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IXGH12N60CD1 PDF预览

IXGH12N60CD1

更新时间: 2024-11-05 22:07:11
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页数 文件大小 规格书
2页 63K
描述
HiPerFASTTM IGBT LightspeedTM Series

IXGH12N60CD1 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete零件包装代码:TO-247AD
包装说明:FLANGE MOUNT, R-PSFM-T3针数:3
Reach Compliance Code:compliant风险等级:5.82
Is Samacsys:N外壳连接:COLLECTOR
最大集电极电流 (IC):24 A集电极-发射极最大电压:600 V
配置:SINGLE WITH BUILT-IN DIODE门极发射器阈值电压最大值:5 V
门极-发射极最大电压:20 VJEDEC-95代码:TO-247AD
JESD-30 代码:R-PSFM-T3元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):100 W
认证状态:Not Qualified子类别:Insulated Gate BIP Transistors
表面贴装:NO端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:POWER CONTROL晶体管元件材料:SILICON
标称断开时间 (toff):170 ns标称接通时间 (ton):40 ns
Base Number Matches:1

IXGH12N60CD1 数据手册

 浏览型号IXGH12N60CD1的Datasheet PDF文件第2页 
HiPerFASTTM IGBT  
LightspeedTM Series  
VCES = 600 V  
IC25 = 24 A  
VCE(sat) = 2.7 V  
IXGH 12N60CD1  
t
= 55 ns  
fi(typ)  
TO-247 AD  
Symbol  
TestConditions  
Maximum Ratings  
VCES  
VCGR  
T
T
= 25°C to 150°C  
600  
600  
V
V
J
J
= 25°C to 150°C; R = 1 MΩ  
GE  
VGES  
VGEM  
Continuous  
Transient  
±20  
±30  
V
V
TAB)  
G
C
E
IC25  
IC90  
ICM  
T
= 25°C  
24  
12  
48  
A
A
A
C
T
= 90°C  
C
T
= 25°C, 1 ms  
C
G = Gate,  
C = Collector,  
TAB = Collector  
SSOA  
(RBSOA)  
V
= 15 V, T = 125°C, R = 33 Ω  
I = 24  
CM  
A
E = Emitter,  
GE  
VJ  
G
Clamped inductive load, L = 300 µH  
= 25°C  
@ 0.8 V  
CES  
PC  
T
100  
W
C
TJ  
-55 ... +150  
150  
°C  
°C  
°C  
TJM  
Tstg  
-55 ... +150  
Md  
Mounting torque with screw M3  
Mounting torque with screw M3.5  
0.45/4 Nm/lb.in.  
0.55/5 Nm/lb.in.  
Weight  
6
g
Features  
Maximum lead temperature for soldering  
1.6 mm (0.062 in.) from case for 10 s  
300  
°C  
l
Very high frequency IGBT  
l
l
TM  
New generation HDMOS process  
International standard package  
JEDEC TO-247AD  
l
High peak current handling capability  
Applications  
Symbol  
TestConditions  
Characteristic Values  
(T = 25°C, unless otherwise specified)  
J
l
PFC circuit  
AC motor speed control  
min. typ. max.  
l
l
DC servo and robot drives  
Switch-mode and resonant-mode  
power supplies  
High power audio amplifiers  
BVCES  
VGE(th)  
I
= 250 µA, V = 0 V  
600  
2.5  
V
V
C
GE  
l
I
= 250 µA, V = V  
5.0  
C
GE  
GE  
l
ICES  
V
V
= 0.8 V  
= 0 V  
T = 25°C  
200 µA  
1.5 mA  
CE  
CES  
J
T = 125°C  
GE  
J
Advantages  
IGES  
V
= 0 V, V = ±20 V  
±100 nA  
CE  
GE  
l
Fast switching speed  
High power density  
VCE(sat)  
I
= I , V = 15 V  
2.1  
2.7  
V
C
CE90  
GE  
l
98623A (2/02)  
© 2002 IXYS All rights reserved  

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