Datasheet > IXTA220N04T2-TRL

IXTA220N04T2-TRL

更新时间： 2024-01-07 22:13:47

品牌	Logo	应用领域
IXYS		/
页数	文件大小	规格书
6页	255K
描述
Power Field-Effect Transistor,

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技术参数
数据手册

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IXTA220N04T2-TRL 技术参数

生命周期：	Active	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.7
Base Number Matches：	1

IXTA220N04T2-TRL 数据手册

TrenchT2^TM

Power MOSFET

V_DSS= 40V

I_D25= 220A

R_DS(on) 3.5m

IXTA220N04T2

IXTP220N04T2

N-Channel Enhancement Mode

Avalanche Rated

TO-263 (IXTA)

D (Tab)

TO-220 (IXTP)

Symbol

V_DSS

Test Conditions

Maximum Ratings

T_J= 25C to 175C

V_DGR

T_J= 25C to 175C, R_GS= 1M

V_GSM

Transient

20

I_D25

I_L(RMS)

I_DM

T_C= 25C

External Lead Current Limit

T_C= 25C, Pulse Width Limited by T_JM

220

120

660

D (Tab)

G = Gate

= Drain

S = Source Tab = Drain

I_A

T_C= 25C

110

600

E_AS

P_D

T_C= 25C

360

Features

T_J

-55 ... +175

175



C

T_JM

T_stg



International Standard Packages

Avalanche Rated

Low Package Inductance

Fast Intrinsic Rectifier

-55 ... +175



T_L

T_SOLD

Maximum Lead Temperature for Soldering

1.6 mm (0.062in.) from Case for 10s

300

260

°C



175°C Operating Temperature

High Current Handling Capability

ROHS Compliant

High Performance Trench

F_C

M_d

Mounting Force (TO-263)

Mounting Torque (TO-220)

10..65 / 2.2..14.6

1.13 / 10

N/lb

Nm/lb.in



Weight

TO-263

TO-220

2.5

3.0

Technology for extremely low R_DS(on)

Advantages



High Power Density

Easy to Mount

Space Savings



Symbol

Test Conditions

Characteristic Values



(T_J= 25C Unless Otherwise Specified)

Min. Typ.

Max.

BV_DSS

V_GS(th)

I_GSS

V_GS= 0V, I_D= 250A

V_DS= V_GS, I_D= 250A

V_GS=  20V, V_DS= 0V

V_DS= V_DSS, V_GS= 0V

Applications

2.0

4.0



Automotive Engine Control

Synchronous Buck Converter

           200 nA

A



I_DSS

(for Notebook SystemPower &

T_J= 150C

V_GS= 10V, I_D= 50A, Notes 1 & 2

50 A

3.5 m

General Purpose Point & Load)

DC/DC Converters

High Current Switching Applications



R_DS(on)

2.8



Power Train Management

Distributed Power Architecture

_

DS99918D(7/18)

12 3 4 5 6

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