5秒后页面跳转
IXTA100N04T2 PDF预览

IXTA100N04T2

更新时间: 2024-11-19 14:56:11
品牌 Logo 应用领域
力特 - LITTELFUSE /
页数 文件大小 规格书
7页 343K
描述
这些器件具有40V至170V的漏极 - 源极电压额定值,并可提供高达600安培的高电流性能(Tc=@25oC)。 通过结合高电流额定值与紧凑的封装选择,这些尺寸更加小巧的器件能够控制更高的功率。

IXTA100N04T2 数据手册

 浏览型号IXTA100N04T2的Datasheet PDF文件第2页浏览型号IXTA100N04T2的Datasheet PDF文件第3页浏览型号IXTA100N04T2的Datasheet PDF文件第4页浏览型号IXTA100N04T2的Datasheet PDF文件第5页浏览型号IXTA100N04T2的Datasheet PDF文件第6页浏览型号IXTA100N04T2的Datasheet PDF文件第7页 
TrenchT2TM  
Power MOSFET  
VDSS = 40V  
ID25 = 100A  
RDS(on) 7m  
IXTA100N04T2  
IXTP100N04T2  
N-Channel Enhancement Mode  
Avalanche Rated  
TO-263 (IXTA)  
G
S
D (Tab)  
TO-220 (IXTP)  
Symbol  
VDSS  
Test Conditions  
Maximum Ratings  
TJ = 25C to 175C  
40  
40  
V
V
VDGR  
TJ = 25C to 175C, RGS = 1M  
VGSM  
Transient  
20  
V
G
D
S
ID25  
IDM  
TC = 25C  
TC = 25C, Pulse Width Limited by TJM  
100  
300  
A
A
D (Tab)  
G = Gate  
S = Source Tab = Drain  
D
= Drain  
IA  
TC = 25C  
TC = 25C  
50  
A
EAS  
300  
mJ  
PD  
TC = 25C  
150  
W
Features  
TJ  
-55 ... +175  
175  
C  
C  
C  
TJM  
Tstg  
International Standard Packages  
Avalanche Rated  
Low Package Inductance  
-55 ... +175  
TL  
TSOLD  
Maximum Lead Temperature for Soldering  
1.6 mm (0.062in.) from Case for 10s  
300  
260  
°C  
°C  
Fast Intrinsic Rectifier  
175°C Operating Temperature  
High Current Handling Capability  
ROHS Compliant  
High Performance Trench  
FC  
Mounting Force (TO-263)  
Mounting Torque (TO-220)  
10..65 / 2.2..14.6  
1.13 / 10  
N/lb  
Nm/lb.in  
Md  
Weight  
TO-263  
TO-220  
2.5  
3.0  
g
g
Technology for extremely low RDS(on)  
Advantages  
High Power Density  
Easy to Mount  
Space Savings  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25C Unless Otherwise Specified)  
Min. Typ.  
Max.  
BVDSS  
VGS(th)  
IGSS  
VGS = 0V, ID = 250A  
VDS = VGS, ID = 250A  
VGS = 20V, VDS = 0V  
VDS = VDSS, VGS = 0V  
40  
V
V
Applications  
2.0  
4.0  
Automotive Engine Control  
Synchronous Buck Converter  
           100 nA  
A  
(for Notebook SystemPower &  
IDSS  
2
General Purpose Point & Load)  
DC/DC Converters  
High Current Switching Applications  
TJ = 150C  
VGS = 10V, ID = 25A, Notes 1 & 2  
50 A  
7 m  
RDS(on)  
Power Train Management  
Distributed Power Architecture  
  
DS99972A(7/18)  
© 2018 IXYS CORPORATION, All Rights Reserved  

与IXTA100N04T2相关器件

型号 品牌 获取价格 描述 数据表
IXTA100N15X4 LITTELFUSE

获取价格

这些器件采用电荷补偿原理和专有工艺技术开发,打造出电阻RDS(on)和栅极电荷Qg显著更低
IXTA102N15T IXYS

获取价格

Trench Gate Power MOSFET N-Channel Enhancement Mode Avalanche Rated
IXTA102N15T LITTELFUSE

获取价格

沟槽栅功率MOSFET适用于低电压/高电流应用,所需的RDS(on)极低,因此确保了非常低
IXTA102N15T-TRL IXYS

获取价格

Power Field-Effect Transistor,
IXTA10N60P LITTELFUSE

获取价格

Polar?标准功率MOSFET经过专门定制,可为设计人员提供在性能和成本之间取得最佳平衡
IXTA10P15T LITTELFUSE

获取价格

Trench P通道MOSFET非常适合“高压侧”开关应用,这些应用可采用简单的接地参考驱
IXTA10P50P IXYS

获取价格

PolarPTM Power MOSFETs P-Channel Enhancement Mode Avalanche Rated
IXTA10P50P LITTELFUSE

获取价格

Polar? P通道MOSFET采用我们的Polar技术平台制造,相比传统产品将通态电阻(
IXTA110N055P IXYS

获取价格

PolarHT Power MOSFET
IXTA110N055T IXYS

获取价格

Power Field-Effect Transistor, 110A I(D), 55V, 0.007ohm, 1-Element, N-Channel, Silicon, Me