Datasheet > IXTA230N04T4

IXTA230N04T4

更新时间： 2024-11-19 09:23:47

品牌	Logo	应用领域
力特 - LITTELFUSE		/
页数	文件大小	规格书
7页	176K
描述
Power Field-Effect Transistor,

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

IXTA230N04T4 数据手册

Advance Technical Information

TrenchT4^TM

Power MOSFET

V_DSS= 40V

I_D25= 230A

R_DS(on) 2.9m

IXTA230N04T4

IXTP230N04T4

N-Channel Enhancement Mode

Avalanche Rated

TO-263 AA (IXTA)

Symbol

V_DSS

Test Conditions

Maximum Ratings

D (Tab)

T_J= 25C to 175C

V_DGR

T_J= 25C to 175C, R_GS= 1M

TO-220AB (IXTP)

V_GSM

Transient

15

I_D25

I_LRMS

T_C= 25C

Lead Current Limit, RMS

230

160

I_DM

T_C= 25C, Pulse Width Limited by T_JM

700

D (Tab)

= Drain

I_A

E_AS

T_C= 25C

100

600

G = Gate

P_D

T_C= 25C

340

S = Source

Tab = Drain

T_J

T_JM

T_stg

-55 ... +175

175

-55 ... +175

C

Features

^International Standard Packages

^175°C Operating Temperature

^High Current Handling Capability

^Avalanche Rated

T_L

T_SOLD

Maximum Lead Temperature for Soldering

1.6 mm (0.062in.) from Case for 10s

300

260

°C

M_d

Mounting Torque

(TO-220)

1.13 / 10

Nm/lb.in.

Weight

TO-263

TO-220

2.5

3.0



Low R_DS(on)

Advantages



Easy to Mount

Space Savings

High Power Density



Symbol

Test Conditions

Characteristic Values

(T_J= 25C Unless Otherwise Specified)

Min. Typ.

2.0

Max.

Applications

BV_DSS

V_GS(th)

I_GSS

V_GS= 0V, I_D= 250A

V_DS= V_GS, I_D= 250A

V_GS= 15V, V_DS= 0V

V_DS= V_DSS, V_GS= 0V

4.0

• Synchronous Buck Converters

• High Current Switching Power

Supplies

            200 nA

A

I_DSS

• Battery Powered Electric Motors

T_J= 150C

V_GS= 10V, I_D= 0.5 • I_D25, Notes 1,2

250 A

2.9 m

• Resonant-Mode Power Supplies

• Electronics Ballast Application

• Class D Audio Amplifiers

R_DS(on)

DS100729(5/16)

12 3 4 5 6 7

中文翻译

下载PDF

与IXTA230N04T4相关器件

型号	品牌	获取价格	描述	数据表
IXTA230N075T2	IXYS	获取价格	N-Channel Enhancement Mode Avalanche Rated
IXTA230N075T2	LITTELFUSE	获取价格	这些器件具有40V至170V的漏极 - 源极电压额定值，并可提供高达600安培的高电流性能
IXTA230N075T2-7	IXYS	获取价格	Power Field-Effect Transistor, 230A I(D), 75V, 0.0042ohm, 1-Element, N-Channel, Silicon, M
IXTA230N075T2-7	LITTELFUSE	获取价格	Power Field-Effect Transistor,
IXTA240N055T	IXYS	获取价格	Power Field-Effect Transistor, 240A I(D), 55V, 0.0036ohm, 1-Element, N-Channel, Silicon, M
IXTA24N65X2	LITTELFUSE	获取价格	Power Field-Effect Transistor,
IXTA24N65X2	IXYS	获取价格	Power Field-Effect Transistor
IXTA24P085T	IXYS	获取价格	Power Field-Effect Transistor, 24A I(D), 85V, 0.065ohm, 1-Element, P-Channel, Silicon, Met
IXTA24P085T	LITTELFUSE	获取价格	Power Field-Effect Transistor,
IXTA260N055T2	IXYS	获取价格	Power Field-Effect Transistor, 260A I(D), 55V, 0.0033ohm, 1-Element, N-Channel, Silicon, M