Preliminary Technical Information
TrenchMVTM
Power MOSFET
VDSS = 75
ID25 = 220
RDS(on) ≤ 4.5 mΩ
V
A
IXTA220N075T7
N-ChannelEnhancementMode
AvalancheRated
Symbol
TestConditions
Maximum Ratings
TO-263 (7-lead) (IXTA..7)
VDSS
VDGR
TJ = 25°C to 175°C
TJ = 25°C to 175°C; RGS = 1 MΩ
75
75
V
V
VGSM
Transient
± 20
V
1
ID25
ILRMS
IDM
TC = 25°C
220
120
600
A
A
A
7
Package Current Limit, RMS
(TAB)
TC = 25°C, pulse width limited by TJM
Pin-out:1 - Gate
2, 3 - Source
4 - NC (cut)
5,6,7 - Source
TAB (8) - Drain
IAR
EAS
TC = 25°C
TC = 25°C
25
1.0
A
J
dv/dt
PD
IS ≤ IDM, di/dt ≤ 100 A/μs, VDD ≤ VDSS
TJ ≤ 175°C, RG = 3.3 Ω
3
V/ns
Features
TC = 25°C
480
W
ꢀUltra-low On Resistance
ꢀUnclamped Inductive Switching (UIS)
rated
ꢀLow package inductance
- easy to drive and to protect
ꢀ175 °C Operating Temperature
TJ
TJM
Tstg
-55 ... +175
175
-55 ... +175
°C
°C
°C
TL
Tsold
1.6 mm (0.062 in.) from case for 10 s
Plastic body for 10 seconds
300
260
°C
°C
Weight
3
g
Advantages
ꢀ
Easy to mount
ꢀ
Space savings
ꢀ
High power density
Applications
Automotive
- Motor Drives
Symbol
TestConditions
Characteristic Values
ꢀ
(TJ = 25°C unless otherwise specified)
Min. Typ.
Max.
- 42V Power Bus
BVDSS
VGS(th)
IGSS
VGS = 0 V, ID = 250 μA
VDS = VGS, ID = 250 μA
VGS = ± 20 V, VDS = 0 V
75
V
- ABS Systems
2.0
4.0
V ꢀ
DC/DC Converters and Off-line UPS
Primary Switch for 24V and 48V
Systems
ꢀ
± 200
nA
ꢀ
High Current Switching
Applications
IDSS
VDS = VDSS
VGS = 0 V
5
μA
μA
TJ = 150°C
250
RDS(on)
VGS = 10 V, ID = 25 A, Note 1
3.6
4.5 mΩ
DS99693 (11/06)
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