5秒后页面跳转
IXGH50N90B2D1 PDF预览

IXGH50N90B2D1

更新时间: 2024-11-02 14:56:19
品牌 Logo 应用领域
力特 - LITTELFUSE 开关双极性晶体管
页数 文件大小 规格书
8页 267K
描述
GenX3? IGBT采用我们完善的HDMOS IGBT工艺进行PT(打穿)生产。? 300V? GenX3? IGBT提供高达150 kHz的开关性能,电流范围在42A至120A之间。 由于兼具

IXGH50N90B2D1 技术参数

生命周期:Active包装说明:,
Reach Compliance Code:unknown风险等级:5.2
Base Number Matches:1

IXGH50N90B2D1 数据手册

 浏览型号IXGH50N90B2D1的Datasheet PDF文件第2页浏览型号IXGH50N90B2D1的Datasheet PDF文件第3页浏览型号IXGH50N90B2D1的Datasheet PDF文件第4页浏览型号IXGH50N90B2D1的Datasheet PDF文件第5页浏览型号IXGH50N90B2D1的Datasheet PDF文件第6页浏览型号IXGH50N90B2D1的Datasheet PDF文件第7页 
HiPerFASTTM  
IGBT with Fast  
Diode  
IXGH 50N90B2D1  
IXGK 50N90B2D1  
IXGX 50N90B2D1  
VCES  
IC25  
= 900 V  
= 75 A  
VCE(sat) = 2.7 V  
tfityp  
= 200 ns  
B2-Class High Speed IGBT  
with Fast Diode  
PreliminaryDataSheet  
Symbol  
Test Conditions  
Maximum Ratings  
TO-247 (IXGH)  
VCES  
VCGR  
TJ = 25°C to 150°C  
900  
900  
V
TJ = 25°C to 150°C; RGE = 1 MΩ  
V
TAB)  
VGES  
VGEM  
Continuous  
Transient  
± 20  
± 30  
V
V
G
C
E
IC25  
IC110  
ICM  
TC = 25°C (limited by leads)  
TC = 110°C  
75  
50  
A
A
A
PLUS247 (IXGX)  
TC = 25°C, 1 ms  
200  
SSOA  
VGE = 15 V, TVJ = 125°C, RG = 10 Ω  
Clamped inductive load @ 600V  
ICM = 100  
A
TAB)  
(RBSOA)  
G
C
E
PC  
TC = 25°C  
400  
W
TJ  
-55 ... +150  
150  
°C  
°C  
°C  
TO-264 (IXGK)  
TJM  
Tstg  
-55 ... +150  
Maximum lead temperature for soldering  
1.6 mm (0.062 in.) from case for 10 s  
300  
°C  
G
D
S
C (TAB)  
Md  
Mounting torque (TO-247, TO-264)  
1.13/10Nm/lb.in.  
FC  
Mounting force (PLUS247)  
20..120 / 4.5..25  
N/lb  
G = Gate  
E=Emitter  
C = Collector  
TAB = Collector  
Weight  
TO-247  
TO-264  
PLUS247  
6
10  
6
g
g
g
Features  
High frequency IGBT  
High current handling capability  
MOS Gate turn-on  
Symbol  
TestConditions  
Characteristic Values  
min. typ. max.  
- drive simplicity  
(TJ = 25°C unless otherwise specified)  
Applications  
VGE(th)  
IC = 250 μA, VCE = VGE  
3.0  
5.0  
V
PFC circuits  
Uninterruptible power supplies (UPS)  
Switched-mode and resonant-mode  
ICES  
VCE = VCES  
VGE = 0 V  
50  
1
μA  
mA  
TJ = 150°C  
TJ = 125°C  
power supplies  
AC motor speed control  
DC servo and robot drives  
DC choppers  
IGES  
VCE = 0 V, VGE = ± 20 V  
± 100  
nA  
VCE(sat)  
IC = IC110, VGE = 15 V, Note 1  
2.2  
2.7  
V
V
Advantages  
High power density  
Very fast switching speeds for high  
frequency applications  
DS99393(01/06)  
© 2006 IXYS All rights reserved  

与IXGH50N90B2D1相关器件

型号 品牌 获取价格 描述 数据表
IXGH56N60A3 IXYS

获取价格

GenX3 600V IGBT
IXGH56N60A3 LITTELFUSE

获取价格

IXYS系列穿通型(PT)IGBT具有高增益、极快速切换和低传导损耗等优点。 这些产品针对
IXGH56N60B3 IXYS

获取价格

GenX3 600V IGBT
IXGH56N60B3 LITTELFUSE

获取价格

GenX3? IGBT采用我们完善的HDMOS IGBT工艺进行PT(打穿)生产。? 30
IXGH56N60B3D1 IXYS

获取价格

600V GenX3 IGBTs next generation 600V IGBTs for power conversion applications
IXGH56N60B3D1 LITTELFUSE

获取价格

GenX3? IGBT采用我们完善的HDMOS IGBT工艺进行PT(打穿)生产。? 30
IXGH60N30C3 IXYS

获取价格

GenX3 300V IGBT
IXGH60N30C3 LITTELFUSE

获取价格

GenX3? IGBT采用我们完善的HDMOS IGBT工艺进行PT(打穿)生产。? 30
IXGH60N50 IXYS

获取价格

HIGH CURRENT MOSIGBT
IXGH60N50A ETC

获取价格

TRANSISTOR | IGBT | N-CHAN | 500V V(BR)CES | 75A I(C) | TO-247