Datasheet > IXGH120N30B3

IXGH120N30B3

更新时间： 2024-11-06 14:56:07

品牌	Logo	应用领域
力特 - LITTELFUSE		开关双极性晶体管
页数	文件大小	规格书
6页	841K
描述
GenX3? IGBT采用我们完善的HDMOS IGBT工艺进行PT（打穿）生产。? 300V? GenX3? IGBT提供高达150 kHz的开关性能，电流范围在42A至120A之间。由于兼具

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中文翻译

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技术参数
数据手册

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IXGH120N30B3 技术参数

生命周期：	Obsolete	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.68
Is Samacsys：	N	Base Number Matches：	1

IXGH120N30B3 数据手册

V_CES= 300V

I_C110= 120A

V_CE(sat)≤ 1.7V

GenX3 300V IGBT

IXGH120N30B3*

*Obsolete Part Number

Medium speed low Vsat PT

IGBTs for 10-50 kHz switching

Symbol

Test Conditions

Maximum Ratings

TO-247 (IXGH)

V_CES

V_CGR

T_J= 25°C to 150°C

T_J= 25°C to 150°C, R_GE= 1MΩ

300

V_GES

V_GEM

Continuous

Transient

±20

±30

TAB

I_C25

I_C110

I_CM

T_C= 25°C (limited by leads)

T_C= 110°C

T_C= 25°C, 1ms

120

480

G = Gate

E = Emitter

= Collector

SSOA

(RBSOA)

V_GE= 15V, T_J= 125°C, R_G= 1Ω

Clamped inductive load @V_CE≤ 300V

I_CM= 240

TAB = Collector

P_C

T_C= 25°C

540

T_J

T_JM

T_stg

-55 ... +150

150

°C

Features

-55 ... +150

M_d

Mounting torque

1.13 / 10

Nm/lb.in.

^zOptimized for low switching losses

^zSquare RBSOA

^zInternational standard package

T_L

T_SOLD

Maximum lead temperature for soldering

1.6mm (0.062 in.) from case for 10s

300

260

°C

Weight

Advantages

^zHigh power density

^zLow gate drive requirement

Applications

^zHigh Frequency Power Inverters

^zUPS

Symbol

Test Conditions

Characteristic Values

^zMotor Drives

(T_J= 25°C, unless otherwise specified)

Min. Typ.

Max.

^zSMPS

^zPFC Circuits

^zBattery Chargers

^zWelding Machines

^zLamp Ballasts

BV_CES

V_GE(th)

I_C= 250μA, V_GE= 0V

I_C= 250μA, V_CE= V_GE

300

3.0

5.0

I_CES

V_CE= V_CES

V_GE= 0V

10 μA

500 μA

T_J= 125°C

I_GES

V_CE= 0V, V_GE= ±20V

±100 nA

V_CE(sat)

I_C

= 120A, V_GE= 15V, Note 1

T_J= 125°C

1.42

1.47

1.70

DS99797A(07/08)

12 3 4 5 6

中文翻译

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与IXGH120N30B3相关器件

型号	品牌	获取价格	描述	数据表
IXGH120N30C3	IXYS	获取价格	GenX3 300V IGBT
IXGH120N30C3	LITTELFUSE	获取价格	GenX3? IGBT采用我们完善的HDMOS IGBT工艺进行PT（打穿）生产。? 30
IXGH12N100	IXYS	获取价格	Low VCE(sat) IGBT with Diode High Speed IGBT with Diode
IXGH12N100	LITTELFUSE	获取价格	IXYS系列穿通型（PT）IGBT具有高增益、极快速切换和低传导损耗等优点。这些产品针对
IXGH12N100A	ETC	获取价格	TRANSISTOR \| IGBT \| N-CHAN \| 1KV V(BR)CES \| 24A I(C) \| TO-247AD
IXGH12N100AS	ETC	获取价格	TRANSISTOR \| IGBT \| N-CHAN \| 1KV V(BR)CES \| 24A I(C) \| TO-247SMD
IXGH12N100AU1	IXYS	获取价格	Low VCE(sat) IGBT with Diode High Speed IGBT with Diode
IXGH12N100AU1S	ETC	获取价格	TRANSISTOR \| IGBT \| N-CHAN \| 1KV V(BR)CES \| 24A I(C) \| TO-247SMD
IXGH12N100S	ETC	获取价格	TRANSISTOR \| IGBT \| N-CHAN \| 1KV V(BR)CES \| 24A I(C) \| TO-247SMD
IXGH12N100U1	IXYS	获取价格	Low VCE(sat) IGBT with Diode High Speed IGBT with Diode