Datasheet > IXGH50N120C3

IXGH50N120C3

更新时间： 2024-11-18 11:14:11

品牌	Logo	应用领域
IXYS		双极性晶体管
页数	文件大小	规格书
6页	170K
描述
GenX3 1200V IGBT

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中文翻译

获取价格

数据手册

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IXGH50N120C3 数据手册

Preliminary Technical Information

V_CES= 1200V

I_C110= 50A

V_CE(sat)≤ 4.2V

t_fi(typ)= 64ns

GenX3 1200V IGBT

IXGH50N120C3

High speed PT IGBTs

for 20 - 50 kHz switching

TO-247 (IXGH)

Symbol

Test Conditions

Maximum Ratings

V_CES

V_CGR

T_J= 25°C to 150°C

T_J= 25°C to 150°C, R_GE= 1MΩ

1200

V_GES

V_GEM

Continuous

Transient

±20

±30

TAB

I_C25

I_C110

I_CM

T_C= 25°C (limited by leads)

T_C= 110°C

T_C= 25°C, 1ms

G = Gate

E = Emitter

= Collector

250

TAB = Collector

I_A

E_AS

T_C= 25°C

750

SSOA

V_GE= 15V, T_J= 125°C, R_G= 3Ω

Clamped inductive load @V_CE≤ 1200V

I_CM= 100

Features

(RBSOA)

^zInternational standard packages:

JEDEC TO-247AD

P_C

T_C= 25°C

460

^zIGBT and anti-parallel FRED in one

package

T_J

-55 ... +150

150

°C

T_JM

T_stg

^zMOS Gate turn-on

- drive simplicity

-55 ... +150

M_d

Mounting torque

1.13 / 10

Nm/lb.in.

T_L

Maximum lead temperature for soldering

1.6mm (0.062 in.) from case for 10s

300

260

°C

Applications

T_SOLD

AC motor speed control

DC servo and robot drives

DC choppers

Uninterruptible power supplies (UPS)

Weight

Symbol

Test Conditions

Characteristic Values

Min. Typ.

Switch-mode and resonant-mode

(T_J= 25°C, unless otherwise specified)

Max.

power supplies

BV_CES

V_GE(th)

I_C= 250μA, V_GE= 0V

I_C= 250μA, V_CE= V_GE

1200

3.0

5.0

I_CES

V_CE= V_CES

V_GE= 0V

100 μA

T_J= 125°C

±100

4.2

I_GES

V_CE= 0V, V_GE= ±20V

V_CE(sat)

I_C

= 40A, V_GE= 15V, Note 1

2.6

DS99996(06/08)

12 3 4 5 6

中文翻译

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