IXYS		/
页数	文件大小	规格书
5页	163K
描述
MOSFET N-CH 75V 220A TO-263-7

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中文翻译

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数据手册
替代型号

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IXTA220N075T7 数据手册

Preliminary Technical Information

TrenchMV^TM

Power MOSFET

V_DSS= 75

I_D25= 220

R_DS(on)≤ 4.5 mΩ

IXTA220N075T7

N-ChannelEnhancementMode

AvalancheRated

Symbol

TestConditions

Maximum Ratings

TO-263 (7-lead) (IXTA..7)

V_DSS

V_DGR

T_J= 25°C to 175°C

T_J= 25°C to 175°C; R_GS= 1 MΩ

V_GSM

Transient

± 20

I_D25

I_LRMS

I_DM

T_C= 25°C

220

120

600

Package Current Limit, RMS

(TAB)

T_C= 25°C, pulse width limited by T_JM

Pin-out:1 - Gate

2, 3 - Source

4 - NC (cut)

5,6,7 - Source

TAB (8) - Drain

I_AR

E_AS

T_C= 25°C

1.0

dv/dt

P_D

I_S≤ I_DM, di/dt ≤ 100 A/μs, V_DD≤ V_DSS

T_J≤ 175°C, R_G= 3.3 Ω

V/ns

Features

T_C= 25°C

480

^ꢀUltra-low On Resistance

^ꢀUnclamped Inductive Switching (UIS)

rated

^ꢀLow package inductance

- easy to drive and to protect

^ꢀ175 °C Operating Temperature

T_J

T_JM

T_stg

-55 ... +175

175

-55 ... +175

°C

T_L

T_sold

1.6 mm (0.062 in.) from case for 10 s

Plastic body for 10 seconds

300

260

°C

Weight

Advantages

ꢀ

Easy to mount

ꢀ

Space savings

ꢀ

High power density

Applications

Automotive

- Motor Drives

Symbol

TestConditions

Characteristic Values

ꢀ

(T_J= 25°C unless otherwise specified)

Min. Typ.

Max.

- 42V Power Bus

BV_DSS

V_GS(th)

I_GSS

V_GS= 0 V, I_D= 250 μA

V_DS= V_GS, I_D= 250 μA

V_GS= ± 20 V, V_DS= 0 V

- ABS Systems

2.0

4.0

V ꢀ

DC/DC Converters and Off-line UPS

Primary Switch for 24V and 48V

Systems

ꢀ

± 200

ꢀ

High Current Switching

Applications

I_DSS

V_DS= V_DSS

V_GS= 0 V

μA

T_J= 150°C

250

R_DS(on)

V_GS= 10 V, I_D= 25 A, Note 1

3.6

4.5 mΩ

DS99693 (11/06)

12 3 4 5

中文翻译

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IXTA220N075T7 替代型号

型号	品牌	替代类型	描述	数据表
IXTA230N075T2-7	IXYS	类似代替	Power Field-Effect Transistor, 230A I(D), 75V, 0.0042ohm, 1-Element, N-Channel, Silicon, M
IXFA230N075T2-7	IXYS	类似代替	TrenchT2 HiperFET Power MOSFET
IXFH230N075T2	IXYS	功能相似	TrenchT2 HiperFET Power MOSFET

与IXTA220N075T7相关器件

型号	品牌	获取价格	描述	数据表
IXTA230N04T4	LITTELFUSE	获取价格	Power Field-Effect Transistor,
IXTA230N075T2	IXYS	获取价格	N-Channel Enhancement Mode Avalanche Rated
IXTA230N075T2	LITTELFUSE	获取价格	这些器件具有40V至170V的漏极 - 源极电压额定值，并可提供高达600安培的高电流性能
IXTA230N075T2-7	IXYS	获取价格	Power Field-Effect Transistor, 230A I(D), 75V, 0.0042ohm, 1-Element, N-Channel, Silicon, M
IXTA230N075T2-7	LITTELFUSE	获取价格	Power Field-Effect Transistor,
IXTA240N055T	IXYS	获取价格	Power Field-Effect Transistor, 240A I(D), 55V, 0.0036ohm, 1-Element, N-Channel, Silicon, M
IXTA24N65X2	LITTELFUSE	获取价格	Power Field-Effect Transistor,
IXTA24N65X2	IXYS	获取价格	Power Field-Effect Transistor
IXTA24P085T	IXYS	获取价格	Power Field-Effect Transistor, 24A I(D), 85V, 0.065ohm, 1-Element, P-Channel, Silicon, Met
IXTA24P085T	LITTELFUSE	获取价格	Power Field-Effect Transistor,

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