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IXGH120N30C3 PDF预览

IXGH120N30C3

更新时间: 2023-12-06 20:13:28
品牌 Logo 应用领域
力特 - LITTELFUSE 开关双极性晶体管
页数 文件大小 规格书
7页 918K
描述
GenX3? IGBT采用我们完善的HDMOS IGBT工艺进行PT(打穿)生产。? 300V? GenX3? IGBT提供高达150 kHz的开关性能,电流范围在42A至120A之间。 由于兼具

IXGH120N30C3 数据手册

 浏览型号IXGH120N30C3的Datasheet PDF文件第2页浏览型号IXGH120N30C3的Datasheet PDF文件第3页浏览型号IXGH120N30C3的Datasheet PDF文件第4页浏览型号IXGH120N30C3的Datasheet PDF文件第5页浏览型号IXGH120N30C3的Datasheet PDF文件第6页浏览型号IXGH120N30C3的Datasheet PDF文件第7页 
Preliminary Technical Information  
GenX3TM 300V IGBT  
IXGH120N30C3*  
VCES = 300V  
IC110 = 120A  
VCE(sat) 2.1V  
tfi(typ) = 86ns  
*Obsolete Part Number  
High speed PT IGBTs for  
50-150kHz switching  
TO-247 AD  
(IXGH)  
Symbol  
Test Conditions  
Maximum Ratings  
VCES  
VCGR  
TJ = 25°C to 150°C  
300  
300  
V
V
TJ = 25°C to 150°C, RGE = 1MΩ  
G
VGES  
VGEM  
Continuous  
Transient  
±20  
±30  
V
V
C
E
G te,  
E = E,  
C = Collector,  
TAB = Collector  
IC25  
IC110  
ICM  
TC = 25°C (limited by leads)  
TC = 110°C (chip capability)  
TC = 25°C, 1ms  
75  
120  
600  
A
A
IA  
TC = 25°C  
TC = 25°C  
0  
850  
A
EAS  
mJ  
Features  
SSOA  
V
GE= 15V, TVJ = 125°C, RG = 2Ω  
ICM = 240  
A
z
High Frequency IGBT  
Square RBSOA  
High avalanche capability  
Drive simplicity with MOS Gate  
Turn-On  
(RBSOA)  
Clamped inductive load @ 300V  
TC = 25°C  
z
z
z
PC  
W
TJ  
-55 ... 0  
150  
°C  
°C  
°C  
z
High current handling capability  
TJM  
Tstg  
-5... +150  
Applications  
TL  
TSOLD  
Maximum lead temperaturr
1.6mm (0.062 in.) from case
300  
260  
°C  
°C  
z PFC Circuits  
z PDP Systems  
z Switched-mode and resonant-mode  
converters and inverters  
z SMPS  
Md  
Mounting torque  
1.13/10  
6
Nm/lb.in.  
g
Weight  
z AC motor speed control  
z DC servo and robot drives  
z DC choppers  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
Min. Typ.  
Max.  
BVCES  
VGE(th)  
IC = 250μA, VGE = 0V  
IC = 250μA, VCE = VGE  
300  
2.5  
V
V
5.0  
ICES  
VCE = VCES  
VGE = 0V  
50  
1.0  
μA  
TJ = 125°C  
TJ = 125°C  
mA  
IGES  
VCE = 0V, VGE = ±20V  
±100  
nA  
VCE(sat)  
IC = 120A, VGE = 15V  
1.75  
1.70  
2.10  
V
V
© 2008 IXYS CORPORATION, All rights reserved  
DS99850B(01/08)  

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