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IXGH16N170A PDF预览

IXGH16N170A

更新时间: 2024-09-16 14:56:23
品牌 Logo 应用领域
力特 - LITTELFUSE /
页数 文件大小 规格书
8页 242K
描述
功能与特色: 应用:?

IXGH16N170A 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:FLANGE MOUNT, R-PSFM-T3Reach Compliance Code:compliant
风险等级:5.66Is Samacsys:N
外壳连接:COLLECTOR最大集电极电流 (IC):16 A
集电极-发射极最大电压:1700 V配置:SINGLE
最大降落时间(tf):150 ns门极发射器阈值电压最大值:5 V
门极-发射极最大电压:20 VJEDEC-95代码:TO-247AD
JESD-30 代码:R-PSFM-T3JESD-609代码:e1
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):190 W认证状态:Not Qualified
子类别:Insulated Gate BIP Transistors表面贴装:NO
端子面层:Tin/Silver/Copper (Sn/Ag/Cu)端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:MOTOR CONTROL晶体管元件材料:SILICON
标称断开时间 (toff):330 ns标称接通时间 (ton):97 ns
Base Number Matches:1

IXGH16N170A 数据手册

 浏览型号IXGH16N170A的Datasheet PDF文件第2页浏览型号IXGH16N170A的Datasheet PDF文件第3页浏览型号IXGH16N170A的Datasheet PDF文件第4页浏览型号IXGH16N170A的Datasheet PDF文件第5页浏览型号IXGH16N170A的Datasheet PDF文件第6页浏览型号IXGH16N170A的Datasheet PDF文件第7页 
IXGT16N170A  
VCES  
IC90  
VCE(sat)  
tfi(typ)  
= 1700V  
= 11A  
£ 5.0V  
= 35ns  
High Voltage  
IGBT w/ Sonic Diode  
IXGH16N170A  
IXGT16N170AH1  
IXGH16N170AH1  
H1  
Symbol  
VCES  
Test Conditions  
Maximum Ratings  
TJ = 25C to 150C  
1700  
1700  
V
V
VCGR  
TJ = 25C to 150C, RGE = 1M  
TO-268 (IXGT)  
VGES  
VGEM  
Continuous  
Transient  
20  
30  
V
V
G
E
IC25  
IC90  
IF90  
ICM  
TC = 25C  
TC = 90C  
TC = 90C  
16  
11  
17  
40  
A
A
A
A
C (Tab)  
TO-247 (IXGH)  
TC = 25C, 1ms  
SSOA  
VGE = 15V, TVJ = 125C, RG = 10  
ICM = 40  
A
(RBSOA)  
Clamped Inductive Load  
0.8 VCES  
G
C
E
tsc  
VGE = 15V, VCE = 1200V, TJ = 125°C  
10  
μs  
C (Tab)  
(SCSOA)  
RG = 22, Non Repetitive  
PC  
TC = 25C  
190  
-55 ... +150  
150  
W
C  
C  
C  
G = Gate  
E = Emiiter  
C
= Collector  
TJ  
Tab = Collector  
TJM  
Tstg  
Features  
-55 ... +150  
TL  
TSOLD  
Maximum Lead Temperature for Soldering  
Plastic Body for 10s  
300  
260  
°C  
°C  
High Blocking Voltage  
International Standard Packages  
Low Conduction Losses  
Anti-Parallel Sonic Diode  
Md  
Mounting Torque (TO-247)  
1.13/10  
Nm/lb.in  
Weight  
TO-268  
TO-247  
4
6
g
g
High Blocking Voltage  
High Currect Handling Capability  
Advantages  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25C, Unless Otherwise Specified)  
Min.  
1700  
3.0  
Typ.  
Max.  
Low Gate Drive Requirement  
High Power Density  
BVCES  
VGE(th)  
IC = 250A, VGE = 0V  
IC = 250A, VCE = VGE  
V
V
5.0  
Applications  
ICES  
VCE = 0.8 VCES, VGE = 0V  
50 A  
100 A  
750 A  
16N170A  
Switch-Mode and Resonant-Mode  
Power Supplies  
16N170AH1  
TJ = 125C  
16N170A  
Uninterruptible Power Supplies (UPS)  
AC Choppers  
1.5 mA  
16N170AH1  
IGES  
VCE = 0V, VGE = 20V  
100 nA  
Capacitor Discharge Circuits  
AC Motor Drives  
VCE(sat)  
IC = 11A, VGE = 15V, Note 1  
4.0  
4.5  
5.0  
V
V
TJ = 125C  
DC Servo & Robot Drives  
DS99235C(04/14)  
© 2014 IXYS CORPORATION, All Rights Reserved  

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