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IXGH12N90C PDF预览

IXGH12N90C

更新时间: 2024-11-06 03:14:35
品牌 Logo 应用领域
IXYS 晶体晶体管电动机控制双极性晶体管局域网
页数 文件大小 规格书
2页 37K
描述
HiPerFAST IGBT Lightspeed Series

IXGH12N90C 数据手册

 浏览型号IXGH12N90C的Datasheet PDF文件第2页 
Advanced Technical Information  
HiPerFASTTM IGBT  
IXGH 12N90C VCES = 900 V  
LightspeedTM Series  
IC25  
= 24 A  
V
CES(sat) = 3.0 V  
tfi(typ) = 70 ns  
Symbol  
TestConditions  
MaximumRatings  
TO-247  
VCES  
VCGR  
TJ = 25°C to 150°C  
900  
900  
V
V
TJ = 25°C to 150°C; RGE = 1 MW  
VGES  
VGEM  
Continuous  
Transient  
±20  
±30  
V
V
TAB)  
G
C
IC25  
IC90  
ICM  
TC = 25°C  
24  
12  
48  
A
A
A
E
TC = 90°C  
G = Gate,  
E = Emitter,  
C = Collector,  
TAB = Collector  
TC = 25°C, 1 ms  
SSOA  
(RBSOA)  
VGE= 15 V, TVJ = 125°C, RG = 33 W  
Clamped inductive load, L = 300 mH  
ICM = 24  
@ 0.8 VCES  
A
PC  
TC = 25°C  
100  
W
TJ  
-55 ... +150  
150  
°C  
°C  
°C  
TJM  
Tstg  
-55 ... +150  
Features  
Md  
Mounting torque with screw M3  
Mounting torque with screw M3.5  
0.45/4 Nm/lb.in.  
0.55/5 Nm/lb.in.  
• Very high frequency IGBT  
• New generation HDMOSTM process  
• Internationalstandardpackage  
JEDEC TO-247  
Maximumleadtemperatureforsoldering  
1.6 mm (0.062 in.) from case for 10 s  
300  
°C  
Weight  
6
g
• Highpeakcurrenthandlingcapability  
Applications  
Symbol  
TestConditions  
CharacteristicValues  
(TJ = 25°C, unless otherwise specified)  
min. typ. max.  
• PFC circuit  
• AC motor speed control  
• DC servo and robot drives  
• Switch-modeandresonant-mode  
powersupplies  
BVCES  
VGE(th)  
IC = 250 mA, VGE = 0 V  
IC = 250 mA, VGE = VGE  
600  
2.5  
V
V
• Highpoweraudioamplifiers  
5.0  
ICES  
VCE = VCES  
VGE = 0 V  
TJ = 25°C  
TJ = 125°C  
100 mA  
1.5 mA  
Advantages  
IGES  
VCE = 0 V, VGE = ±20 V  
±100 nA  
• Fast switching speed  
• High power density  
VCE(sat)  
IC = ICE90, VGE = 15 V  
3.0  
V
IXYS reserves the right to change limits, test conditions, and dimensions.  
© 2000 IXYS All rights reserved  
98582(1/99)  
1 - 2  

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