Datasheet > IXGH10N60U1

IXGH10N60U1

更新时间： 2024-11-19 22:41:15

品牌	Logo	应用领域
IXYS		二极管双极性晶体管
页数	文件大小	规格书
6页	114K
描述
Low VCE(sat) IGBT with Diode, High speed IGBT with Diode Combi Packs

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中文翻译

获取价格

数据手册

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IXGH10N60U1 数据手册

Low V_CE(sat)IGBT with Diode

High speed IGBT with Diode

CombiPacks

V_CES

I_C25

V_CE(sat)

600 V

20 A 2.5 V

20 A 3.0 V

IXGH10N60U1

IXGH10N60AU1 600 V

TO-247 AD

Symbol

TestConditions

Maximum Ratings

V_CES

V_CGR

T_J= 25°C to 150°C

600

T_J= 25°C to 150°C; R_GE= 1 MΩ

V_GES

V_GEM

Continuous

Transient

±20

±30

G = Gate,

C = Collector,

E = Emitter,

TAB = Collector

I_C25

I_C90

I_CM

T_C= 25°C

T_C= 90°C

T_C= 25°C, 1 ms

SSOA

V_GE= 15 V, T_VJ= 125°C, R_G= 150 Ω

I_CM= 20

(RBSOA)

Clamped inductive load, L = 300 µH

@ 0.8 V_CES

Features

P_C

T_C= 25°C

100

T_J

-55 ... +150

150

°C

International standard package

JEDEC TO-247 AD

T_JM

T_stg

IGBT and anti-parallel FRED in one

package

-55 ... +150

2nd generation HDMOS^TMprocess

Low V_CE(sat)

M_d

Mounting torque (M3)

1.13/10 Nm/lb.in.

Weight

- for low on-state conduction losses

MOS Gate turn-on

- drive simplicity

Fast RecoveryEpitaxial Diode FRED)

Maximum lead temperature for soldering

1.6 mm (0.062 in.) from case for 10 s

300

°C

- soft recovery with low I_RM

Applications

Symbol

TestConditions

Characteristic Values

(T_J= 25°C, unless otherwise specified)

min. typ. max.

AC motor speed control

DC servo and robot drives

DC choppers

Uninterruptible power supplies (UPS)

Switch-mode and resonant-mode

power supplies

BV_CES

V_GE(th)

I_C= 750 µA, V_GE= 0 V

I_C= 500 µA, V_CE= V_GE

600

2.5

5.5

I_CES

V_CE= 0.8 • V_CES

V_GE= 0 V

T_J= 25°C

T_J= 125°C

260 µA

2.5 mA

Advantages

Space savings (two devices in one

I_GES

V_CE= 0 V, V_GE= ±20 V

±100 nA

package)

Easy to mount with 1 screw

(isolated mounting screw hole)

Reduces assembly time and cost

V_CE(sat)

I_C= I_C90, V_GE= 15 V

10N60U1

10N60AU1

2.5

3.0

91751G(3/96)

12 3 4 5 6

中文翻译

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