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IXGH15N120B2D1 PDF预览

IXGH15N120B2D1

更新时间: 2024-11-07 14:56:43
品牌 Logo 应用领域
力特 - LITTELFUSE 开关双极性晶体管
页数 文件大小 规格书
3页 136K
描述
GenX3? IGBT采用我们完善的HDMOS IGBT工艺进行PT(打穿)生产。? 300V? GenX3? IGBT提供高达150 kHz的开关性能,电流范围在42A至120A之间。 由于兼具

IXGH15N120B2D1 技术参数

生命周期:Active包装说明:,
Reach Compliance Code:unknown风险等级:5.65
Is Samacsys:NBase Number Matches:1

IXGH15N120B2D1 数据手册

 浏览型号IXGH15N120B2D1的Datasheet PDF文件第2页浏览型号IXGH15N120B2D1的Datasheet PDF文件第3页 
Advance Technical Information  
HiPerFASTTM IGBT  
VCES  
IC25  
=1200 V  
= 30 A  
IXGH15N120B2D1  
IXGT15N120B2D1  
VCE(sat) = 3.3 V  
Optimized for 10-20 KHz hard  
switching and up to 100 KHz  
resonant switching  
tfi(typ)  
= 137 ns  
Symbol  
Test Conditions  
Maximum Ratings  
TO-247AD  
(IXGH)  
VCES  
VCGR  
TJ = 25°C to 150°C  
1200  
1200  
V
TJ = 25°C to 150°C; RGE = 1 MΩ  
V
VGES  
VGEM  
Continuous  
Transient  
20  
30  
V
V
G
C
TAB  
E
IC25  
IC90  
ICM  
TC = 25°C  
30  
15  
60  
A
A
A
TO-268  
(IXGT)  
TC = 90°C  
TC = 25°C, 1 ms  
G
SSOA  
VGE = 15 V, TVJ = 125°C, RG = 10 Ω  
ICM = 40  
A
E
C (TAB)  
(RBSOA)  
Clamped inductive load  
@ 0.8 VCES  
PC  
TC = 25°C  
192  
W
G = Gate  
C = Collector  
E = Emitter  
TAB = Collector  
TJ  
-55 ... +150  
150  
°C  
°C  
°C  
TJM  
Tstg  
-55 ... +150  
Features  
Md  
Mounting torque (TO-247)  
1.13/10 Nm/lb.in.  
z International standard packages:  
JEDEC TO-247AD & TO-268  
z IGBT and anti-parallel FRED in one  
package  
Maximum lead temperature for soldering  
1.6 mm (0.062 in.) from case for 10 s  
300  
260  
6 / 4  
°C  
Maximum tab temperature  
soldering SMD devices for 10s  
°C  
z MOS Gate turn-on  
- drive simplicity  
z Fast Recovery Expitaxial Diode (FRED)  
- soft recovery with low IRM  
Weight  
TO-247AD / TO-268  
g
Applications  
z
AC motor speed control  
DC servo and robot drives  
DC choppers  
Uninterruptible power supplies (UPS)  
Symbol  
TestConditions  
Characteristic Values  
z
(TJ = 25°C, unless otherwise specified)  
Min.  
Typ.  
Max.  
z
BVCES  
VGE(th)  
IC = 250 μA, VGE = 0 V  
IC = 250 μA, VCE = VGE  
1200  
2.5  
V
V
z
z
5.0  
Switch-mode and resonant-mode  
power supplies  
ICES  
VCE = VCES  
VGE = 0 V  
TJ = 25°C  
TJ = 125°C  
100  
3.5  
μA  
mA  
Advantages  
z Saves space (two devices in one  
package)  
Easy to mount with 1 screw  
IGES  
VCE = 0 V, VGE = 20 V  
IC = ICE90, VGE = 15  
100  
3.3  
nA  
z
VCE(sat)  
V
V
(isolated mounting screw hole)  
Reduces assembly time and cost  
z
TJ = 125°C  
2.7  
© 2005 IXYS All rights reserved  
DS99492(09/05)  

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