5秒后页面跳转
IXGH16N170 PDF预览

IXGH16N170

更新时间: 2024-11-19 14:56:47
品牌 Logo 应用领域
力特 - LITTELFUSE /
页数 文件大小 规格书
6页 219K
描述
功能与特色: 应用:?

IXGH16N170 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:SMALL OUTLINE, R-PSSO-G2Reach Compliance Code:compliant
风险等级:5.34Is Samacsys:N
外壳连接:COLLECTOR最大集电极电流 (IC):32 A
集电极-发射极最大电压:1700 V配置:SINGLE
最大降落时间(tf):1100 ns门极发射器阈值电压最大值:5 V
门极-发射极最大电压:20 VJEDEC-95代码:TO-268AA
JESD-30 代码:R-PSSO-G2JESD-609代码:e1
元件数量:1端子数量:2
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):190 W认证状态:Not Qualified
子类别:Insulated Gate BIP Transistors表面贴装:YES
端子面层:Tin/Silver/Copper (Sn/Ag/Cu)端子形式:GULL WING
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:POWER CONTROL晶体管元件材料:SILICON
标称断开时间 (toff):1600 ns标称接通时间 (ton):90 ns
Base Number Matches:1

IXGH16N170 数据手册

 浏览型号IXGH16N170的Datasheet PDF文件第2页浏览型号IXGH16N170的Datasheet PDF文件第3页浏览型号IXGH16N170的Datasheet PDF文件第4页浏览型号IXGH16N170的Datasheet PDF文件第5页浏览型号IXGH16N170的Datasheet PDF文件第6页 
IXGH 16N170  
IXGT 16N170  
VCES  
IC25  
= 1700 V  
32 A  
High Voltage  
IGBT  
=
VCE(sat) = 3.5 V  
TO-268 (D3-Pak) (IXGT)  
Symbol  
TestConditions  
Maximum Ratings  
VCES  
VCGR  
TJ = 25°C to 150°C  
1700  
1700  
V
V
G
E
TJ = 25°C to 150°C; RGE = 1 MΩ  
C (TAB)  
VGES  
VGEM  
Continuous  
Transient  
20  
30  
V
V
TO-247(IXGH)  
IC25  
IC90  
ICM  
TC = 25°C  
32  
16  
80  
A
A
A
TC = 90°C  
TC = 25°C, 1 ms  
TAB)  
SSOA  
(RBSOA)  
VGE = 15 V, TVJ = 125°C, RG = 10 Ω  
Clamped inductive load  
ICM = 40  
@ 0.8 VCES  
A
G
C
E
G = Gate,  
E=Emitter,  
C = Collector,  
TAB = Collector  
PC  
TC = 25°C  
190  
W
TJ  
-55 ... +150  
150  
°C  
°C  
°C  
TJM  
Tstg  
Features  
-55 ... +150  
z International standard packages  
JEDEC TO-268 and  
TL  
TSOLD  
1.6 mm (0.062 in.) from case for 10 s  
Plastic body for 10 s  
300  
260  
°C  
°C  
JEDEC TO-247 AD  
Md  
Mounting torque (M3)  
1.13/10Nm/lb.in.  
z High current handling capability  
z MOS Gate turn-on  
Weight  
TO-247 AD  
TO-268  
6
4
g
g
- drive simplicity  
z Rugged NPT structure  
z Molding epoxies meet UL 94 V-0  
flammability classification  
Applications  
z Capacitor discharge & pulser circuits  
z AC motor speed control  
Symbol  
TestConditions  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
z DC servo and robot drives  
z DC choppers  
Min. Typ. Max.  
BVCES  
VGE(th)  
IC = 250 μA, VGE = 0 V  
IC = 250 μA, VCE = VGE  
1700  
3.0  
V
V
z Uninterruptible power supplies (UPS)  
z Switched-mode and resonant-mode  
power supplies  
5.0  
ICES  
VCE = 0.8 • VCES  
VGE = 0 V  
TJ = 25°C  
TJ = 125°C  
50  
500  
μA  
μA  
Advantages  
IGES  
VCE = 0 V, VGE = 20 V  
IC = IC90, VGE = 15 V  
100  
3.5  
nA  
z High power density  
VCE(sat)  
TJ = 25°C  
TJ = 125°C  
2.7  
3.3  
V
V
z Suitable for surface mounting  
z Easy to mount with 1 screw,  
(isolated mounting screw hole)  
DS98996C(07/06)  
© 2006 IXYS CORPORATION All rights reserved  

与IXGH16N170相关器件

型号 品牌 获取价格 描述 数据表
IXGH16N170_06 IXYS

获取价格

High Voltage IGBT
IXGH16N170A IXYS

获取价格

High Voltage IGBT
IXGH16N170A LITTELFUSE

获取价格

功能与特色: 应用:?
IXGH16N170A_05 IXYS

获取价格

High Voltage IGBT
IXGH16N170AH1 IXYS

获取价格

High Voltage IGBT
IXGH16N170AH1 LITTELFUSE

获取价格

功能与特色: 应用:?
IXGH16N60B2D1 IXYS

获取价格

HiPerFAST IGBTs B2-Class High Speed w/ Diode
IXGH16N60C2D1 IXYS

获取价格

HiPerFAST IGBTs C2-Class High Speed w/ Diode
IXGH16N60C2D1 LITTELFUSE

获取价格

GenX3? IGBT采用我们完善的HDMOS IGBT工艺进行PT(打穿)生产。? 30
IXGH17N100 IXYS

获取价格

Low VCE(sat) IGBT, High speed IGBT