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IXTA200N055T2-7 PDF预览

IXTA200N055T2-7

更新时间: 2024-03-25 22:01:57
品牌 Logo 应用领域
力特 - LITTELFUSE /
页数 文件大小 规格书
7页 168K
描述
这些器件具有40V至170V的漏极 - 源极电压额定值,并可提供高达600安培的高电流性能(Tc=@25oC)。 通过结合高电流额定值与紧凑的封装选择,这些尺寸更加小巧的器件能够控制更高的功率。

IXTA200N055T2-7 数据手册

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Preliminary Technical Information  
TrenchT2TM  
Power MOSFET  
VDSS = 55V  
ID25 = 200A  
RDS(on) 4.2mΩ  
IXTA200N055T2-7  
N-Channel Enhancement Mode  
Avalanche Rated  
TO-263 (7-lead)  
Symbol  
VDSS  
Test Conditions  
Maximum Ratings  
TJ = 25°C to 175°C  
TJ = 25°C to 175°C, RGS = 1MΩ  
55  
55  
V
V
1
VDGR  
7
VGSM  
Transient  
± 20  
V
(TAB)  
ID25  
ILRMS  
IDM  
TC = 25°C  
Lead Current Limit, RMS  
TC = 25°C, pulse width limited by TJM  
200  
160  
500  
A
A
A
Pins: 1 - Gate  
2, 3 - Source  
5,6,7 - Source  
TAB (8) - Drain  
IA  
TC = 25°C  
TC = 25°C  
100  
600  
A
EAS  
mJ  
PD  
TC = 25°C  
360  
W
Features  
TJ  
-55 ... +175  
175  
°C  
°C  
°C  
z International standard package  
z 175°C Operating Temperature  
z High current handling capability  
z Avalanche rated  
TJM  
Tstg  
-55 ... +175  
TL  
Tsold  
1.6mm (0.062in.) from case for 10s  
Plastic body for 10 seconds  
300  
260  
°C  
°C  
z
Low RDS(on)  
Weight  
3
g
Advantages  
z
Easy to mount  
Space savings  
High power density  
z
z
Applications  
z
Symbol  
Test Conditions  
Characteristic Values  
Automotive  
(TJ = 25°C unless otherwise specified)  
Min. Typ.  
Max.  
- Motor Drives  
- 12V Battery  
- ABS Systems  
DC/DC Converters and Off-line UPS  
Primary- Side Switch  
BVDSS  
VGS(th)  
IGSS  
VGS = 0V, ID = 250μA  
VDS = VGS, ID = 250μA  
VGS = ± 20V, VDS = 0V  
55  
V
V
z
2.0  
4.0  
z
±200 nA  
μA  
z
High Current Switching Applications  
IDSS  
VDS = VDSS  
VGS = 0V  
5
TJ = 150°C  
50 μA  
4.2 mΩ  
RDS(on)  
VGS = 10V, ID = 50A, Notes 1, 2  
3.3  
DS100081(11/08)  
© 2008 IXYS CORPORATION, All rights reserved  

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