Datasheet > IRGP4078D-EPBF

IRGP4078D-EPBF

更新时间： 2024-10-02 01:17:15

品牌	Logo	应用领域
英飞凌 - INFINEON		开关
页数	文件大小	规格书
11页	828K
描述
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODE FOR INDUCTION HEATING AND SOFT SWITCHING APPLICATIONS

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中文翻译

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数据手册
替代型号

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IRGP4078D-EPBF 数据手册

IRGP4078DPbF

IRGP4078D-EP

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODE

FOR INDUCTION HEATING AND SOFT SWITCHING APPLICATIONS

V_CES= 600V

Features

_NOMINAL= 50A

• Low V_{CE (ON)}Trench IGBT Technology

• Low Switching Losses

• Maximum Junction temperature 175°C

• 5 µs short circuit SOA

T_J(MAX)= 175°C

_CE(ON)typ. = 1.9V

• Square RBSOA

n-channel

• 100% of the parts tested for I_LM

• Positive V_{CE (ON)}Temperature co-efficient

• Ultra-low VF Hyperfast Diode

• Tight parameter distribution

Benefits

• Device optimized for induction heating and soft switching

applications

• High Efficiency due to Low V_CE(ON), Low Switching Losses

and Ultra-low V_F

• Rugged transient Performance for increased reliability

• Excellent Current sharing in parallel operation

• Low EMI

IRGP4078DPbF

TO-247AC

IRGP4078D-EP

TO-247AD

Gate

Collector

Emitter

Base part number

Package Type

Standard Pack

Form

Orderable Part Number

Quantity

IRGP4078DPbF

IRGP4078D-EPbF

TO-247AC

TO-247AD

Tube

IRGP4078DPbF

IRGP4078D-EPbF

Absolute Maximum Ratings

Parameter

Max.

Units

V_CES

Collector-to-Emitter Voltage

600

I_C@ T_C= 25°C Continuous Collector Current

I_C@ T_C= 100°C Continuous Collector Current

I_CM

I_LM

Pulse Collector Current, V_GE= 15V

Clamped Inductive Load Current, V_GE= 20V 

150

200

I_F@ T_C= 25°C Diode Continuous Forward Current

I_F@ T_C= 100°C Diode Continuous Forward Current

_FSM@ T_C= 25°C Diode Non Repetitive Peak Surge Current @ T_J= 25°C

_FRM@Tc = 100°C Diode Repetitive Peak Forward Current at tp=10µs 

120

V_GE

Continuous Gate-to-Emitter Voltage

Transient Gate-to-Emitter Voltage

±20

±30

278

139

P_D@ T_C= 25°C Maximum Power Dissipation

P_D@ T_C= 100°C Maximum Power Dissipation

T_J

Operating Junction and

-55 to +175

T_STG

Storage Temperature Range

Soldering Temperature, for 10 sec.

°C

300

(0.063 in.(1.6mm) from case)

Mounting Torque, 6-32 or M3 Screw

10 lbf·in (1.1 N·m)

www.irf.com

January 8, 2013

12 3 4 5 6 7...11

中文翻译

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IRGP4078D-EPBF 替代型号

型号	品牌	替代类型	描述	数据表
IXGH48N60C3D1	IXYS	功能相似	GenX3 600V IGBT with Diode

与IRGP4078D-EPBF相关器件

型号	品牌	获取价格	描述	数据表
IRGP4078DPBF	INFINEON	获取价格	INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODE FOR INDUCTION HEATING AND SOFT S
IRGP4078DPBF_15	INFINEON	获取价格	Low Switching Losses
IRGP4085DPBF	INFINEON	获取价格	PDP TRENCH IGBT
IRGP4086PBF	INFINEON	获取价格	PDP TRENCH IGBT
IRGP420U	INFINEON	获取价格	INSULATED GATE BIPOLAR TRANSISTOR(Vces=500V, @Vge=15V, Ic=7.5A)
IRGP420U-E	INFINEON	获取价格	暂无描述
IRGP4262D-EPBF	INFINEON	获取价格	Insulated Gate Bipolar Transistor
IRGP4262DPBF	INFINEON	获取价格	Insulated Gate Bipolar Transistor
IRGP4263D-EPBF	INFINEON	获取价格	Insulated Gate Bipolar Transistor, 90A I(C), 650V V(BR)CES, N-Channel,
IRGP4263DPBF	INFINEON	获取价格	Insulated Gate Bipolar Transistor, 90A I(C), 650V V(BR)CES, N-Channel,

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