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IXGH48N60C3D1 PDF预览

IXGH48N60C3D1

更新时间: 2024-11-18 11:14:11
品牌 Logo 应用领域
IXYS 二极管双极性晶体管
页数 文件大小 规格书
7页 202K
描述
GenX3 600V IGBT with Diode

IXGH48N60C3D1 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Transferred零件包装代码:TO-247
包装说明:PLASTIC PACKAGE-3针数:3
Reach Compliance Code:compliant风险等级:4.52
其他特性:AVALANCHE RATED外壳连接:COLLECTOR
最大集电极电流 (IC):75 A集电极-发射极最大电压:600 V
配置:SINGLE WITH BUILT-IN DIODE门极发射器阈值电压最大值:5.5 V
门极-发射极最大电压:20 VJEDEC-95代码:TO-247
JESD-30 代码:R-PSFM-T3JESD-609代码:e1
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):300 W认证状态:Not Qualified
子类别:Insulated Gate BIP Transistors表面贴装:NO
端子面层:Tin/Silver/Copper (Sn/Ag/Cu)端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:POWER CONTROL晶体管元件材料:SILICON
标称断开时间 (toff):187 ns标称接通时间 (ton):45 ns

IXGH48N60C3D1 数据手册

 浏览型号IXGH48N60C3D1的Datasheet PDF文件第2页浏览型号IXGH48N60C3D1的Datasheet PDF文件第3页浏览型号IXGH48N60C3D1的Datasheet PDF文件第4页浏览型号IXGH48N60C3D1的Datasheet PDF文件第5页浏览型号IXGH48N60C3D1的Datasheet PDF文件第6页浏览型号IXGH48N60C3D1的Datasheet PDF文件第7页 
GenX3TM 600V IGBT  
with Diode  
VCES  
IC110  
VCE(sat)  
tfi(typ)  
= 600V  
= 48A  
2.5V  
= 38ns  
IXGH48N60C3D1  
High speed PT IGBT for  
40-100kHz Switching  
TO-247  
Symbol  
VCES  
Test Conditions  
Maximum Ratings  
TJ = 25°C to 150°C  
600  
600  
V
V
VCGR  
TJ = 25°C to 150°C, RGE = 1MΩ  
G
C
VGES  
VGEM  
IC25  
Continuous  
±20  
±30  
75  
V
V
A
A
A
A
A
E
Transient  
( TAB )  
TC = 25°C (Limited by Leads)  
TC = 110°C  
IC110  
ID110  
ICM  
48  
G = Gate  
E = Emitter  
C
= Collector  
TC = 110°C  
30  
TAB = Collector  
TC = 25°C, 1ms  
TC = 25°C  
250  
30  
IA  
EAS  
TC = 25°C  
300  
mJ  
Features  
SSOA  
(RBSOA)  
PC  
VGE = 15V, TVJ = 125°C, RG = 3Ω  
Clamped Inductive Load  
TC = 25°C  
ICM = 100  
@VCE < 600  
300  
A
V
z Optimized for Low Switching Losses  
z Square RBSOA  
W
z Anti-Parallel Ultra Fast Diode  
z Fast Switching  
TJ  
-55 ... +150  
150  
°C  
°C  
°C  
TJM  
Tstg  
z Avalanche Rated  
-55 ... +150  
z International Standard Package  
TL  
1.6mm (0.062 in.) from Case for 10s  
Plastic Body for 10 Seconds  
300  
260  
°C  
°C  
TSOLD  
Advantages  
FC  
Mounting Torque  
1.13/10  
6
Nm/lb.in  
g
z High Power Density  
z Low Gate Drive Requirement  
Weight  
Applications  
z High Frequency Power Inverters  
z UPS  
Symbol  
Test Conditions  
Characteristic Values  
z Motor Drives  
(TJ = 25°C, Unless Otherwise Specified)  
VGE(th) IC = 250μA, VCE = VGE  
ICES  
Min.  
Typ.  
Max.  
z SMPS  
z PFC Circuits  
z Battery Chargers  
z Welding Machines  
z Lamp Ballasts  
3.0  
5.5  
V
VCE = VCES  
VGE = 0V  
300 μA  
1.75 mA  
TJ = 125°C  
IGES  
VCE = 0V, VGE = ±20V  
±100 nA  
VCE(sat)  
IC  
= 30A, VGE = 15V, Note 1  
TJ = 125°C  
2.3  
1.8  
2.5  
V
V
DS99945A(01/09)  
© 2009 IXYS CORPORATION, All rights reserved  

IXGH48N60C3D1 替代型号

型号 品牌 替代类型 描述 数据表
IRGP4078D-EPBF INFINEON

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