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IXGH12N100U1 PDF预览

IXGH12N100U1

更新时间: 2024-09-15 22:11:51
品牌 Logo 应用领域
IXYS 二极管双极性晶体管
页数 文件大小 规格书
5页 154K
描述
Low VCE(sat) IGBT with Diode High Speed IGBT with Diode

IXGH12N100U1 数据手册

 浏览型号IXGH12N100U1的Datasheet PDF文件第2页浏览型号IXGH12N100U1的Datasheet PDF文件第3页浏览型号IXGH12N100U1的Datasheet PDF文件第4页浏览型号IXGH12N100U1的Datasheet PDF文件第5页 
VCES  
IC25 VCE(sat)  
Low VCE(sat) IGBT with Diode  
High Speed IGBT with Diode  
Combi Pack  
IXGH 12N100U1 1000 V 24 A 3.5 V  
IXGH 12N100AU1 1000 V 24 A 4.0 V  
Symbol  
Test Conditions  
Maximum Ratings  
TO-247AD  
VCES  
VCGR  
TJ = 25°C to 150°C  
1000  
1000  
V
V
TJ = 25°C to 150°C; RGE = 1 MW  
VGES  
VGEM  
Continuous  
Transient  
±20  
±30  
V
V
C (TAB)  
G
C
IC25  
IC90  
ICM  
TC = 25°C  
24  
12  
48  
A
A
A
E
TC = 90°C  
TC = 25°C, 1 ms  
G = Gate  
C
= Collector  
E = Emitter  
TAB = Collector  
SSOA  
VGE = 15 V, TVJ = 125°C, RG = 150 W  
Clamped inductive load, L = 300 mH  
ICM = 24  
A
(RBSOA)  
@ 0.8 VCES  
PC  
TC = 25°C  
100  
W
TJ  
-55 ... +150  
150  
°C  
°C  
°C  
TJM  
Tstg  
Features  
-55 ... +150  
• Internationalstandardpackages  
JEDEC TO-247  
Md  
Mounting torque with screw M3  
1.13/10 Nm/lb.in.  
• IGBT with antiparallel FRED in one  
package  
Weight  
6
g
• HDMOSTM process  
• Low VCE(sat)  
Maximumleadtemperatureforsoldering  
1.6 mm (0.062 in.) from case for 10 s  
300  
°C  
- forminimumon-stateconduction  
losses  
• MOS Gate turn-on  
- drive simplicity  
• Fast Recovery Expitaxial Diode (FRED)  
- soft recovery with low IRM  
Symbol  
TestConditions  
CharacteristicValues  
(TJ = 25°C, unless otherwise specified)  
Min.  
Typ.  
0.072  
-0.192  
Max.  
BVCES  
IC = 3 mA, VGE = 0 V  
1000  
V
Applications  
• DC choppers  
• AC motor speed control  
• DC servo and robot drives  
• Uninterruptiblepowersupplies(UPS)  
• Switch-modeandresonant-mode  
power supplies  
BVCEStemperaturecoefficient  
%/K  
VGE(th)  
IC = 500 mA, VGE = VGE  
2.5  
5.5  
V
VGE(th) temperature coefficient  
%/K  
ICES  
VCE = 0.8, VCES  
VGE= 0 V  
TJ = 25°C  
300  
5
mA  
TJ = 125°C  
mA  
Advantages  
• Easy to mount with one screw  
• Reduces assembly time and cost  
• Space savings (two devices in one  
package)  
IGES  
VCE = 0 V, VGE = ±20 V  
±100  
nA  
VCE(sat)  
IC = ICE90, VGE = 15  
12N100U1  
12N100AU1  
3.5  
4.0  
V
V
IXYS reserves the right to change limits, test conditions, and dimensions.  
© 2000 IXYS All rights reserved  
95596C (7/00)  
1 - 5  

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