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IXGH50N120C3 PDF预览

IXGH50N120C3

更新时间: 2024-10-31 14:56:23
品牌 Logo 应用领域
力特 - LITTELFUSE 开关双极性晶体管
页数 文件大小 规格书
7页 197K
描述
GenX3? IGBT采用我们完善的HDMOS IGBT工艺进行PT(打穿)生产。? 300V? GenX3? IGBT提供高达150 kHz的开关性能,电流范围在42A至120A之间。 由于兼具

IXGH50N120C3 数据手册

 浏览型号IXGH50N120C3的Datasheet PDF文件第2页浏览型号IXGH50N120C3的Datasheet PDF文件第3页浏览型号IXGH50N120C3的Datasheet PDF文件第4页浏览型号IXGH50N120C3的Datasheet PDF文件第5页浏览型号IXGH50N120C3的Datasheet PDF文件第6页浏览型号IXGH50N120C3的Datasheet PDF文件第7页 
Preliminary Technical Information  
TM  
VCES = 1200V  
IC110 = 50A  
VCE(sat) 4.2V  
tfi(typ) = 64ns  
GenX3 1200V IGBT  
IXGH50N120C3  
High speed PT IGBTs  
for 20 - 50 kHz switching  
TO-247 (IXGH)  
Symbol  
Test Conditions  
Maximum Ratings  
VCES  
VCGR  
TJ = 25°C to 150°C  
TJ = 25°C to 150°C, RGE = 1MΩ  
1200  
1200  
V
V
VGES  
VGEM  
Continuous  
Transient  
±20  
±30  
V
V
G
TAB  
C
E
IC25  
IC110  
ICM  
TC = 25°C (limited by leads)  
TC = 110°C  
TC = 25°C, 1ms  
75  
50  
A
A
A
G = Gate  
E = Emitter  
C
= Collector  
250  
TAB = Collector  
IA  
EAS  
TC = 25°C  
TC = 25°C  
40  
750  
A
mJ  
SSOA  
VGE= 15V, TJ = 125°C, RG = 3Ω  
Clamped inductive load @VCE1200V  
ICM = 100  
A
Features  
(RBSOA)  
z International standard packages:  
JEDEC TO-247AD  
PC  
TC = 25°C  
460  
W
z IGBT and anti-parallel FRED in one  
package  
TJ  
-55 ... +150  
150  
°C  
°C  
°C  
TJM  
Tstg  
z MOS Gate turn-on  
- drive simplicity  
-55 ... +150  
Md  
Mounting torque  
1.13 / 10  
Nm/lb.in.  
TL  
Maximum lead temperature for soldering  
1.6mm (0.062 in.) from case for 10s  
300  
260  
°C  
°C  
Applications  
TSOLD  
z
AC motor speed control  
DC servo and robot drives  
DC choppers  
Uninterruptible power supplies (UPS)  
Weight  
6
g
z
z
z
z
Symbol  
Test Conditions  
Characteristic Values  
Min. Typ.  
Switch-mode and resonant-mode  
(TJ = 25°C, unless otherwise specified)  
Max.  
power supplies  
BVCES  
VGE(th)  
IC = 250μA, VGE = 0V  
IC = 250μA, VCE = VGE  
1200  
3.0  
V
V
5.0  
ICES  
VCE = VCES  
VGE = 0V  
100 μA  
TJ = 125°C  
TJ = 125°C  
2
±100  
4.2  
mA  
IGES  
VCE = 0V, VGE = ±20V  
nA  
VCE(sat)  
IC  
= 40A, VGE = 15V, Note 1  
V
V
2.6  
DS99996(06/08)  
© 2008 IXYS CORPORATION, All rights reserved  

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