Datasheet > IXST30N60B2D1

IXST30N60B2D1

更新时间： 2024-10-02 21:09:47

品牌	Logo	应用领域
力特 - LITTELFUSE		栅
页数	文件大小	规格书
7页	625K
描述
Insulated Gate Bipolar Transistor,

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中文翻译

获取价格

技术参数
数据手册

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IXST30N60B2D1 技术参数

生命周期：	Active	包装说明：	,
Reach Compliance Code：	unknown	Base Number Matches：	1

IXST30N60B2D1 数据手册

High Speed IGBT

with Diode

IXSH 30N60B2D1*

V_CES= 600 V

I_C25= 48 A

V_CE(sat)= 2.5 V

IXST 30N60B2D1

*ObsoletePartNumber

Short Circuit SOA Capability

PreliminaryDataSheet

Symbol

TestConditions

MaximumRatings

TO-247 (IXSH)

V_CES

V_CGR

T_J= 25°C to 150°C

600

T_J= 25°C to 150°C; R_GE= 1 MΩ

V_GES

V_GEM

Continuous

Transient

C (TAB)

I_C25

T_C= 25°C

I_C110

I_F(110)

I_CM

T_C= 110°C

TO-268 (IXST)

T_C= 25°C, 1 ms

SSOA

(RBSOA)

V_GE= 15 V, T_J= 125°C, R_G= 10Ω

I_CM= 48

@ 0.8 V_CES

µs

Clamped inductive load

C (TAB)

t_SC

(SCSOA)

V_GE= 15 V, V_CE= 360 V, T_J= 125°C

R_G= 10 Ω, non repetitive

P_C

T_C= 25°C

250

G = Gate

E = Emitter

C = Collector

TAB = Collector

T_J

-55 ... +150

150

°C

T_JM

T_stg

Features

-55 ... +150

• International standard package

• Guaranteed Short Circuit SOA

capability

Weight

TO-247

TO-268

• Low V_CE(sat)

Maximum lead temperature for soldering

1.6 mm (0.062 in.) from case for 10 s

Maximum tab temperature for soldering for 10s

300

260

°C

- for low on-state conduction losses

• Highcurrenthandlingcapability

• MOS Gate turn-on

- drivesimplicity

• Fast fall time for switching speeds

up to 20 kHz

Symbol

TestConditions

CharacteristicValues

(T_J= 25°C, unless otherwise specified)

min. typ. max.

Applications

• AC motor speed control

• Uninterruptiblepowersupplies(UPS)

• Welding

V_GE(th)

I_CES

I_C= 750 µA, V_CE= V_GE

4.0

7.0

Advantages

• High power density

V_CE= V_CES

V_GE= 0 V

150

µA

I_GES

V_CE= 0 V, V_GE

20 V

100

2.5

V_CE(sat)

I_C= 24A, V_GE= 15 V

DS99249(10/04)

12 3 4 5 6 7

中文翻译

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