是否无铅: | 不含铅 | 是否Rohs认证: | 符合 |
生命周期: | Obsolete | 零件包装代码: | TO-247AD |
包装说明: | FLANGE MOUNT, R-PSFM-T3 | 针数: | 3 |
Reach Compliance Code: | compliant | 风险等级: | 5.82 |
Is Samacsys: | N | 外壳连接: | COLLECTOR |
最大集电极电流 (IC): | 24 A | 集电极-发射极最大电压: | 600 V |
配置: | SINGLE WITH BUILT-IN DIODE | 门极发射器阈值电压最大值: | 5 V |
门极-发射极最大电压: | 20 V | JEDEC-95代码: | TO-247AD |
JESD-30 代码: | R-PSFM-T3 | 元件数量: | 1 |
端子数量: | 3 | 最高工作温度: | 150 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | FLANGE MOUNT | 峰值回流温度(摄氏度): | NOT SPECIFIED |
极性/信道类型: | N-CHANNEL | 最大功率耗散 (Abs): | 100 W |
认证状态: | Not Qualified | 子类别: | Insulated Gate BIP Transistors |
表面贴装: | NO | 端子形式: | THROUGH-HOLE |
端子位置: | SINGLE | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
晶体管应用: | POWER CONTROL | 晶体管元件材料: | SILICON |
标称断开时间 (toff): | 170 ns | 标称接通时间 (ton): | 40 ns |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
IXGH12N90C | IXYS |
获取价格 |
HiPerFAST IGBT Lightspeed Series | |
IXGH12N90C_03 | IXYS |
获取价格 |
HiPerFAST IGBT Lightspeed Series | |
IXGH14N170A | IXYS |
获取价格 |
High Voltage IGBT | |
IXGH15N120B | IXYS |
获取价格 |
HiPerFAST IGBT | |
IXGH15N120B2D1 | IXYS |
获取价格 |
HiPerFAST IGBT | |
IXGH15N120B2D1 | LITTELFUSE |
获取价格 |
GenX3? IGBT采用我们完善的HDMOS IGBT工艺进行PT(打穿)生产。? 30 | |
IXGH15N120BD1 | IXYS |
获取价格 |
Low VCE(sat) IGBT with Diode High Speed IGBT with Diode | |
IXGH15N120C | IXYS |
获取价格 |
IGBT Lightspeed Series | |
IXGH15N120CD1 | IXYS |
获取价格 |
Low VCE(sat) IGBT with Diode High Speed IGBT with Diode | |
IXGH16N170 | IXYS |
获取价格 |
High Voltage IGBT |