Datasheet > IXGH60N60C2

IXGH60N60C2

更新时间： 2024-11-02 14:56:51

品牌	Logo	应用领域
力特 - LITTELFUSE		开关双极性晶体管
页数	文件大小	规格书
6页	659K
描述
GenX3? IGBT采用我们完善的HDMOS IGBT工艺进行PT（打穿）生产。? 300V? GenX3? IGBT提供高达150 kHz的开关性能，电流范围在42A至120A之间。由于兼具

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

IXGH60N60C2 数据手册

Advance Technical Data

HiPerFAST^TMIGBT

V_CES

I_C25

= 600 V

= 75 A

IXGH 60N60C2

IXGT 60N60C2

C2-Class High Speed IGBTs

V_CE(sat)= 2.5 V

t_fityp

= 35 ns

Symbol

Test Conditions

Maximum Ratings

TO-247 AD

(IXGH)

V_CES

V_CGR

T_J= 25°C to 150°C

T_J= 25°C to 150°C; R_GE= 1 MΩ

600

C (TAB)

V_GES

V_GEM

Continuous

Transient

TO-268

(IXGT)

I_C25

I_C110

I_CM

T_C= 25°C (limited by leads)

T_C= 110°C

T_C= 25°C, 1 ms

300

C (TAB)

SSOA

(RBSOA)

V_GE= 15 V, T_VJ= 125°C, R_G= 10 Ω

Clamped inductive load @ ≤ 600V

I_CM= 100

P_C

T_C= 25°C

480

G = Gate,

C = Collector,

T_J

T_JM

T_stg

-55 ... +150

150

-55 ... +150

°C

E = Emitter,

TAB = Collector

Features

Maximum lead temperature for soldering

1.6 mm (0.062 in.) from case for 10 s

300

°C

Very high frequency IGBT

Square RBSOA

M_d

Mounting torque (TO-247)

1.13/10Nm/lb.in.

High current handling capability

MOS Gate turn-on

Weight

TO-247 AD

TO-268

- drive simplicity

Applications

PFC circuits

Uninterruptible power supplies (UPS)

Symbol

Test Conditions

Characteristic Values

(T_J= 25°C, unless otherwise specified)

min. typ. max.

Switched-mode and resonant-mode

power supplies

AC motor speed control

DC servo and robot drives

V_GE(th)

I_CES

I_C= 250 µA, V_CE= V_GE

3.0

5.0

DC choppers

V_CE= V

T = 25°C

µA

V_GE= 0^CV^ES

T_J^J= 150°C

Advantages

I_GES

V_CE= 0 V, V_GE= 20 V

I_C= 50 A, V_GE= 15 V

100

2.5

High power density

V_CE(sat)

T = 25°C

2.1

1.8

Very fast switching speeds for high

T_J^J= 125°C

frequency applications

DS99043A(09/03)

12 3 4 5 6

中文翻译

下载PDF

与IXGH60N60C2相关器件

型号	品牌	获取价格	描述	数据表
IXGH60N60C3	IXYS	获取价格	GenX3 600V IGBT
IXGH60N60C3	LITTELFUSE	获取价格	GenX3? IGBT采用我们完善的HDMOS IGBT工艺进行PT（打穿）生产。? 30
IXGH60N60C3D1	IXYS	获取价格	600V GenX3 IGBTs next generation 600V IGBTs for power conversion applications
IXGH60N60C3D1	LITTELFUSE	获取价格	GenX3? IGBT采用我们完善的HDMOS IGBT工艺进行PT（打穿）生产。? 30
IXGH64N60A3	IXYS	获取价格	GenX3 600V IGBT
IXGH64N60A3	LITTELFUSE	获取价格	IXYS系列穿通型（PT）IGBT具有高增益、极快速切换和低传导损耗等优点。这些产品针对
IXGH64N60B3	IXYS	获取价格	GenX3 600V IGBT
IXGH64N60B3	LITTELFUSE	获取价格	GenX3? IGBT采用我们完善的HDMOS IGBT工艺进行PT（打穿）生产。? 30
IXGH6N170	IXYS	获取价格	High Voltage IGBT
IXGH6N170	LITTELFUSE	获取价格	功能与特色: 应用:?