是否无铅: | 不含铅 | 生命周期: | Transferred |
零件包装代码: | D2PAK | 包装说明: | PLASTIC, TO-263, 7 PIN |
针数: | 4 | Reach Compliance Code: | unknown |
ECCN代码: | EAR99 | 风险等级: | 5.7 |
其他特性: | AVALANCHE RATED | 雪崩能效等级(Eas): | 850 mJ |
外壳连接: | DRAIN | 配置: | SINGLE WITH BUILT-IN DIODE |
最小漏源击穿电压: | 75 V | 最大漏极电流 (Abs) (ID): | 230 A |
最大漏极电流 (ID): | 230 A | 最大漏源导通电阻: | 0.0042 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JEDEC-95代码: | TO-263 |
JESD-30 代码: | R-PSSO-G6 | JESD-609代码: | e3 |
湿度敏感等级: | 2 | 元件数量: | 1 |
端子数量: | 6 | 工作模式: | ENHANCEMENT MODE |
最高工作温度: | 150 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
峰值回流温度(摄氏度): | NOT SPECIFIED | 极性/信道类型: | N-CHANNEL |
最大功率耗散 (Abs): | 480 W | 最大脉冲漏极电流 (IDM): | 700 A |
认证状态: | Not Qualified | 子类别: | FET General Purpose Power |
表面贴装: | YES | 端子面层: | Matte Tin (Sn) |
端子形式: | GULL WING | 端子位置: | SINGLE |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 描述 | 获取价格 | 数据表 |
IXTA240N055T | IXYS | Power Field-Effect Transistor, 240A I(D), 55V, 0.0036ohm, 1-Element, N-Channel, Silicon, M |
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IXTA24N65X2 | LITTELFUSE | Power Field-Effect Transistor, |
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IXTA24N65X2 | IXYS | Power Field-Effect Transistor |
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IXTA24P085T | IXYS | Power Field-Effect Transistor, 24A I(D), 85V, 0.065ohm, 1-Element, P-Channel, Silicon, Met |
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IXTA24P085T | LITTELFUSE | Power Field-Effect Transistor, |
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IXTA260N055T2 | IXYS | Power Field-Effect Transistor, 260A I(D), 55V, 0.0033ohm, 1-Element, N-Channel, Silicon, M |
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