5秒后页面跳转
IXGH50N60A PDF预览

IXGH50N60A

更新时间: 2024-11-17 23:15:07
品牌 Logo 应用领域
IXYS 双极性晶体管
页数 文件大小 规格书
4页 96K
描述
HiPerFAST IGBT - Surface Mountable

IXGH50N60A 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete零件包装代码:TO-247AD
包装说明:FLANGE MOUNT, R-PSFM-T3针数:3
Reach Compliance Code:compliant风险等级:5.81
其他特性:FAST外壳连接:COLLECTOR
最大集电极电流 (IC):75 A集电极-发射极最大电压:600 V
配置:SINGLE最大降落时间(tf):200 ns
门极发射器阈值电压最大值:5 V门极-发射极最大电压:20 V
JEDEC-95代码:TO-247ADJESD-30 代码:R-PSFM-T3
JESD-609代码:e1元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL功耗环境最大值:250 W
最大功率耗散 (Abs):250 W认证状态:Not Qualified
子类别:Insulated Gate BIP Transistors表面贴装:NO
端子面层:Tin/Silver/Copper (Sn/Ag/Cu)端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:MOTOR CONTROL晶体管元件材料:SILICON
标称断开时间 (toff):880 ns标称接通时间 (ton):290 ns
VCEsat-Max:2.7 VBase Number Matches:1

IXGH50N60A 数据手册

 浏览型号IXGH50N60A的Datasheet PDF文件第2页浏览型号IXGH50N60A的Datasheet PDF文件第3页浏览型号IXGH50N60A的Datasheet PDF文件第4页 
HiPerFASTTM IGBT  
SurfaceMountable  
IXGH50N60A  
IXGH50N60AS  
VCES = 600 V  
IC25  
=
75 A  
VCE(sat) = 2.7 V  
tfi  
= 275 ns  
TO-247 SMD  
(50N60AS)  
Symbol  
TestConditions  
Maximum Ratings  
VCES  
VCGR  
TJ = 25°C to 150°C  
600  
600  
V
V
TJ = 25°C to 150°C; RGE = 1 MΩ  
TAB)  
G
VGES  
VGEM  
Continuous  
Transient  
±20  
±30  
V
V
E
IC25  
IC90  
ICM  
TC = 25°C  
75  
50  
A
A
A
TO-247 AD  
(50N60A)  
TC = 90°C  
TC = 25°C, 1 ms  
200  
SSOA  
VGE= 15 V, TVJ = 125°C, RG = 10 Ω  
ICM = 100  
A
(RBSOA)  
Clamped inductive load, L = 30 µH  
@ 0.8 VCES  
C (TAB)  
G
PC  
TC = 25°C  
250  
W
C
E
TJ  
-55 ... +150  
150  
°C  
°C  
°C  
G = Gate,  
E = Emitter,  
C = Collector,  
TAB = Collector  
TJM  
Tstg  
-55 ... +150  
Maximum Lead and Tab temperature for soldering  
1.6 mm (0.062 in.) from case for 10 s  
300  
°C  
Features  
l
International standard packages  
JEDEC TO-247 SMD surface  
mountable and JEDEC TO-247 AD  
High frequency IGBT  
High current handling capability  
2nd generation HDMOSTM process  
MOS Gate turn-on  
Md  
Mounting torque, TO-247 AD  
1.13/10 Nm/lb.in.  
Weight  
TO-247 SMD  
TO-247 AD  
4
6
g
g
l
l
l
l
- drive simplicity  
Applications  
l
AC motor speed control  
DC servo and robot drives  
DC choppers  
Uninterruptible power supplies (UPS)  
Symbol  
TestConditions  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
min. typ. max.  
l
l
l
l
Switch-mode and resonant-mode  
BVCES  
VGE(th)  
IC = 250 µA, VGE = 0 V  
IC = 250 µA, VCE = VGE  
600  
2.5  
V
V
power supplies  
5
Advantages  
ICES  
VCE = 0.8 • VCES  
VGE = 0 V  
TJ = 25°C  
TJ = 125°C  
200 µA  
mA  
l
High power density  
Suitable for surface mounting  
Switching speed for high frequency  
1
l
l
IGES  
VCE = 0 V, VGE = ±20 V  
±100 nA  
2.7  
applications  
Easy to mount with 1 screw, TO-247  
l
VCE(sat)  
IC = IC90, VGE = 15 V  
V
(insulated mounting screw hole)  
© 1996 IXYS All rights reserved  
92797H(9/96)  

IXGH50N60A 替代型号

型号 品牌 替代类型 描述 数据表
IXGH56N60A3 IXYS

类似代替

GenX3 600V IGBT

与IXGH50N60A相关器件

型号 品牌 获取价格 描述 数据表
IXGH50N60AS IXYS

获取价格

HiPerFAST IGBT - Surface Mountable
IXGH50N60B IXYS

获取价格

HiPerFAST IGBT
IXGH50N60B2 IXYS

获取价格

HiPerFASTTM IGBT B2-Class High Speed IGBTs
IXGH50N60B4 IXYS

获取价格

High-Gain IGBTs
IXGH50N60B4D1 IXYS

获取价格

Insulated Gate Bipolar Transistor, 100A I(C), 600V V(BR)CES, N-Channel, TO-247AD, TO-247,
IXGH50N60BS ETC

获取价格

TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 75A I(C) | TO-247SMD
IXGH50N60C2 IXYS

获取价格

HiPerFAST IGBT C2-Class High Speed IGBTs
IXGH50N60C4 IXYS

获取价格

High-Gain IGBTs
IXGH50N90B2 IXYS

获取价格

HiPerFAST IGBT B2-Class High Speed IGBTs
IXGH50N90B2 LITTELFUSE

获取价格

GenX3? IGBT采用我们完善的HDMOS IGBT工艺进行PT(打穿)生产。? 30