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IXSX35N120BD1 PDF预览

IXSX35N120BD1

更新时间: 2024-02-16 18:58:08
品牌 Logo 应用领域
IXYS 二极管双极性晶体管高压
页数 文件大小 规格书
2页 119K
描述
HIGH VOLTAGE IGBT WITH DIODE

IXSX35N120BD1 数据手册

 浏览型号IXSX35N120BD1的Datasheet PDF文件第2页 
High Voltage  
IGBT with Diode  
IXSK 35N120BD1  
IXSX 35N120BD1  
VCES  
IC25  
= 1200 V  
= 70 A  
VCE(SAT) = 3.6 V  
Short Circuit SOA Capability  
Preliminary data sheet  
TO-264 AA  
(IXSK)  
Symbol  
TestConditions  
Maximum Ratings  
VCES  
VCGR  
TJ = 25°C to 150°C  
1200  
1200  
V
G
C
E
TJ = 25°C to 150°C; RGE = 1 MW  
V
VGES  
VGEM  
Continuous  
Transient  
±20  
±30  
V
V
PLUSTO-247TM  
(IXSX)  
IC25  
IC90  
ICM  
TC = 25°C  
70  
35  
A
A
A
TC = 90°C  
C (TAB)  
TC = 25°C, 1 ms  
140  
G
C
E
SSOA  
VGE = 15 V, TJ = 125°C, RG = 5 W  
ICM = 90  
A
(RBSOA)  
Clamped inductive load  
@ 0.8 VCES  
G = Gate,  
C = Collector,  
E=Emitter,  
TAB = Collector  
tSC  
(SCSOA)  
VGE = 15 V, VCE = 720 V, TJ = 125°C  
RG = 5 W, non repetitive  
10  
ms  
Features  
•Hole-less TO-247 package for clip  
mounting  
PC  
TC = 25°C  
IGBT  
Diode  
300  
190  
W
W
TJ  
-55 ... +150  
150  
°C  
°C  
°C  
•High frequency IGBT and anti-parallel  
FRED in one package  
•Low VCE(sat)  
- for minimum on-state conduction  
losses  
TJM  
Tstg  
-55 ... +150  
TL  
1.6 mm (0.063 in) from case for 10 s  
300  
°C  
•MOS Gate turn-on  
- drive simplicity  
Weight  
TO-264  
PLUS247  
10  
6
g
g
•Fast Recovery Epitaxial Diode (FRED)  
- soft recovery with low IRM  
Applications  
• AC motor speed control  
• DC servo and robot drives  
• DC choppers  
Symbol  
TestConditions  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
min. typ. max.  
• Uninterruptible power supplies (UPS)  
• Switch-mode and resonant-mode  
power supplies  
BVCES  
VGE(th)  
IC = 3 mA, VGE = 0 V  
1200  
3
V
IC = 250 mA, VCE = VGE  
6
V
ICES  

VCE = 0.8 • VCES  
VGE = 0 V  
1
3
mA  
mA  
Advantages  
TJ = 125°C  
• Space savings (two devices in one  
package)  
• Reduces assembly time and cost  
• High power density  
IGES  
VCE = 0 V, VGE = ±20 V  
±100  
nA  
V
VCE(sat)  
IC = IC90, VGE = 15 V  
3.6  
 Device must be heatsunk for high temperature measurements to avoid thermal runaway.  
IXYS reserves the right to change limits, test conditions and dimensions  
98733 (7/00)  
© 2000 IXYS All rights reserved  

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