Datasheet > IXGH56N60B3

IXGH56N60B3

更新时间： 2024-11-07 14:56:59

品牌	Logo	应用领域
力特 - LITTELFUSE		开关双极性晶体管
页数	文件大小	规格书
7页	914K
描述
GenX3? IGBT采用我们完善的HDMOS IGBT工艺进行PT（打穿）生产。? 300V? GenX3? IGBT提供高达150 kHz的开关性能，电流范围在42A至120A之间。由于兼具

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中文翻译

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技术参数
数据手册

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IXGH56N60B3 技术参数

生命周期：	Obsolete	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.64
Base Number Matches：	1

IXGH56N60B3 数据手册

Advance Technical Information

GenX3^TM600V IGBT

V_CES= 600V

I_C110= 56A

V_CE(sat)≤ 1.80V

IXGH56N60B3*

*Obsolete Part Number

Medium-Speed Low Vsat PT

IGBT 5 - 40 kHz Switching

TO-247

Symbol

Test Conditions

Maximum Ratings

V_CES

V_CGR

T_C= 25°C to 150°C

600

T_J= 25°C to 150°C, R_GE= 1MΩ

(TAB)

V_GES

Continuous

Transient

± 20

± 30

V_GEM

G = Gate

E = Emitter

= Collector

I_C25

I_C110

T_C= 25°C (Chip Capability)

T_C= 110°C

130

TAB = Collector

I_CM

T_C= 25°C, 1ms

350

SSOA

(RBSOA)

V_GE= 15V, T_VJ= 125°C, R_G= 5Ω

Clamped Inductive Load

= 150

V^C_C^M_E≤ V_CES

Features

P_d

T_C= 25°C

330

^zOptimized for Low Conduction and

Switching Losses

T_J

T_JM

T_stg

- 55 ... +150

150

°C

^zSquare RBSOA

- 40 ... +150

^zInternational Standard Package

T_L

T_SOLD

1.6mm (0.062 in.) from Case for 10s

Plastic Body for 10 seconds

300

260

°C

Advantages

M_d

Mounting torque

1.13/10

Nm/lb.in.

^zHigh Power Density

^zLow Gate Drive Requirement

Weight

Applications

^zPower Inverters

^zUPS

Symbol

Test Conditions

Characteristic Values

^zMotor Drives

^zSMPS

(T_J= 25°C, Unless Otherwise Specified)

Min.

600

3.0

Typ.

Max.

BV_CES

V_GE(th)

I_CES

I_C= 250μA, V_CE= 0V

I_C= 250μA, V_CE= V_GE

V_CE= V_CES,V_GE= 0V

^zPFC Circuits

^zBattery Chargers

^zWelding Machines

^zLamp Ballasts

5.0

50 μA

500 μA

T_J= 125°C

I_GES

V_CE= 0V, V_GE= ±20V

±100 nA

V_CE(sat)

I_C= 44A, V_GE= 15V, Note 1

1.49

1.47

1.80

DS100175(08/09)

12 3 4 5 6 7

中文翻译

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与IXGH56N60B3相关器件

型号	品牌	获取价格	描述	数据表
IXGH56N60B3D1	IXYS	获取价格	600V GenX3 IGBTs next generation 600V IGBTs for power conversion applications
IXGH56N60B3D1	LITTELFUSE	获取价格	GenX3? IGBT采用我们完善的HDMOS IGBT工艺进行PT（打穿）生产。? 30
IXGH60N30C3	IXYS	获取价格	GenX3 300V IGBT
IXGH60N30C3	LITTELFUSE	获取价格	GenX3? IGBT采用我们完善的HDMOS IGBT工艺进行PT（打穿）生产。? 30
IXGH60N50	IXYS	获取价格	HIGH CURRENT MOSIGBT
IXGH60N50A	ETC	获取价格	TRANSISTOR \| IGBT \| N-CHAN \| 500V V(BR)CES \| 75A I(C) \| TO-247
IXGH60N60	IXYS	获取价格	Ultra-Low VCE(sat) IGBT
IXGH60N60A	ETC	获取价格	TRANSISTOR \| IGBT \| N-CHAN \| 600V V(BR)CES \| 75A I(C) \| TO-247
IXGH60N60B2	IXYS	获取价格	Optimized for 10-25 kHz hard switching and up to 100 KHz resonant switching
IXGH60N60C2	IXYS	获取价格	HiPerFASTTM IGBT C2-Class High Speed IGBTs