VCES
IC25 VCE(sat)
Low VCE(sat) IGBT with Diode
High Speed IGBT with Diode
Combi Pack
IXGH 12N100U1 1000 V 24 A 3.5 V
IXGH 12N100AU1 1000 V 24 A 4.0 V
Symbol
Test Conditions
Maximum Ratings
TO-247AD
VCES
VCGR
TJ = 25°C to 150°C
1000
1000
V
V
TJ = 25°C to 150°C; RGE = 1 MW
VGES
VGEM
Continuous
Transient
±20
±30
V
V
C (TAB)
G
C
IC25
IC90
ICM
TC = 25°C
24
12
48
A
A
A
E
TC = 90°C
TC = 25°C, 1 ms
G = Gate
C
= Collector
E = Emitter
TAB = Collector
SSOA
VGE = 15 V, TVJ = 125°C, RG = 150 W
Clamped inductive load, L = 300 mH
ICM = 24
A
(RBSOA)
@ 0.8 VCES
PC
TC = 25°C
100
W
TJ
-55 ... +150
150
°C
°C
°C
TJM
Tstg
Features
-55 ... +150
• Internationalstandardpackages
JEDEC TO-247
Md
Mounting torque with screw M3
1.13/10 Nm/lb.in.
• IGBT with antiparallel FRED in one
package
Weight
6
g
• HDMOSTM process
• Low VCE(sat)
Maximumleadtemperatureforsoldering
1.6 mm (0.062 in.) from case for 10 s
300
°C
- forminimumon-stateconduction
losses
• MOS Gate turn-on
- drive simplicity
• Fast Recovery Expitaxial Diode (FRED)
- soft recovery with low IRM
Symbol
TestConditions
CharacteristicValues
(TJ = 25°C, unless otherwise specified)
Min.
Typ.
0.072
-0.192
Max.
BVCES
IC = 3 mA, VGE = 0 V
1000
V
Applications
• DC choppers
• AC motor speed control
• DC servo and robot drives
• Uninterruptiblepowersupplies(UPS)
• Switch-modeandresonant-mode
power supplies
BVCEStemperaturecoefficient
%/K
VGE(th)
IC = 500 mA, VGE = VGE
2.5
5.5
V
VGE(th) temperature coefficient
%/K
ICES
VCE = 0.8, VCES
VGE= 0 V
TJ = 25°C
300
5
mA
TJ = 125°C
mA
Advantages
• Easy to mount with one screw
• Reduces assembly time and cost
• Space savings (two devices in one
package)
IGES
VCE = 0 V, VGE = ±20 V
±100
nA
VCE(sat)
IC = ICE90, VGE = 15
12N100U1
12N100AU1
3.5
4.0
V
V
IXYS reserves the right to change limits, test conditions, and dimensions.
© 2000 IXYS All rights reserved
95596C (7/00)
1 - 5