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IXGH15N120CD1 PDF预览

IXGH15N120CD1

更新时间: 2024-11-23 22:07:11
品牌 Logo 应用领域
IXYS 二极管双极性晶体管
页数 文件大小 规格书
2页 58K
描述
Low VCE(sat) IGBT with Diode High Speed IGBT with Diode

IXGH15N120CD1 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Transferred零件包装代码:TO-247AD
包装说明:TO-247AD, 3 PIN针数:3
Reach Compliance Code:unknown风险等级:5.8
外壳连接:COLLECTOR最大集电极电流 (IC):30 A
集电极-发射极最大电压:1200 V配置:SINGLE WITH BUILT-IN DIODE
最大降落时间(tf):190 ns门极发射器阈值电压最大值:5 V
门极-发射极最大电压:20 VJEDEC-95代码:TO-247AD
JESD-30 代码:R-PSFM-T3JESD-609代码:e0
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):150 W认证状态:Not Qualified
子类别:Insulated Gate BIP Transistors表面贴装:NO
端子面层:Tin/Lead (Sn/Pb)端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:POWER CONTROL晶体管元件材料:SILICON
标称断开时间 (toff):520 ns标称接通时间 (ton):43 ns

IXGH15N120CD1 数据手册

 浏览型号IXGH15N120CD1的Datasheet PDF文件第2页 
Low VCE(sat) IGBT with Diode  
High Speed IGBT with Diode  
VDSS  
IC25 VCE(sat)  
IXGH/IXGT 15N120BD1  
IXGH/IXGT 15N120CD1  
1200 V 30 A 3.2 V  
1200 V 30 A 3.8 V  
Preliminary data  
TO-247AD  
(IXGH)  
Symbol  
TestConditions  
MaximumRatings  
VCES  
VCGR  
TJ = 25°C to 150°C  
1200  
1200  
V
V
TJ = 25°C to 150°C; RGE = 1 MW  
G
C
VGES  
VGEM  
Continuous  
Transient  
±20  
±30  
V
V
E
TAB  
IC25  
IC90  
ICM  
TC = 25°C  
30  
15  
60  
A
A
A
TO-268  
(IXGT)  
TC = 90°C  
G
TC = 25°C, 1 ms  
E
SSOA  
VGE= 15 V, TJ = 125°C, RG = 10 W  
ICM = 40  
A
(RBSOA)  
Clampedinductiveload  
@0.8 VCES  
C (TAB)  
PC  
TC = 25°C  
150  
W
G = Gate  
E = Emitter  
C = Collector  
TAB = Collector  
TJ  
-55 ... +150  
150  
°C  
°C  
°C  
TJM  
Tstg  
-55 ... +150  
Md  
Mountingtorque  
1.13/10 Nm/lb.in.  
Features  
Maximumleadtemperatureforsoldering  
1.6 mm (0.062 in.) from case for 10 s  
300  
260  
6/4  
°C  
°C  
g
• Internationalstandardpackages:  
JEDEC TO-247AD & TO-268  
• IGBT and anti-parallel FRED in one  
package  
• MOS Gate turn-on  
- drivesimplicity  
Maximumtabtemperature  
soldering SMD devices for 10s  
Weight  
TO-247AD/TO-268  
• Fast Recovery Expitaxial Diode (FRED)  
- soft recovery with low IRM  
Applications  
Symbol  
TestConditions  
CharacteristicValues  
(TJ = 25°C, unless otherwise specified)  
min. typ. max.  
• AC motor speed control  
• DC servo and robot drives  
• DC choppers  
• Uninterruptiblepowersupplies(UPS)  
• Switch-modeandresonant-mode  
powersupplies  
BVCES  
VGE(th)  
IC = 1 A, VGE = 0 V  
1000  
2.5  
V
V
IC = 250 mA, VCE = VGE  
5.0  
ICES  
VCE = VCES  
VGE = 0 V  
TJ = 25°C  
TJ = 125°C  
500 mA  
Advantages  
2
mA  
• Saves space (two devices in one  
package)  
IGES  
VCE = 0 V, VGE = ±20 V  
±100 nA  
• Easy to mount with 1 screw  
(isolatedmountingscrewhole)  
• Reduces assembly time and cost  
VCE(sat)  
IC  
= IC90, VGE = 15 V  
15N120BD1  
15N120CD1  
3.2  
3.8  
V
V
Note 2  
IXYS reserves the right to change limits, test conditions, and dimensions.  
© 2000 IXYS All rights reserved  
98658A(7/00)  
1 - 2  

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