Datasheet > IXGH20N120B

IXGH20N120B

更新时间： 2024-11-22 14:56:55

品牌	Logo	应用领域
力特 - LITTELFUSE		开关双极性晶体管
页数	文件大小	规格书
6页	635K
描述
GenX3? IGBT采用我们完善的HDMOS IGBT工艺进行PT（打穿）生产。? 300V? GenX3? IGBT提供高达150 kHz的开关性能，电流范围在42A至120A之间。由于兼具

阅读下载

中文翻译

获取价格

技术参数
数据手册

如果您发现信息不准确，欢迎纠错

IXGH20N120B 技术参数

生命周期：	Active	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.65
Base Number Matches：	1

IXGH20N120B 数据手册

V_CES

I_C25

= 1200 V

= 40 A

IXGH 20N120B

IXGT 20N120B

High Voltage IGBT

V_CE(sat)= 3.4 V

t_fi(typ)

= 160 ns

Preliminary Data Sheet

TO-268

(IXGT)

Symbol

TestConditions

Maximum Ratings

V_CES

V_CGR

T_J= 25°C to 150°C

T_J= 25°C to 150°C; R_GE= 1 MΩ

1200

V_GES

V_GEM

Continuous

Transient

C(TAB)

I_C25

I_C110

I_CM

T_C= 25°C

T_C= 110°C

T_C= 25°C, 1 ms

TO-247 AD (IXGH)

SSOA

= 15 V, T_VJ= 125°C, R_G= 10 Ω

= 80

(RBSOA)

C^Gla^Emped inductive load

@ 0^C.8^MV_CES

190

P_C

T_C= 25°C

T_J

T_JM

T_stg

-55 ... +150

150

-55 ... +150

°C

G = Gate,

C = Collector,

TAB = Collector

E = Emitter,

Maximum Lead temperature for soldering

1.6 mm (0.062 in.) from case for 10 s

300

°C

Maximum Tab temperature for soldering SMD devices for 10 s

260

°C

Features

High Voltage IGBT for resonant

power supplies

M_d

Mounting torque (M3) (TO-247)

1.13/10Nm/lb.in.

- Induction heating

Weight

TO-247 AD

TO-268

- Rice cookers

International standard packages

JEDEC TO-268 surface and

JEDEC TO-247 AD

Low switching losses, low V_(sat)

MOS Gate turn-on

- drive simplicity

Symbol

TestConditions

Characteristic Values

(T_J= 25°C, unless otherwise specified)

min. typ. max.

Advantages

BV_CES

V_GE(th)

= 250 µA, V_GE= 0 V

1200

2.5

I^C_C= 250 µA, V = V_GE

High power density

Suitable for surface mounting

I_CES

V_CE= V_CES

T_J= 25°C

T_J= 125°C

µA

Easy to mount with 1 screw,

(isolated mounting screw hole)

I_GES

V_CE= 0 V, V_GE= 20 V

I_C= 20A, V_GE= 15 V

100

V_CE(sat)

2.9

2.8

3.4

3.8

DS98986D(05/03)

12 3 4 5 6

中文翻译

下载PDF

与IXGH20N120B相关器件

型号	品牌	获取价格	描述	数据表
IXGH20N140C3H1	IXYS	获取价格	GenX3 1400V IGBTs w/ Diode
IXGH20N140C3H1	LITTELFUSE	获取价格	GenX3? IGBT采用我们完善的HDMOS IGBT工艺进行PT（打穿）生产。? 30
IXGH20N30	IXYS	获取价格	HiPerFAST IGBT
IXGH20N30S	ETC	获取价格	TRANSISTOR \| IGBT \| N-CHAN \| 300V V(BR)CES \| 40A I(C) \| TO-247SMD
IXGH20N50	ETC	获取价格	TRANSISTOR \| IGBT \| N-CHAN \| 500V V(BR)CES \| 40A I(C) \| TO-247
IXGH20N50A	ETC	获取价格	TRANSISTOR \| IGBT \| N-CHAN \| 500V V(BR)CES \| 40A I(C) \| TO-247
IXGH20N50U1	ETC	获取价格	TRANSISTOR \| IGBT \| N-CHAN \| 500V V(BR)CES \| 40A I(C) \| TO-247
IXGH20N60	IXYS	获取价格	Low VCE(sat) IGBT, High speed IGBT
IXGH20N60A	IXYS	获取价格	Low VCE(sat) IGBT, High speed IGBT
IXGH20N60AU1	ETC	获取价格	TRANSISTOR \| IGBT \| N-CHAN \| 600V V(BR)CES \| 40A I(C) \| TO-247AD