Datasheet > IXTA05N100P

IXTA05N100P

更新时间： 2024-11-06 01:19:19

品牌	Logo	应用领域
IXYS		/
页数	文件大小	规格书
7页	283K
描述
Fast Intrinsic Diode

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中文翻译

获取价格

数据手册

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IXTA05N100P 数据手册

Polar^TM

Power MOSFET

V_DSS= 1000V

I_D25= 0.5A

R_DS(on) 30

IXTA05N100P

IXTP05N100P

N-Channel Enhancement Mode

Avalanche Rated

Fast Intrinsic Diode

TO-263 (IXTA)

Symbol

Test Conditions

Maximum Ratings

V_DSS

V_DGR

T_J= 25C to 150C

T_J= 25C to 150C, R_GS= 1M

1000

D (Tab)

V_GSS

V_GSM

Continuous

Transient

 20

 30

TO-220 (IXTP)

I_D25

I_DM

T_C= 25C

T_C= 25C, Pulse Width Limited by T_JM

0.5

1.25

I_A

E_AS

T_C= 25C

0.5

D (Tab)

dv/dt

P_D

I_S I_DM, V_DD V_DSS, T_J 150C

T_C= 25C

V/ns

G = Gate

= Drain

S = Source

Tab = Drain

T_J

T_JM

T_stg

-55 ... +150

150

-55 ... +150

C

T_L

T_SOLD

Maximum Lead Temperature for Soldering

Plastic Body for 10s

300

260

°C

Features

F_C

M_d

Mounting Force (TO-263)

Mounting Torque ( TO-220)

10..65 / 2.2..14.6

1.13 / 10

N/lb

Nm/lb.in

^International Standard Packages

^Avalanche Rated

^Fast Intrinsic Diode

Weight

TO-263

TO-220

2.5

3.0

^Dynamic dv/dt Rated

^Low Package Inductance

Advantages

^High Power Density

^Easy to Mount

Symbol

Test Conditions

Characteristic Values

(T_J= 25C, Unless Otherwise Specified)

Min.

1000

2.0

Typ.

Max.

^Space Savings

BV_DSS

V_GS(th)

I_GSS

V_GS= 0V, I_D= 250μA

V_DS= V_GS, I_D= 50μA

V_GS=  20V, V_DS= 0V

V_DS= V_DSS, V_GS= 0V

4.0

Applications

 50 nA

^Switch-Mode and Resonant-Mode

Power Supplies

I_DSS

10 A

750 μA

T_J= 125C

^DC-DC Converters

^Laser Drivers

R_DS(on)

V_GS= 10V, I_D= 0.5 • I_D25, Note 1



^AC and DC Motor Drives

^Robotics and Servo Controls

DS100272B(6/18)

12 3 4 5 6 7

中文翻译

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