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IXGH120N30C3 PDF预览

IXGH120N30C3

更新时间: 2024-11-21 14:57:03
品牌 Logo 应用领域
力特 - LITTELFUSE 开关双极性晶体管
页数 文件大小 规格书
7页 918K
描述
GenX3? IGBT采用我们完善的HDMOS IGBT工艺进行PT(打穿)生产。? 300V? GenX3? IGBT提供高达150 kHz的开关性能,电流范围在42A至120A之间。 由于兼具

IXGH120N30C3 技术参数

生命周期:Obsolete包装说明:,
Reach Compliance Code:unknown风险等级:5.68
Base Number Matches:1

IXGH120N30C3 数据手册

 浏览型号IXGH120N30C3的Datasheet PDF文件第2页浏览型号IXGH120N30C3的Datasheet PDF文件第3页浏览型号IXGH120N30C3的Datasheet PDF文件第4页浏览型号IXGH120N30C3的Datasheet PDF文件第5页浏览型号IXGH120N30C3的Datasheet PDF文件第6页浏览型号IXGH120N30C3的Datasheet PDF文件第7页 
Preliminary Technical Information  
GenX3TM 300V IGBT  
IXGH120N30C3*  
VCES = 300V  
IC110 = 120A  
VCE(sat) 2.1V  
tfi(typ) = 86ns  
*Obsolete Part Number  
High speed PT IGBTs for  
50-150kHz switching  
TO-247 AD  
(IXGH)  
Symbol  
Test Conditions  
Maximum Ratings  
VCES  
VCGR  
TJ = 25°C to 150°C  
300  
300  
V
V
TJ = 25°C to 150°C, RGE = 1MΩ  
G
VGES  
VGEM  
Continuous  
Transient  
±20  
±30  
V
V
C
E
G te,  
E = E,  
C = Collector,  
TAB = Collector  
IC25  
IC110  
ICM  
TC = 25°C (limited by leads)  
TC = 110°C (chip capability)  
TC = 25°C, 1ms  
75  
120  
600  
A
A
IA  
TC = 25°C  
TC = 25°C  
0  
850  
A
EAS  
mJ  
Features  
SSOA  
V
GE= 15V, TVJ = 125°C, RG = 2Ω  
ICM = 240  
A
z
High Frequency IGBT  
Square RBSOA  
High avalanche capability  
Drive simplicity with MOS Gate  
Turn-On  
(RBSOA)  
Clamped inductive load @ 300V  
TC = 25°C  
z
z
z
PC  
W
TJ  
-55 ... 0  
150  
°C  
°C  
°C  
z
High current handling capability  
TJM  
Tstg  
-5... +150  
Applications  
TL  
TSOLD  
Maximum lead temperaturr
1.6mm (0.062 in.) from case
300  
260  
°C  
°C  
z PFC Circuits  
z PDP Systems  
z Switched-mode and resonant-mode  
converters and inverters  
z SMPS  
Md  
Mounting torque  
1.13/10  
6
Nm/lb.in.  
g
Weight  
z AC motor speed control  
z DC servo and robot drives  
z DC choppers  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
Min. Typ.  
Max.  
BVCES  
VGE(th)  
IC = 250μA, VGE = 0V  
IC = 250μA, VCE = VGE  
300  
2.5  
V
V
5.0  
ICES  
VCE = VCES  
VGE = 0V  
50  
1.0  
μA  
TJ = 125°C  
TJ = 125°C  
mA  
IGES  
VCE = 0V, VGE = ±20V  
±100  
nA  
VCE(sat)  
IC = 120A, VGE = 15V  
1.75  
1.70  
2.10  
V
V
© 2008 IXYS CORPORATION, All rights reserved  
DS99850B(01/08)  

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