Datasheet > IXTA1R6N100D2

IXTA1R6N100D2

更新时间： 2024-09-15 07:02:55

品牌	Logo	应用领域
IXYS		/
页数	文件大小	规格书
5页	178K
描述
Depletion Mode MOSFET

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

IXTA1R6N100D2 数据手册

Preliminary Technical Information

Depletion Mode

MOSFET

V_DSX= 1000V

I_D(on)> 1.6A

IXTY1R6N100D2

IXTA1R6N100D2

IXTP1R6N100D2

R_DS(on)≤ 10Ω

N-Channel

TO-252 (IXTY)

D (Tab)

Symbol

V_DSX

Test Conditions

Maximum Ratings

TO-263 AA (IXTA)

T_J= 25°C to 150°C

1000

V_GSX

V_GSM

Continuous

Transient

±20

±30

P_D

T_C= 25°C

100

D (Tab)

T_J

T_JM

T_stg

- 55 ... +150

150

- 55 ... +150

°C

TO-220AB (IXTP)

T_L

T_SOLD

1.6mm (0.062 in.) from Case for 10s

Plastic Body for 10s

300

260

°C

M_d

Mounting Torque (TO-220)

1.13 / 10

Nm/lb.in.

Weight

TO-252

TO-263

TO-220

0.35

2.50

3.00

D (Tab)

= Drain

G = Gate

S = Source

Tab = Drain

Features

• Normally ON Mode

• International Standard Packages

• Molding Epoxies Meet UL94V-0

Flammability Classification

Symbol

Test Conditions

Characteristic Values

(T_J= 25°C, Unless Otherwise Specified)

Min.

1000

- 2.5

Typ.

Max.

BV_DSX

V_GS(off)

I_GSX

V_GS= - 5V, I_D= 250μA

V_DS= 25V, I_D= 100μA

V_GS= ±20V, V_DS= 0V

V_DS= V_DSX, V_GS= - 5V

Advantages

- 4.5

• Easy to Mount

• Space Savings

• High Power Density

±100 nA

μA

25 μA

I_DSX(off)

T_J= 125°C

Applications

R_DS(on)

I_D(on)

V_GS= 0V, I_D= 0.8A, Note 1

V_GS= 0V, V_DS= 50V, Note 1

• Audio Amplifiers

• Start-Up Circuits

• Protection Circuits

• Ramp Generators

• Current Regulators

• Active Loads

1.6

DS100185A(12/09)

12 3 4 5

中文翻译

下载PDF

与IXTA1R6N100D2相关器件

型号	品牌	获取价格	描述	数据表
IXTA1R6N100D2HV	LITTELFUSE	获取价格	Power Field-Effect Transistor,
IXTA1R6N50D2	IXYS	获取价格	Depletion Mode MOSFET
IXTA1R6N50D2	LITTELFUSE	获取价格	不同于增强型MOSFET，这些耗尽型器件在“常开”模式下运行，因此栅极引出线处需要的开启电
IXTA200N055T2	IXYS	获取价格	DC to DC Synchronous Converter Design
IXTA200N055T2	LITTELFUSE	获取价格	这些器件具有40V至170V的漏极 - 源极电压额定值，并可提供高达600安培的高电流性能
IXTA200N055T2-7	LITTELFUSE	获取价格	这些器件具有40V至170V的漏极 - 源极电压额定值，并可提供高达600安培的高电流性能
IXTA200N055T2-TRL	IXYS	获取价格	Power Field-Effect Transistor,
IXTA200N075T	IXYS	获取价格	Power Field-Effect Transistor, 200A I(D), 75V, 0.005ohm, 1-Element, N-Channel, Silicon, Me
IXTA200N075T7	IXYS	获取价格	Power Field-Effect Transistor, 200A I(D), 75V, 0.005ohm, 1-Element, N-Channel, Silicon, Me
IXTA200N085T	IXYS	获取价格	N-Channel Enhancement Mode Avalanche Rated