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IXGH20N100 PDF预览

IXGH20N100

更新时间: 2024-11-19 14:56:51
品牌 Logo 应用领域
力特 - LITTELFUSE 超快恢复二极管开关双极性晶体管
页数 文件大小 规格书
3页 126K
描述
IXYS系列穿通型(PT)IGBT具有高增益、极快速切换和低传导损耗等优点。 这些产品针对UPS、离线式开关电源和电磁炉等高达100kHz的高速应用进行了优化。 G系列可提供带集成式超快恢复二极管(FRED)或不带FRED的型号。

IXGH20N100 技术参数

是否Rohs认证: 符合生命周期:Active
Reach Compliance Code:unknown风险等级:5.24
Base Number Matches:1

IXGH20N100 数据手册

 浏览型号IXGH20N100的Datasheet PDF文件第2页浏览型号IXGH20N100的Datasheet PDF文件第3页 
IXGH 20N100 VCES  
IXGT 20N100 IC25  
= 1000 V  
40 A  
IGBT  
=
VCE(sat) = 3.0 V  
tfi(typ)  
= 280 ns  
Preliminary data  
Symbol  
TestConditions  
MaximumRatings  
TO-268  
(IXGT)  
VCES  
VCGR  
TJ = 25°C to 150°C  
1000  
1000  
V
G
E
TJ = 25°C to 150°C; RGE = 1 MW  
V
VGES  
VGEM  
Continuous  
Transient  
±20  
±30  
V
V
(TAB)  
TO-247 AD (IXGH)  
IC25  
IC90  
ICM  
TC = 25°C  
40  
20  
80  
A
A
A
TC = 90°C  
TC = 25°C, 1 ms  
SSOA  
(RBSOA)  
VGE= 15 V, TVJ = 125°C, RG = 47 W  
Clamped inductive load, L = 100 mH  
ICM = 40  
@ 0.8 VCES  
A
G
C
E
C (TAB)  
PC  
TC = 25°C  
150  
W
TJ  
-55 ... +150  
150  
°C  
°C  
°C  
G = Gate,  
E = Emitter,  
C = Collector,  
TAB = Collector  
TJM  
Tstg  
-55 ... +150  
Maximum Lead temperature for soldering  
1.6 mm (0.062 in.) from case for 10 s  
Maximum Tab temperature for soldering SMD devices for 10 s  
300  
260  
°C  
°C  
Features  
• Internationalstandardpackages  
JEDEC TO-268 surface and  
JEDEC TO-247 AD  
Md  
Mountingtorque(M3)  
1.13/10 Nm/lb.in.  
Weight  
TO-247 AD  
TO-268  
6
4
g
g
• Highcurrenthandlingcapability  
• MOS Gate turn-on  
- drive simplicity  
Applications  
• AC motor speed control  
• DC servo and robot drives  
• DC choppers  
• Uninterruptiblepowersupplies(UPS)  
• Switched-modeandresonant-mode  
powersupplies  
Symbol  
TestConditions  
CharacteristicValues  
(TJ = 25°C, unless otherwise specified)  
min. typ. max.  
BVCES  
VGE(th)  
IC = 1 mA, VGE = 0 V  
IC = 250 mA, VCE = VGE  
1000  
2.5  
V
V
5
• Capacitordischarge  
ICES  
VCE = VCES  
VGE = 0 V  
TJ = 25°C  
TJ = 125°C  
250  
1
mA  
mA  
Advantages  
• High power density  
IGES  
VCE = 0 V, VGE = ±20 V  
±100  
nA  
V
• Suitableforsurfacemounting  
• Easy to mount with 1 screw,  
(isolatedmountingscrewhole)  
VCE(sat)  
IC = IC90, VGE = 15 V  
2.2  
3.0  
IXYS reserves the right to change limits, test conditions, and dimensions.  
© 2000 IXYS All rights reserved  
98620B(7/00)  
1 - 2  

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