Datasheet > IXTA220N04T2-TRL

IXTA220N04T2-TRL

更新时间： 2024-01-31 08:15:37

品牌	Logo	应用领域
IXYS		/
页数	文件大小	规格书
6页	255K
描述
Power Field-Effect Transistor,

阅读下载

中文翻译

获取价格

技术参数
数据手册

如果您发现信息不准确，欢迎纠错

IXTA220N04T2-TRL 技术参数

生命周期：	Active	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.7
Base Number Matches：	1

IXTA220N04T2-TRL 数据手册

IXTA220N04T2

IXTP220N04T2

Symbol

Test Conditions

Characteristic Values

TO-263 Outline

(T_J= 25C Unless Otherwise Specified)

Min.

Typ.

Max.

g_fs

V_DS= 10V, I_D= 60A, Note 1

C_iss

C_oss

C_rss

6820

1185

250

V_GS= 0V, V_DS= 25V, f = 1MHz

0.43 [11.0]

0

0.34 [8.7]

t_d(on)

t_r

t_d(off)

t_f

Resistive Switching Times

0.66 [16.6]

_GS= 10V, V_DS= 20V, I_D= 50A

1 - Gate

2,4 - Drain

3 - Source

0.20 [5.0]

0.10 [2.5]

60.12 [3.0]

0.06 [1.6]

R_G= 3.3 (External)

Q_g(on)

Q_gs

112

V_GS= 10V, V_DS= 0.5 • V_DSS, I_D= 0.5 • I_DSS

Q_gd

R_thJC

R_thCS

0.42 C/W

C/W

TO-220

0.50

Source-Drain Diode

Symbol

Test Conditions

Characteristic Values

(T_J= 25C Unless Otherwise Specified)

Min.

Typ.

Max.

220

660

1.1

I_S

V_GS= 0V

TO-220 Outline

I_SM

V_SD

Repetitive, Pulse Width Limited by T_JM

I_F= 50A, V_GS= 0V, Note 1

t_rr

1.8

I_F= 110A, V_GS= 0V,

I_RM

Q_RM

-di/dt = 100A/s, V_R= 20V

EJECTOR

3X b

3X b2

ee11

Notes: 1. Pulse test, t  300s; duty cycle, d  2%.

1 - Gate

2,4 - Drain

3 - Source

2. On through-hole packages, R_DS(on)Kelvin test contact

location must be 5mm or less from the package body.

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.

IXYS MOSFETs and IGBTs are covered

by one or more of the following U.S. patents: 4,860,072 5,017,508

4,881,106 5,034,796

4,835,592 4,931,844

5,049,961

5,063,307

5,187,117

5,237,481

5,381,025

5,486,715

6,162,665

6,259,123B1

6,306,728B1

6,404,065B1

6,534,343

6,583,505

6,683,344

6,710,405B2 6,759,692

6,710,463

6,727,585

7,005,734B2 7,157,338B2

7,063,975B2

6,771,478B2 7,071,537

123 4 5 6

中文翻译

下载PDF

与IXTA220N04T2-TRL相关器件

型号	品牌	获取价格	描述	数据表
IXTA220N055T	IXYS	获取价格	Preliminary Technical Information TrenchMVTM Power MOSFET
IXTA220N075T7	IXYS	获取价格	MOSFET N-CH 75V 220A TO-263-7
IXTA230N04T4	LITTELFUSE	获取价格	Power Field-Effect Transistor,
IXTA230N075T2	IXYS	获取价格	N-Channel Enhancement Mode Avalanche Rated
IXTA230N075T2	LITTELFUSE	获取价格	这些器件具有40V至170V的漏极 - 源极电压额定值，并可提供高达600安培的高电流性能
IXTA230N075T2-7	IXYS	获取价格	Power Field-Effect Transistor, 230A I(D), 75V, 0.0042ohm, 1-Element, N-Channel, Silicon, M
IXTA230N075T2-7	LITTELFUSE	获取价格	Power Field-Effect Transistor,
IXTA240N055T	IXYS	获取价格	Power Field-Effect Transistor, 240A I(D), 55V, 0.0036ohm, 1-Element, N-Channel, Silicon, M
IXTA24N65X2	LITTELFUSE	获取价格	Power Field-Effect Transistor,
IXTA24N65X2	IXYS	获取价格	Power Field-Effect Transistor