Datasheet > IXTA08N100D2

IXTA08N100D2

更新时间： 2023-12-06 20:03:09

品牌	Logo	应用领域
力特 - LITTELFUSE		栅栅极
页数	文件大小	规格书
7页	304K
描述
不同于增强型MOSFET，这些耗尽型器件在“常开”模式下运行，因此栅极引出线处需要的开启电压为零。凭借高达1700V的阻断电压和较低的漏极到源极电阻，这些器件在持续“开启”的系统（例如紧急警报或

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数据手册

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IXTA08N100D2 数据手册

Depletion Mode

MOSFET

V_DSX= 1000V

I_D(on)> 800mA

IXTY08N100D2

IXTA08N100D2

IXTP08N100D2

R_DS(on) 21

N-Channel

TO-252 (IXTY)

D (Tab)

TO-263 AA (IXTA)

Symbol

V_DSX

Test Conditions

Maximum Ratings

T_J= 25C to 150C

1000

D (Tab)

V_GSX

V_GSM

Continuous

Transient

20

30

TO-220AB (IXTP)

P_D

T_C= 25C

T_J

T_JM

T_stg

- 55 ... +150

150

- 55 ... +150

C

T_L

T_SOLD

Maximum Lead Temperature for Soldering

1.6 mm (0.062in.) from Case for 10s

300

260

°C

D (Tab)

= Drain

M_d

Mounting Torque (TO-220)

1.13 / 10

Nm/lb.in.

G = Gate

S = Source

Tab = Drain

Weight

TO-252

TO-263

TO-220

0.35

2.50

3.00

Features

• Normally ON Mode

• International Standard Packages

• Molding Epoxies Meet UL94V-0

Flammability Classification

Symbol

Test Conditions

Characteristic Values

(T_J= 25C, Unless Otherwise Specified)

Min.

1000

- 2.0

Typ.

Max.

BV_DSX

V_GS(off)

I_GSX

V_GS= - 5V, I_D= 25A

V_DS= 25V, I_D= 25A

V_GS= 20V, V_DS= 0V

V_DS= V_DSX, V_GS= - 5V

Advantages

- 4.0

• Easy to Mount

• Space Savings

• High Power Density

50 nA

A

15 A

I_DSX(off)

T_J= 125C

Applications

R_DS(on)

I_D(on)

V_GS= 0V, I_D= 400mA, Note 1

V_GS= 0V, V_DS= 50V, Note 1



• Audio Amplifiers

• Start-up Circuits

• Protection Circuits

• Ramp Generators

• Current Regulators

• Active Loads

800

DS100182C(9/17)

12 3 4 5 6 7

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