Datasheet > IXGH60N60C3D1

IXGH60N60C3D1

更新时间： 2024-02-23 09:10:49

品牌	Logo	应用领域
力特 - LITTELFUSE		开关双极性晶体管
页数	文件大小	规格书
8页	310K
描述
GenX3? IGBT采用我们完善的HDMOS IGBT工艺进行PT（打穿）生产。? 300V? GenX3? IGBT提供高达150 kHz的开关性能，电流范围在42A至120A之间。由于兼具

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数据手册

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IXGH60N60C3D1 数据手册

GenX3^TM600V IGBTs IXGH60N60C3D1

V_CES= 600V

I_C110= 60A

V_CE(sat)≤ 2.5V

t_{fi (typ)}= 50ns

with Diode

IXGT60N60C3D1*

*Obsolete Part Number

High Speed PT IGBTs for

40-100kHz switching

TO-247 (IXGH)

Symbol

Test Conditions

Maximum Ratings

V_CES

V_CGR

T_J= 25°C to 150°C

600

T_J= 25°C to 150°C, R_GE= 1MΩ

C (Tab)

V_GES

V_GEM

Continuous

Transient

±20

±30

I_C25

I_C110

I_F110

T_C= 25°C, (Limited by Leads)

TO-268 (IXGT)

T_C= 110°C

I_CM

T_C= 25°C, 1ms

300

I_A

T_C= 25°C

C (Tab)

E_AS

400

SSOA

V_GE= 15V, T_VJ= 125°C, R_G= 3Ω

I_CM= 125

G = Gate

E = Emitter

= Collector

(RBSOA)

Clamped Inductive Load

V_CE≤ V_CES

Tab = Collector

P_C

T_C= 25°C

380

Features

T_J

T_JM

T_stg

-55 ... +150

150

°C

^zOptimized for Low Switching Losses

^zSquare RBSOA

^zHigh Avalanche Capability

^zAnti-Parallel Ultra Fast Diode

^zInternational Standard Packages

-55 ... +150

T_L

T_SOLD

Maximum Lead Temperature for Soldering

1.6 mm (0.062in.) from Case for 10s

300

260

°C

M_d

Mounting Torque (TO-247)

1.13/10

Nm/lb.in.

Weight

TO-268

TO-247

Advantages

^zHigh Power Density

^zLow Gate Drive Requirement

Symbol

Test Conditions

Characteristic Values

(T_J= 25°C, Unless Otherwise Specified)

Min.

Typ.

Max.

V_GE(th)

I_CES

I_C= 250µA, V_CE= V_GE

V_CE= V_CES,V_GE= 0V

3.0

5.5

Applications

50 µA

1 mA

T_J= 125°C

^zHigh Frequency Power Inverters

^zUPS

I_GES

V_CE= 0V, V_GE= ±20V

I_C= 40A, V_GE= 15V

±100 nA

^zMotor Drives

V_CE(sat)

2.2

1.7

2.5

^zSMPS

^zPFC Circuits

^zBattery Chargers

^zWelding Machines

^zLamp Ballasts

DS100009B(01/10)

12 3 4 5 6 7 8

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