Datasheet > 晶体管 > IGBT> IXGH56N60B3D1

IXGH56N60B3D1

更新时间： 2024-11-21 12:02:19

品牌	Logo	应用领域
IXYS		晶体晶体管功率控制瞄准线双极性晶体管栅局域网
页数	文件大小	规格书
4页	839K
描述
600V GenX3 IGBTs next generation 600V IGBTs for power conversion applications

阅读下载

中文翻译

获取价格

技术参数
数据手册

如果您发现信息不准确，欢迎纠错

IXGH56N60B3D1 技术参数

是否无铅：	不含铅	是否Rohs认证：	符合
生命周期：	Transferred	零件包装代码：	TO-247
包装说明：	FLANGE MOUNT, R-PSFM-T3	针数：	3
Reach Compliance Code：	compliant	风险等级：	5.64
Is Samacsys：	N	其他特性：	LOW CONDUCTION LOSS
外壳连接：	COLLECTOR	最大集电极电流 (IC)：	56 A
集电极-发射极最大电压：	600 V	配置：	SINGLE WITH BUILT-IN DIODE
最大降落时间（tf）：	165 ns	门极发射器阈值电压最大值：	5 V
门极-发射极最大电压：	20 V	JEDEC-95代码：	TO-247
JESD-30 代码：	R-PSFM-T3	JESD-609代码：	e1
元件数量：	1	端子数量：	3
最高工作温度：	150 °C	封装主体材料：	PLASTIC/EPOXY
封装形状：	RECTANGULAR	封装形式：	FLANGE MOUNT
峰值回流温度（摄氏度）：	NOT SPECIFIED	极性/信道类型：	N-CHANNEL
最大功率耗散 (Abs)：	330 W	认证状态：	Not Qualified
子类别：	Insulated Gate BIP Transistors	表面贴装：	NO
端子面层：	Tin/Silver/Copper (Sn/Ag/Cu)	端子形式：	THROUGH-HOLE
端子位置：	SINGLE	处于峰值回流温度下的最长时间：	NOT SPECIFIED
晶体管应用：	POWER CONTROL	晶体管元件材料：	SILICON
标称断开时间 (toff)：	385 ns	标称接通时间 (ton)：	63 ns
Base Number Matches：	1

IXGH56N60B3D1 数据手册

IXYS

POWER

ꢀ ꢁ w p r o D u c T B r I ꢁ f

Efficiency through T e chnology

600V GenX3™ IGBTs

ꢀꢁXT GꢁꢀꢁraTIoꢀ 600V IGBTꢂ for powꢁr coꢀVꢁrꢂIoꢀ applIcaTIoꢀꢂ

jaꢀuary 2009

oVꢁrVIꢁw

IXYS extends its GenX3^TMinsulated gate bipolar transistor (IGBT) product line to

600 volts. These new IGBTs are manufactured using IXYS’ state-of-the-art GenX3^TM

IGBT process and uꢀlize IXYS’ advanced Punch-Though (PT) technology, tailored

to provide higher surge current capabiliꢀes, lower saturaꢀon voltages, and lower

switching losses.

To accommodate opꢀmum part selecꢀon, designers have a choice in selecꢀng

between three sub-classes denoted A3, B3, and C3. These classiﬁcaꢀons allow

designers to “dial in” the best compromise between staꢀc (conducꢀon) and

dynamic (switching) losses, improving over-all system eﬃciency in a variety of

power conversion applicaꢀons by balancing criꢀcal requirements such as switching

frequency, eﬃciency, and cost structure. The A3-Class are opꢀmized for low

saturaꢀon voltage V(sat) and are well suited for applicaꢀons requiring switching

frequencies up to 5kHz. Similarly, the B3-Class oﬀers low saturaꢀon voltages, but

is opꢀmized to accommodate applicaꢀons that require “medium speed” switching

operaꢀon from 5kHz to 40kHz. The C3-Class is opꢀmized for “high speed” switching

operaꢀon from 40kHz to 100kHz and resonant switching operaꢀon of up to

400kHz.

IXYS 600V GenX3^TMIGBTs are oﬀered in various standard packages, including the

full gamut of surface mount and discrete packages with current raꢀngs from 36

amperes to 210 amperes. Furthermore, some devices will be oﬀered in PLUS and

ISOPLUS isolated packages, featuring UL recognized 2500V isolaꢀon and superior

thermal performance. Co-Packed variants of these new devices are available with

IXYS’ HiPerFRED^TMultra-fast recovery diodes providing excepꢀonal fast recovery

and soꢁ switching characterisꢀcs.

These IGBTs are designed to achieve the opꢀmal soluꢀon in applicaꢀons such as

power inverters, UPS, motor drives, SMPS, PFC, baꢂery chargers, welding machines,

lamp ballasts, inrush current protecꢀon circuits and DC choppers.

ꢃꢃꢃ.ixꢄs.ꢅꢆm

12 3 4

中文翻译

下载PDF

与IXGH56N60B3D1相关器件

型号	品牌	获取价格	描述	数据表
IXGH60N30C3	IXYS	获取价格	GenX3 300V IGBT
IXGH60N30C3	LITTELFUSE	获取价格	GenX3? IGBT采用我们完善的HDMOS IGBT工艺进行PT（打穿）生产。? 30
IXGH60N50	IXYS	获取价格	HIGH CURRENT MOSIGBT
IXGH60N50A	ETC	获取价格	TRANSISTOR \| IGBT \| N-CHAN \| 500V V(BR)CES \| 75A I(C) \| TO-247
IXGH60N60	IXYS	获取价格	Ultra-Low VCE(sat) IGBT
IXGH60N60A	ETC	获取价格	TRANSISTOR \| IGBT \| N-CHAN \| 600V V(BR)CES \| 75A I(C) \| TO-247
IXGH60N60B2	IXYS	获取价格	Optimized for 10-25 kHz hard switching and up to 100 KHz resonant switching
IXGH60N60C2	IXYS	获取价格	HiPerFASTTM IGBT C2-Class High Speed IGBTs
IXGH60N60C2	LITTELFUSE	获取价格	GenX3? IGBT采用我们完善的HDMOS IGBT工艺进行PT（打穿）生产。? 30
IXGH60N60C3	IXYS	获取价格	GenX3 600V IGBT

与IXGH56N60B3D1相关文章

解析光耦仿真器：升级光耦合器技术的必要性
2024-11-18

31
英伟达新一代Blackwell GPU过热问题致交付延迟
2024-11-18

22
国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
2024-11-14

51
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
2024-11-14

50

产品中心

服务支持

精选活动

关于我们

帮助中心

IXGH56N60B3D1

IXGH56N60B3D1 技术参数

IXGH56N60B3D1 数据手册

与IXGH56N60B3D1相关器件

与IXGH56N60B3D1相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

IXGH56N60B3D1

IXGH56N60B3D1 技术参数

IXGH56N60B3D1 数据手册

与IXGH56N60B3D1相关器件

与IXGH56N60B3D1相关文章

您还可以找

您在本页遇到什么问题？